• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Korean Chemical Engineering Research
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• v.60 no.2
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• pp.313-319
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• 2022

AlGaN/GaN based HfO₂ MOSHEMT (metal oxide semiconductor high electron transistor) with different gate recess depth was simulate to demonstrate a successful normally-off operation of the transistor. Three types of the HEMT structures including a conventional HEMT, a gate-recessed HEMT with 3 nm thick AlGaN layer, and MIS-HEMT without AlGaN layer in the gate region. The conventional HEMT showed a normally-on characteristics with a drain current of 0.35 A at V_G = 0 V and V_DS = 15 V. The recessed HEMT with 3 nm AlGaN layer exhibited a decreased drain current of 0.15 A under the same bias condition due to the decrease of electron concentration in 2DEG (2-dimensional electron gas) channel. For the last HEMT structure, distinctive normally- off behavior of the transistor was observed, and the turn-on voltage was shifted to 0 V.

• Proceedings of the Korean Biophysical Society Conference
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• 2003.06a
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• pp.73-73
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• 2003

We report here the results on N-acetyl-N'-methylamide of alanine (Ac-Ala-NHMe) calculated using the ab initio molecular orbital method with the self-consistent reaction field (SCRF) theory at the HF level with the 6-3l+G(d) basis set to investigate the conformational preference of alanine depending on the backbone torsion angles $\square$ and$\square$ in the gas phase, chloroform, and water. There are seven local minima (LM) in the gas phase and two additional LM are found in chloroform and water. These two additional LM A (an $\square$-helical structure) and F (a polyproline structure) are stabilized only in solutions. In the gas phase, the lowest LM is the conformation C with a C$\sub$7/ intramolecular hydrogen bond and the relative conformational energies range from 0.3 to 6.0 ㎉/mol. In chloroform, the lowest LM is the conformation E (an extended structure) and the relative conformational energies range from 0.7 to 4.9 ㎉/mol. In particular, we identified 14 possible transition states connecting between seven LM in the gas phase. The search for transition states probable in chloroform and water is now in progress.

• Analytical Science and Technology
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• v.8 no.4
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• pp.477-480
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• 1995

Isotopic-spectral method [I] was applicated for determination of carbon in silicate materials (pure silica, guartz glasses, geological probs etc.). Isotopic heterogeneous balancing of carbon in gaseous phase and solid samples was carried out at the temperature of $1500-1900^{\circ}K$. Spectroscopic measuring of isotope concentration in a balanced gas was made using the electron-vibrational band heads of CO molecules excited in HF discharge. Limits of detection of carbon concentrations appear to be $n^*10^{-6}$.

• Proceedings of the PSK Conference
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• 2003.10b
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• pp.158.1-158.1
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• 2003

We report here the results on N-acetyl-N"-methylamide of oxazolidine (Ac-Oxa-NHMe) calculated using the ab initio molecular orbital method with the self-consistent reaction field (SCRF) theory at the HF level of theory with the 6-31 +G(d) basis set. The displacement of the $\gamma$-$CH_2$ group in proline ring by oxygen atom has affected the structure of proline, cis-trans equilibrium, and rotational barrier. The up-puckered structure is found to be prevalent for the trans conformers of the Oxa amide. (omitted)

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.182.2-182.2
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• 2016

Hollow cathode discharge(중공 음극)는 음극 표면에서 발생되는 2차 전자를 이용하여 높은 밀도의 플라즈마를 만들 수 있는 장점이 있다. 전원으로 microwave, RF, DC, pulsed dc등을 사용할 수 있으며 박막의 증착, 식각 등에 응용 가능하다. 물리적 현상으로는 중공 음극 재료 표면 물질의 가열 및 이온 스퍼터링, 2차 전자의 가열, 자기장 인가 구조의 경우 전자 거동이 있다. PIC(particle-in-cell)방식의 모델링과 fluid model을 이용한 방법이 있는데 본 연구에서는 상용 fluid model software인 ESI사의 CFD-ACE+를 사용하여 모델링 하였다. 구동 주파수는 13.56 MHz의 상용 고주파 전원과 보다 낮은 1 MHz, 100 kHz의 수치 모델을 이용하여 HF, MF, LF 영역에서의 동작 특성을 해석하였다. 1차적으로는 가스 유동의 특성을 2D, 3D로 조사하였고 플라즈마 거동은 2차원을 주로 진행하였으며 계산 시간이 오래 거리는 3차원 모델을 하나 만들어 그 특성을 조사하였다.

• Journal of Environmental Science International
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• v.22 no.8
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• pp.1019-1027
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• 2013

Sulfur hexa-fluoride has been used as a etching gas in semiconductor industry. From the globally environmental issues, it is urgent to control the emissions of this significant greenhouse gas. The main objective of this experimental investigation was to find the effective catalyst for $SF_6$ decomposition. The precursor catalyst of hexa-aluminate was prepared to investigate the catalytic activity and stability. The precursor catalyst of hexa-aluminate was modified with Ni to enhance the catalytic activities and stability. The catalytic activity for $SF_6$ decomposition increased by the addition of Ni and maximized at 6wt% addition of Ni. The addition of 6wt% Ni in precursor catalyst of hexa-aluminate improved the resistant to the HF and reduced the crystallization and phase transition of catalyst.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.113-123
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• 1990

Tungsten film was deposited on the single crystal silicon wafer in a low pressure chemical vapor deposition reactor from silane and tungsten hexafluoride in the temperature range of $250-400^{\circ}C$ Deposition rate was found to be determined by the mass transfer rate of reactants from the gas phase to the safter surface. It was found out that tungsten films deposited contained about 3 atomic $\%$ of silicon and that the crystallinity and the grain size increased as the deposition temperature was increased. The resistivity of the film was measured to be in the range of $7~25{\mu}{\Omega}-cm$ and decreased with increasing deposition temperature. The adhesion of the tungsten film on a silicon surface was measured by the tape peel off test and it was improved with increasing deposition temperature. From the analysis of the gas composition, the reaction pathway to form $SiF_{4}$ and $H_{2}$ was found to be more favorable than HF formation.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.

• Bulletin of the Korean Chemical Society
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• v.31 no.6
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• pp.1601-1608
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• 2010

A scandium(III) porphyrin-based fluoride-selective potentiometric sensor and its application in the analysis of hydrofluoric acid is described. Scandium(III) octaethylporphyrin, an ionophore recently developed for the optical fluoride sensor, was employed as a host molecule for the selective binding with fluoride in the plasticized PVC membrane. Nernstian response for $F^-$ between $10^{-4.6}$ to $10^{-1}$ M was observed at a glycine-phosphate buffer (pH 3.0). The selectivity pattern was observed as $F^-$, salicylate $\gg$ $SCN^-$ > $Cl^-$, $Br^-$, $NO_3{^-}$, $ClO_4{^-}$, which is consistent with the binding constant data measured in the plasticized PVC membrane based on a sandwich membrane method. This highly selective and reversible fluoride-sensitive electrode was employed for the analysis of hydrofluoric acid (HF). A disposable differential-type HF sensor was fabricated on the screen-printed electrode and demonstrated its ability to detect the neutral HF in the acidic solution.