• Current Photovoltaic Research
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• v.12 no.2
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• pp.37-40
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• 2024

One of the current innovation trends in the solar industry is the increase in the size of silicon wafers. As the wafer size increases, the series resistance of the module rises, highlighting the need for research on methods for cutting and bonding solar cells. Among these, the Infrared (IR) laser scribing technique has been extensively researched. However, there is still insufficient optimization research regarding the thermal damage caused by lasers on the Transparent Conductive Oxide (TCO) layer of Heterojunction (HJT) solar cells. Therefore, in this study, we systematically varied conditions such as IR laser scribing speed, frequency, power, and the number of scribes to investigate their impact on the performance of cut cells under each condition. Additionally, we conducted a comparative analysis of thermal damage effects on the TCO layer based on varying scribing depths.

• International Area Studies Review
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• v.20 no.2
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• pp.85-111
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• 2016

Global semiconductor companies is investing enormous capital worldwide. And direct investment in China is increasing greatly these days, Especially, global semiconductor companies are setting up a factory in China due to expanding market rather than utilizing low labor cost. Therefore, this study is trying to analyze the background and process of direct investment from global Korean and Taiwanese semiconductor companies in China. Firstly, In 1996, Samsung semiconductor established a back end process factory in Suzhou. And in 2014, Samsung semiconductor set up a front and back end factory in Xian. Secondly, In 2006, SK Hynix built a front and back end factory in Wuxi. and SK Hynix set up a back end factory named Hitech semiconductor with Chinese company in 2009. Later in 2015, SK Hynix established a back end factory in Chongqing. Thirdly, In 2004, TSMC started to operate a factory in Shanghai, and in 2018, TSMC is going to establish a factory in Nanjing. Lastly, UMC bought a stock to produce product in Chinese local company named HJT, and at the end of 2016, UMC is going to finish building a factory in Xiamen. As a result, it was proved that most companies hoped to expand the chinese market by setting up a factory in china. In addition, Samsung expected to avoid a risk by setting up a factory in china, and SK Hynix wanted to avoid a countervailing duty by setting up a factory in china. Based on the result of this study, this study indicates some implications for other semiconductor companies which are very helpful for their future foreign direct investment.

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.4
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• pp.48-53
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• 2001

A three-stage low noise amplifier(LNA) for the Base-station of the IMT-2000 is designed and implemented. In the first stage, a GaAs HJt-FET which has good noise characteristics is made use of. Monolithic microwave integrated circuits(MMICS) are used in the second and the third stage to achieve both the high gain and high output power. Although the balanced amplifier is used to reduce the input VSWR, it is done only in the first stage because we have to minimize the noise figure attributed to the phase difference of the balanced amplifier. It is shown that the implemented LNA has the gai over 39.74dB, the gain flatness less than ±0.4dB, the noise figure below 0.97dB, input and output VSWRs less than 1.2, and OIP₃(output third order intercept point) of 38.17dBm in the operating frequency range.