• Journal of the Korean Society of Safety
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• v.34 no.6
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• pp.13-21
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• 2019

Leakage accidents in businesses dealing with hazardous chemicals can have a great impact on the workers inside the workplace, as well as residents outside the workplace. In fact, there were cases where hazardous chemicals leaked from many businesses. As a result, the Chemicals Control Act(CCA) was enacted in 2015, the Ministry of Environment introduced an Off-site Risk Assessment(ORA). The purpose of the ORA is to secure safety from the installation of the design of the workplace facilities so that chemical accidents of hazardous chemical handling facilities do not cause human or physical damage outside the workplace. In general, the ORA qualitatively determines where a protected facility is within the scope of the accident scenario. However, elderly who belong to the sensitive group is more sensitive than the general group under the same chemical accident effect, and the extent of the damage is serious. According to data from the Korea National Statistic Office, the number of elderly people is expected to increase steadily. Therefore, a quantitative risk analysis considering the elderly is necessary as a result of a chemical accident. In this study, accident scenarios for 14 locations were set up to perform emergency evacuation due to toxic gas leakage of Cl₂(Chlorine) and HF(Hydrogen Fluoride), and the effects of exposure were analyzed based on the evacuation velocity difference of age 20s and 60s. The ALOHA(Areal Locations of Hazardous Atmospheres) program was used to calculate the concentration for assessing the effects. The time of exposure to toxic gas was calculated based on the time it took for the evacuation to run from the start point to the desired point and a methodology was devised that could be applied to the risk calculation. As a result of the study, the relative risk of the elderly, the sensitive group, needs to be determined.

• Applied Chemistry for Engineering
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• v.26 no.2
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• pp.154-158
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• 2015

In this study, the catalytic activity of ${\gamma}-Al_2O_3$ was investigated for the decomposition of $NF_3$. Reactions for $NF_3$ decomposition were carried out in the range of reaction temperature of $330{\sim}730^{\circ}C$ and GHSV of $3,000{\sim}15,000mL/g-cat{\cdot}h$ in a fixed-bed catalytic reactor system. Thermal decomposition of $NF_3$ was also performed in order to compare with the catalytic decomposition of $NF_3$. The conversion of $NF_3$ by the catalytic decomposition at $400^{\circ}C$ was four times higher than that of the thermal decomposition. It was confirmed that the reaction behavior of $NF_3$ over ${\gamma}-Al_2O_3$ exhibited two reaction pathways in the presence of steam. Fluorine in $NF_3$ over ${\gamma}-Al_2O_3$ was chemically absorbed to $AlF_3$ by the gas-solid reaction in the absence of steam. The catalytic decomposition of $NF_3$ occurred by hydrolysis with steam. It was also confirmed by FT-IR analysis that $NF_3$ was completely decomposed to NOx and HF above $500^{\circ}C$.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.459-465
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• 1993

By making the inter-metal PECVD $SiO_2$ as a Si rich oxide under the SOG, the hydrogen and water related diffusants could be captured a t SI dangling bonds. This gettering process was known to prevent the device characteristics degradations related to the H, $H_20$. The basic characteristics of Si rich oxide have been studied according to changing high/low frequency power and $SiH_4/N_2O$ gas flow ratio in PECVD. As increase in low frequency power, deposition rate decreased but K.I. and compressive stress increased. Decrease of the water peaks of FTIR spectra at the wave number range of 3300~3800$\textrm{cm}^{-1}$' also indicated that intensty the films were densified. As increase in SiH, gas flow rate, deposition rate, R.I. and etch rate increased while compressive stress decreased. F'TIK spectra showed that peak intensity corresponding to Si-0-Si stretching vibration decreased and shifted to the lower wave numbers. But AES showed that Si dangl~ng bonds were increased as a result of lower Si:O(l: 1.23) ratlo inthe Si rich oxide as compared to Si : O(1 : 1.98) ratio of usual oxide.

