• Nuclear Engineering and Technology
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• 제16권2호
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• pp.58-63
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• 1984

특별히 제작한 영동장치를 써서 8면체 구조의 (Ruc $l_{6}$)$^{3-}$ 를 여과지 전기영동 분리하였다. 자지전해질 용액은 다음과 같다. 0.1M-HCl $O_4$, 0.05M-HCl+0.09M-KCI, 0.1M-HCl, 5$\times$$10^{-3}$M-NTA, 0.01M-HCl, 0.01M-HCl $O_4$, 0.01M-시트르산, 0.01M-K $H_2$P $O_4$+0.01M-$Na_2$HP $O_4$, 0.05M-붕사, 0.025M-$Na_2$C $O_3$+0.025M-NaHC $O_3$, 0.01M-$Na_3$P $O_4$, 0.01M-NaOH, 0.1M-NaOH. (Ruc $l_{6}$)$^{3-}$ 은 2-4피크로 나타내며 다음 화학종으로 확인된다. (RuCl($H_2O$)$_{5}$ )$^{2+}$, cis- 및 trans-(RuC $l_2$($H_2O$)$_4$)$^{1+}$ , (RuC $l_3$($H_2O$)$_3$)$^{0}$ , (RuC $l_4$($H_2O$)$_2$)$^{1-}$, (RuC $l_{5}$ ($H_2O$))$^{2-}$ , (RuC $l_{6}$)$^{3-}$ . 리텐숀 값은 0.025M-$Na_2$C $O_3$+0.025M-NaHC $O_3$ 전해질 용액에서 가장 높다.

• 생물환경조절학회지
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• 제7권3호
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• pp.246-252
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• 1998

1995년 경남지역에서 양액재배 원수로 사용되고 있는 77개 농가의 지하수 중의 무기성분 농도를 분석한 결과는 다음과 같다. 지하수의 깊이는 10~500m, pH는 6.2~8.4, EC는 0.11~1.44dS/m이었다. 1 liter당 무기성분의 평균함량은 N $H_{4}$-N 0.3mg, N $O_{3}$-N 3.1mg, P $O_{4}$$^{3-}$ 0.5mg, $Ca^{2＋}$ 25.4mg, $Mg^{2＋}$ 11.5mg, $Na^{＋}$ 21.7mg, C $l^{-}$ 42.6mg, S $O_{4}$$^{2-}$ 72.5mg였다. 지하수의 pH와 $Mg^{2＋}$(0.34$^{**}$ ), $Ca^{2＋}$(0.33$^{**}$ ) 및 EC(0.29$^{**}$ ) 사이에 유의적인 정(＋)의 상관을 보였다. 또한 EC와 $Na^{＋}$(0.68$^{**}$ ), $Ca^{2＋}$(0.67$^{**}$ ), S $O_{4}$$^{2-}$(0.62$^{**}$ ), $Mg^{2＋}$(0.60$^{**}$ ), N $H_{4}$-N(0.36$^{**}$ ), C $l^{-}$(0.53$^{**}$ ) 및 $K^{＋}$(0.26$^{**}$ ) 간에도 유의적인 정(＋)의 상관을 보였다..

• 전자공학회논문지D
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• 제35D권11호
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• pp.70-77
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• 1998

본 논문에서는 nickel/silicon carbide(Ni/SiC) 접합에 의한 Schottky 다이오드를 제작하고, 그 전기적 특성을 조사하였다. Ni/4H-SiC의 경우, 산화막 모서리 단락을 하였을 때 상온에서 973V의 역방향 항복전압이 측정되었으며 이는 모서리 단락되지 않은 Schottky 다이오드의 역방향 항복전압 430V에 비해 매우 높았다. Ni/6H-SiC Schottky 다이오드의 경우, 산화막으로 모서리 단락시켰을 때와 시키지 않았을 때의 역방향 항복전압은 각각, 920V와 160V 였다. 고온에서의 소자 특성도 매우 좋아서 Ni/4H-SiC Schottky 다이오드와 Ni/6H-SiC Schottky 다이오드 모두 300℃까지 전류 특성의 변화가 거의 없었으며 550℃에서도 양호한 정류 특성을 보였다. 상온에서의 Schottky barrier height와 이상인자(ideality factor) 및 specific on-resistance는 Ni/4H-SiC의 경우는 1.55eV, 1.3, 3.6×10/sup -2/Ω·㎠이었으며 Ni/6H-SiC Schottky 다이오드의 경우에 1.24eV, 1.2, 2.6×10/sup -2Ω·㎠/로 나타났다. 실험 결과 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드 모두 고온, 고전압 소자로서 우수한 특성을 나타냄이 입증되었다.

