• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.170-175
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• 2013

Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

• Laser Solutions
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• v.14 no.1
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• pp.25-29
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• 2011

Micromachining of photosensitive glass by UV exposure, heat treatment, and etching processes is reported. Like photoresist, the photosensitive glass is also classified into positive and negative types by development characteristics. For the positive type, the exposed area is crystallized and etched away during the etching process in HF solution, whereas the unexposed area is crystallized and etched away for the negative type. The crystallized area of the photosensitive glass has an etch rate approximately 30~100 times faster than that of the amorphous area so that it becomes possible to fabricate microstructures in the glass. Based on the unique properties of glass such as high optical transparency, electrical insulation, and chemical/thermal stability, the glass micromachining technique introduced in this work could be widely applied to various devices in the fields of electronics, bio engineering, nanoelectonics and so on.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.813-818
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• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2003.10a
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• pp.185-189
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• 2003

The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.688-691
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• 1999

Light was of electric lamp was reflected by bulb reflector. In order to improve the efficiency of the electric lamp. it is inevitable that lamp, it is inevitable that improve the reflectance of bulb reflector. Important factors that affect the reflectance of bulb reflector is working pressure, distance between evaporation source to substrate, the situation of surface of glass. etch rate of glass, etc. In this paper. confirmed the effect of etching, working pressure etc. , and its effect for the reflectance of bulb reflector. Especially, concentration of HF in the etching solution and etching time is to be importnace for characteristic of bulb reflector.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.268-270
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• 2004

This paper reports a novel masking method with various mask materials for wet etching of glass. Various mask materials such as Cr/Au, Ti/Au, Polyimide and thick SU-8 photoresist were investigated for borosilicate glass (Borofloat33) etching in concentrated hydrofluoric acid (48% HF). Polyimide and thick SU-8 photoresist are not suitable as masking material due to its poor adhesion to glass surfaces. Titanium has good adhesion is suitable as the first layer to make multi-protective layers. The best protection was obtained with a combination of Ti/Au, polyimide and Ti/Au as masking material with etch depth of $350{\mu}m$ achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.353-353
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• 2007

탄소나노튜브(CNT)의 tip 부분에 존재하는 금속 촉매 입자들은 불순물로써 나노전자소자에 응용하는데 좋지 않은 영향을 미칠 수 있다. 또한, 바이오센서에서 target 바이오 물질과 반응하는 물질을 CNT에 고정시키기 위해서는 CNT-tip을 개방시키는 것이 중요하다. 본 연구에서는 성장된 CNT의 tip부분에 존재하는 금속 촉매 입자의 제거와 CNT-tip을 개방하기 위해 $HNO_3$의 농도 (20, 40, 60)와 etching 시간 (5, 10, 15, 20, 25 min)에 따라 최적의 조건을 찾는 실험을 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.270-270
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• 2010

결정질 실리콘 태양전지는 표면반사에 의한 광 에너지 손실을 최소화 시키고자 식각을 통한 표면 조직화(texturing)가 이루어진다. 단결정 실리콘 웨이퍼의 경우 알칼리 용액(alkali solution)을 사용하여 이방성 식각(anisotropic etching)을 함으로써 표면에 피라미드를 형성하고 광 포획(light trapping) 효과에 의해 반사율을 줄이게 된다. 그러나 피라미드 형성을 통한 반사율 감소에는 한계를 가지고 있다. Metal assisted etching을 기반으로 한 새로운 형태의 텍스쳐링인 nano texturing은 피라미드가 이루어진 표면에 수많은 nm사이즈의 구조를 형성시킴으로써 표면에서의 반사율을 현저히 감소시킨다. 먼저 $AgNO_3$용액으로 웨이퍼 표면에 Ag입자를 코팅한 후, 그 웨이퍼를 다시 $HF/H_2O_2$ 용액으로 일정시간 동안 식각을 거치게 된다. 그로 인해 표면에는 수 nm 사이즈의 구조물들이 피라미드 위에 생성되고, $AgNO_3$의 농도 및 식각 시간에 따라 그 구조물의 크기 및 굵기가 달라진다. 결과적으로 평균 10%이상의 반사율을 보이던 기존 텍스쳐링 웨이퍼에서 3%이하의 낮은 반사율을 얻을 수 있었다. 또한 이런 nano texturing을 n-emitter 형성 공정 등에 따른 영향과 carrer lifetime에 대하여 연구하였다.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.45-50
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• 2022

The etching with high selectivity of silicon dioxide over silicon nitride is essential in semiconductor fabrication, and gas phase etch (GPE) can increase the competitiveness of the selective dielectric etch. In this work, GPE of plasma enhanced chemical vapor deposited SiO₂ was performed, and the effects of process parameters, such as temperature, partial pressure ratio, and gas supply cycle, are investigated in terms of etch rate and within wafer uniformity. Employing multiple regression analysis, the importance of each parameter elements is analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.263-263
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• 2011

본 연구에서는 DBD (Dielectric Barrier Discharge)방식의 상압 플라즈마를 이용하여 FPD (flat panel display) 공정에 사용되는 a-Si, Si3N4의 식각 공정 특성을 평가하였다. 사용된 DBD 반응기는 기존의 blank planar plate 형태의 Power가 인가되는 anode 부분과 Dielectric Barrier 사이 공간을 액상의 도전체로 채워 넣은 형태의 전극이 사용 하였으며, 인가 Power는 40kHz AC 최대인가 전압 15 kVp를 사용 하였다. 방전 가스는 N2, 반응가스로는 CDA (Clean Dry Air)와 NF3, 액상의 Etchant를 사용 하였으며 모든 공정은 In-line type으로 시편을 처리 하였다. NF3의 경우 30 mm/sec 이송속도 1회 처리 기준 a-Si 1300${\AA}$, Si3N4 1900${\AA}$의 식각 두께를 보였으며 a-Si : Si3N4 선택비는 N2, CDA의 조절을 통하여 최대 1:2에서 4:1 정도까지 변화가 가능하였다. 균일도는 G2 (370 mm${\times}$470 mm)의 경우 5.8 %의 균일도를 보이고 있다. 이외에도 NF3 공정의 경우 실제 TFT-LCD 공정 중 n+ channel (n+ a-Si:H)식각 공정에 적용하여 5.5 inch LCD panel feasibility를 확인 할 수 있었다. 액상 Etchant (HF수용액, NH4HF2)는 버블러를 사용하여 기화 시켜 플라즈마 소스를 통해 1차적으로 활성화 시키고 기존 DBD 반응기에 공급해 주는 형태로 평가를 진행하였다. 식각 특성은 30mm/sec 이송속도에서 a-Si $25{\AA}$ 정도로 가스 형태의 Etchant에 비해 매우 낮은 수준이나 Etching rate 향상을 위한 factor 파악 및 개선을 위한 연구를 진행 하였다.