• Macromolecular Research
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• v.11 no.1
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• pp.9-13
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• 2003

Poly (vinylidene fluoride) (PVDF) samples were implanted by using high energy (MeV)F$^{2+}$ and Cl$^{2+}$ ions. We observed that AC dielectric constant of the ion-implanted PVDF samples decreased from 10.5 to 2.5 at 1 kHz as the ion dosage increased from 10$^{11}$ to 3 $\times$ 10$^{14}$ ions/$\textrm{cm}^2$. From differential scanning calorimetry experiments, we observed that PVDF samples become more disordered state through the ion implantation. The decrease of the number of bonding of C-H and C-F and the increase of unsaturated bonding were observed from X-ray photoelectron spectroscopy experiments. The emission of HF and H$_2$ molecules during the ion implantation was detected by residual gas analyzer spectrum. Based upon the results, we analyzed that the low AC dielectric constant of the MeV ion-implanted PVDF samples originated from the reduction of polarization due to the structural change of the CF$_2$ molecules in the MeV ion-implanted PVDF samples.les.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.64-64
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• 2000

Since its discovery in 1991, the carbon nanotube has attracted much attention all over the world; and several method have been developed to synthesize carbon nanotubes. According to theoretical calculations, carbon nanotubes have many unique properties, such as high mechanical strength, capillary properties, and remarkable electronical conductivity, all of which suggest a wide range of potential applications in the future. Here we report the synthesis in the catalytic decomposition of acetylene at ~65 $0^{\circ}C$ over Ni deposited on SiO2, For the catalyst preparation, Ni was deposited to the thickness of 100-300A using effusion cell. Different approaches using porous materials and HF or NH3 treated samples have been tried for synthesis of carbon nanotubes. It is decisive step for synthesis of carbon nanotubes to form a round Ni particles. We show that the formation of round Ni particles by heat treatment without any pre-treatment such as chemical etching and observe the similar size of Ni particles and carbon nanotubes. Carbon nanotubes were synthesized by chemial vapour deposition ushin C2H2 gas for source material on Ni coated Si substrate. Ni film gaving 20~90nm thickness was changed into Ni particles with 30~90nm diameter. Heat treatment of Ni fim is a crucial role for the growth of carbon nanotube, High-resolution transmission electron microscopy images show that they are multi-walled nanotube. Raman spectrum shows its peak at 1349cm-1(D band) is much weaker than that at 1573cm-1(G band). We believe that carbon nanotubes contains much less defects. Long carbon nanotubes with length more than several $\mu$m and the carbon particles with round shape were obtained by CVD at ~$650^{\circ}C$ on the Ni droplets. SEM micrograph nanotubes was identified by SEM. Finally, we performed TEM anaylsis on the caron nanotubes to determine whether or not these film structures are truly caron nanotubes, as opposed to carbon fiber-like structures.

• Asian-Australasian Journal of Animal Sciences
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• v.31 no.10
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• pp.1660-1669
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• 2018

Objective: This study was conducted to evaluate the effect of probiotics (Bacillus subtilis and Enterococcus faecium) and xylo-oligosaccharide (XOS) supplementation on growth performance, nutrient digestibility, serum profiles, intestinal health, fecal microbiota and noxious gas emission in weanling pigs. Methods: A total of 240 weanling pigs ([Yorkshire${\times}$Landrace]${\times}$Duroc) with an average body weight (BW) of $6.3{\pm}0.15kg$ were used in this 28-day trial. Pigs were randomly allocated in 1 of the following 4 dietary treatments in a $2{\times}2$ factorial arrangement with 2 levels of probiotics (0 and 500 mg/kg probiotics) and XOS (0 and 200 mg/kg XOS) based on the BW and sex. Results: Administration of probiotics or XOS improved average daily gain (p<0.05) during 0 to 14 d and the overall period, while pigs that were treated with XOS had a greater average daily gain and feed efficiency (p<0.05) compared with unsupplemented treatments throughout 15 to 28 d and the whole experiment. Either probiotics or XOS treatments increased the apparent total tract digestibility of nutrients (p<0.05) during 0 to 14 d. No effects on serum profiles were observed among treatments. The XOS increased villus height: crypt depth ratio in jejunum (p<0.05). The supplementation of probiotics (500 mg/kg) or XOS (200 mg/kg) alone improved the apparent total tract digestibility of dry matter, nitrogen and gross energy on d 14, the activity of trypsin and decreased fecal NH3 concentration (p<0.05). Administration of XOS decreased fecal Escherichia coli counts (p<0.05), while increased lactobacilli (p<0.05) on d 14. There was no interaction between dietary supplementation of probiotics and XOS. Conclusion: Inclusion of XOS at 200 mg/kg or probiotics (Bacillus subtilis and Enterococcus faecium) at 500 mg/kg in diets containing no antibiotics significantly improved the growth performance of weanling pigs. Once XOS is supplemented, further providing of probiotics is not needed since it exerts little additional effects.

