• Journal of the Mineralogical Society of Korea
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• v.17 no.4
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• pp.327-338
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• 2004

XRD studies on annealed Na-feldspar (Amelia albite) at $1100^{\circ}C$ showed rapid structural changes due to Si-Al disordering, which resulted in phase transformations from low albite to high albite by 4-days annealing test. TEM SAED analyses on the annealed samples revealed a trend of structural changes, but estimation of the structural state was difficult due to a large deviation of the SAED data. Optimum conditions of CBED analyses on albite was established by employing a cooling specimen holder, 120 kV of acceleration voltage, 37 Jim of condenser aperture size and 25 nm of spot size. A proper orientation showing distinct changes of HOLZ lines corresponding to the structure changes of albite turned out to be close to the [418] direction with $-1.2^{\circ}$ tilting, where the width of two HOLZ lines in low albite was opposite to those in high albite.

• Applied Microscopy
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• v.25 no.3
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• pp.99-107
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• 1995

The morphological changes of primary solid particles as a function of process time on hypereutectic Al-15.5wt%Si alloy during semi-solid state processing with a shear rate of $200s^{-1}$ are studied. In this alloy, it was observed that primary Si crystals are fragmented at the early stage of stirring and morphologies of primary Si crystals change from faceted to spherical during isothermal shearing for 60 minutes. To understand the role of Al dissolved in the primary Si crystal by shear stress at high temperature, lattice parameters of the primary Si crystals are determined as a variation of high order Laue zone(HOLZ) line positions measured from convergent beam electron diffraction(CBED) pattern. The lattice parameter of the primary Si crystal in the rheocast Al-15.5wt%Si alloy shows tensile strain of about 5 times greater than that of the gravity casting. Increase of the lattice parameter by rheocasting is due to the increased amount of Al dissolved in the primary Si crystal accelerated by shear stress at high temperature. The amounts of solute Al in the primary Si crystal are measured quantitatively by EPMA method to confirm the CBED analysis.