• International Journal of Air-Conditioning and Refrigeration
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• v.17 no.1
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• pp.1-6
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• 2009

The optimum design of back pressure chamber is one of the most important factors in designing scroll compressors because it has a great influence on the efficiency and other design parameters. The design process can be divided into 2 parts. One is obtaining the optimum pressure of the chamber and keeping it in constant value. The other is finding out the minimum inflow rate of medium with which back pressure chamber is filled. In this study we are focused on the first step. At first we added a simple structure that can change back pressure without reassembling compressor. It makes possible to obtaining optimum back pressure. Then we designed an equipment that the back pressure control valve assembly could be independently tested with. Spring was redesigned to decrease stiffness variation. Also sealing mechanism of back pressure control valve was improved to more effective way. As a result, it was verified that in a real mode test back pressure variation could be retained in 2.3% with discharge pressure and operating frequency varied. In addition the integrated structure of back pressure control valve is expected to contribute to effective manufacturing process.

• Proceedings of the SAREK Conference
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• 2007.11a
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• pp.410-415
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• 2007

The optimization of back pressure chamber is one of the most important factors in designing scroll compressors, because it has a great influence on the efficiencies and other design parameters. The design process can be divided into 2 parts. One is obtaining the optimum pressure of the chamber and keeping it in constant value. And the other is finding out the minimum inflow rate of medium with which back pressure chamber is filled. In this study we are focused on the first step. At first we added a simple structure that could change back pressure without reassembling compressor. It makes the optimum back pressure be obtained. And then we devised an equipment that the back pressure control valve assembly could be independently tested with. A spring was redesigned to decrease stiffness variation. And sealing mechanism of back pressure control valve was improved to more effective way. As a result it was verified in a real mode test that back pressure variation could be stabilized within 2.3% when discharge pressure and operating frequency varied. And the integrated structure of back pressure control valve is expected to contribute to an effective manufacturing process.

• Animal cells and systems
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• v.4 no.1
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• pp.87-90
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• 2000

Essential hypertension is a multifactorial disease, and has been shown to be associated with insulin resistance. The relationship between the genetic variation of the insulin receptor (INSR) gene and essential hypertension In Korean population was investigated by the Nsi 1 restriction fragment length polymorphism (RFLP) pattern of this gene. The observed genotype frequencies of INSR gene were not deviated from those expected for the Hardy-Weinberg equilibrium (HWE), but a significant association was observed between essential hypertension and N1 allele of Nsi 1 RFLP at the INSR gene ($X^2$-test; P<0.05). Moreover, the frequency of N1 allele was significantly different between normotensives and essential hypertensives in subgroups that were not obese ($X^2$-test; P<0.05). These data suggest that the Nsil RFLP of INSR gene may be a useful genetic marker for essential hypertension in Korean population.

• Tuberculosis and Respiratory Diseases
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• v.45 no.5
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• pp.1067-1072
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• 1998

Primary malignant tumor of trachea is rare and often extensive at presentation, and frequently causes life-threatening airway obstruction. Primary extranodal lymphomas comprise about 10% of all malignant lymphomas. However, the primary malignant lymphoma of trachea is extremely rare. We presented here a case of 62-year-old male, was diagnosed as a primary extranodal lymphoma arising in the trachea with review of literature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.424-425
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• 2007

Anti-Reflection and High-reflection coating on the facet of semiconductor laser diode. To prevent internal feedback from both facets for realizing super luminescent diode and reducing the reflection-induced intensity noise of laser diode. Anti-Reflection coating Film was designed by Macleod Simulator. Coating Materials were decided $Ti_3O_5$ and $SiO_2$. Thickness of Coating layer $Ti_3O_5/SiO_2$ were 105[nm], 165[nm]. In the study Anti-Reflection coating Film was design for Laser diode and deposited by Ion-Assisted Deposition system. Then manufactured thin film measured electrical properties(L-I-V, Se, Resistor) and Optical properties(wavelength FFP). Slop-efficiency and FFP characteristic is 0.302[W/A], $22.3^{\circ}$(Horizontal), $24.4^{\circ}$(Vertical).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.263-266
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• 2004

The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants $a_0\;and\;c_0\;were\;a_0=5.51\;A,\;c_0=10.98\;A$. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current(pc/dc), maximum allowable rower dissipation(MAPD), spectral response and response time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.381-384
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• 2004

The stochiometric nix of evaporating materials for the $AgInS_2$ single crystal thin films were prepared from horizontal furnace. The polycrystal structure obtaind from the power x-ray diffraction was chalcopyrite. The lattice costants $a_0\;and\;c_0$ were $a_0=5.86(5.82)\;A,\;c_0=11.355(11.17)\;A$. To obtains the single crystal thin films, $AgInS_2$ mixed crystal were deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.134-135
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• 2006

$AgInS_2$ single crystal thin filmsl was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $680^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $6{\mu}m$. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInS_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0098 eV and 0.15 eV at 10 K, respectively. In order to explore the applicability as a photoconductive cell, we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The result indicated that the samples annealed in S vapour the photoconductive characteristics are best. Therefore we obtained the sensitivity of 0.98, the value of pc/dc of $1.02{\times}10^6$, the MAPD of 312 mW, and the rise and decay time of 10.4ms and 10.8ms respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.991-994
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• 2007

In this paper, we have designed the anti-reflection(AR) coating for $1400{\sim}1600$ nm wavelength range on the ferrule facet of optical connector. The low-temperature ion-assisted deposition was applied to AR coating on the ferrule facet in order to avoid damage of optical connector. We have measured the refractive index of coating film($Ta_2O_5\;and\;SiO_2$) using the ellipsometer and optimized the film thickness using the SEM and thickness measurement equipment. UV-VIS-NIR spectrophotometer is used to measure transmissivity of the AR coated ferrule facet. The refractive index of $Ta_2O_5\;and\;SiO_2$ is $2.123{\sim}2.125$ and $1.44{\sim}1.442$, respectively, for $1400{\sim}1600$ nm wavelength range. The transmissivity of the AR coated ferule facet is more than 99.8 % for $1425{\sim}1575$ nm wavelength range and more than 99.5 % for $1400{\sim}1600$ nm wavelength range. The return loss of the AR coated ferrule facet is 30.1 dB.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2000.11a
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• pp.748-753
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• 2000

Nowadays, many studies and researches in data storage have been carried out and storage capacity is increased. But the limitation of storage capacity is happened for several problems. One of them is spot & pit size in optical and magnetic data storage and another is the resolution of actuators. The problems in spot & pit size is covered by new data storage methods- for example, NFR{Near-Field Recoding) system. But the resolution limit of an actuator doesn't follow up the development of spot & pit size. Because of them, we should improve a resolution of an actuator. Especially, in this paper an actuator is studied and designed for NFR(in using SIL(Solid Immersion Lens) system. It is a dual stage actuator, which consists of a Fine actuator and a Coarse actuator, and should desire 100nm accuracy. But, our actuator system only includes tracking mechanism execpt focusing mechanism which is controlled by slider mechanism used in HDD. Its actuating force generation method is VCM(Voice Coil Motor). The Fine actuator is composed of 4-leaf springs and a bobbin wrapped by coil. The Coarse actuator has Coils and 3-Roller bearings.