• Korean Journal of Materials Research
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• v.23 no.7
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• pp.379-384
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• 2013

In order to produce size-controllable Ag nanoparticles and a nanomesh-patterned Si substrate, we introduce a rapid thermal annealing(RTA) method and a metal assisted chemical etching(MCE) process. Ag nanoparticles were self-organized from a thin Ag film on a Si substrate through the RTA process. The mean diameter of the nanoparticles was modulated by changing the thickness of the Ag film. Furthermore, we controlled the surface energy of the Si substrate by changing the Ar or $H_2$ ambient gas during the RTA process, and the modified surface energy was evaluated through water contact angle test. A smaller mean diameter of Ag nanoparticles was obtained under $H_2$ gas at RTA, compared to that under Ar, from the same thickness of Ag thin film. This result was observed by SEM and summarized by statistical analysis. The mechanism of this result was determined by the surface energy change caused by the chemical reaction between the Si substrate and $H_2$. The change of the surface energy affected on uniformity in the MCE process using Ag nanoparticles as catalyst. The nanoparticles formed under ambient Ar, having high surface energy, randomly moved in the lateral direction on the substrate even though the etching solution consisting of 10 % HF and 0.12 % $H_2O_2$ was cooled down to $-20^{\circ}C$ to minimize thermal energy, which could act as the driving force of movement. On the other hand, the nanoparticles thermally treated under ambient $H_2$ had low surface energy as the surface of the Si substrate reacted with $H_2$. That's why the Ag nanoparticles could keep their pattern and vertically etch the Si substrate during MCE.

• 한국신재생에너지학회:학술대회논문집
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• 2006.11a
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• pp.348-351
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• 2006

Bipolar plate, which forms about 50% of the stack cost, is an important core part with polymer electrolyte membrane in PEMFC. Bipolar plates have been commonly fabricated from graphite meterial having high electrical conductivity and corrosion resistance. Lately, many researchers have concentrated their efforts on the development of metallic bipolar plate and stainless steel has been considered as a potential material for metallic bipolar plate because of its high strength, chemical stability, low gas permeability and applicability to mass production. However, it has been reported that its inadequate corrosion behavior under PEMFC environment lead to a deterioration of membrane by dissolved metal ions and an increase in contact resistance by the growth of passive film therefore, its corrosion resistance as well as contact resistance must be improved for bipolar plate application. In this work, several types of coating were applied to 316L and their electrical conductivity and corrosion resistance were evaluated In the simulated PEMFC environment. Application of coating gave rise to low interfacial contact resistances below $19m{\Omega}cm^2$ under the compress force of $150N/cm^2$. It also made the corrosion potential to shift in the posit ive direct ion by 0.3V or above and decreased the corrosion current from ca. $9{\mu}A/cm^2$ to ca. $0.5{\mu}A/cm^2$ in the mixed solution of $0.1N\;N_2SO_4$ and 2ppm HF A coat ing layer under potentiostatic control of 0.6V and $0.75V_{SCE}$ for 500 hours or longer showed some instabilities, however, no significant change in coat Ing layer were observed from Impedance data. In addition, the corrosion current maintained less than $1{\mu}A/cm^2$ for most of time for potentiostatic tests. It indicates that high electrical conductivity and corrosion resistance can be obtained by application of coatings in the present work.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.