• 한국분말재료학회지
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• 제6권1호
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• pp.18-35
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• 1999

Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.131-131
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• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• 한국표면공학회지
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• 제43권3호
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• pp.127-131
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• 2010

Adhesion of DLC film is very significant property that exhibits wear resistance, chemical inertness and high hardness when being deposited to metal substrate. This study was considered that change adhesion of DLC film produced by Plasma Enhanced Chemical Vapor Deposition can be presented through inserting interlayer (Cr, Si-C:H). The thickness of interlayer was result of changing adhesion and residual stress. It was showed that the maximum 12 N of adhesion is on DLC film of Cr interlayer, and that a tendency is to be increased residual stress depend on the thickness. DLC film of Si-C:H interlayer represented 16 N of adhesion at $1{\mu}m$, whereas adhesion is decreased when the thickness is increased. For the interlayer at multi-layer, it was the best that adhesion of Cr/Si-C:H/DLC film was 33 N. Si-C:H interlayer at DLC film controled adhesion of the whole film. It was relaxed the internal stress of DLC film produced by inserting Cr, Si-C:H interlayer.

• Bulletin of the Korean Chemical Society
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• 제32권2호
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• pp.467-471
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• 2011

Spin exchange interactions of $(C_2N_2H_{10})[Fe(HPO_3)F_3]$ were examined by performing a spin dimer analysis based on extended Huckel tight binding method and a mapping analysis based on first principles density functional theory. Spin exchange interactions occur through the super-superexchange paths $J_1$ and $J_2$ in $(C_2N_2H_{10})[Fe(HPO_3)F_3]$. In the super-superexchange path $J_2$ magnetic orbital interactions between eg-block levels are much stronger than those from $t_{2g}$-block levels. Both electronic structure calculations show that the spin exchange interaction through the super-superexchange path $J_2$ is much stronger than that of $J_1$.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.146-147
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• 2002

III-V magnetic semiconductors initiated by GaMnAs growth at low temperatures via molecular beam epitaxy (MBE) has been a hot issue recently for their possible application to spntronics. GaMnN may be one of the candidates for room temperature operating ferromagnetic semiconductors as proposed by a theoretical calculation, However, since GaN was grown at very high temperatures above ∼750$^{\circ}C$ even with MBE, it is expected that the incorporation of Mn into GaN will be limited. (omitted)

• 약학회지
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• 제26권1호
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• pp.9-23
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• 1982

The structure of 1-butyl-3-sulfanyl urea, ($C_{11}H_{17}N_{3}O_{3}S$) carbutamide has been determined from 575 significant independent reflections collected on an automated four-circle diffractometer. The crystals are orthorhomic, space group, $P2_{1}2_{1}2_{1}$, Z=4, with unit cell dimensions a=9.257 (2), b=9.928 (2), c=15.287 (3)${\AA}$. The structure was solved by the direct methods and refined by least-squares procedure to a final R value of 0.062. Features of the structure include layers of molecules joined by N-H....O hydrogen bond distances ranging from 2.745 to 3.100${\AA}$ involved in a bifurcated hydrogen bond across two fold screw along a and b axes. The atoms forming the urea system are essentially planar.

• 한국세라믹학회지
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• 제38권12호
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• pp.1150-1154
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• 2001

플라즈마 화학기상증착(PECVD)법을 이용하여 실리카 광도파막의 코어로 이용되는 규소질산화막(SiON)을 Si 웨이퍼 위에 SiH$_4$,$N_2$O, $N_2$가스를 혼합하여 저온(32$0^{\circ}C$)에서 증착하였다. Prism coupler 측정을 통해 SiON 굴절률 1.4663~1.5496을 얻었으며, SiH$_4$/($N_2$O+$N_2$) 유량비와 rf power가 각각 0.33과 150W에서 8.67$mu extrm{m}$/h의 증착률을 나타내었다. 또한 SiH$_4$/($N_2$O+$N_2$) 유량비가 감소함에 따라 SiON막의 roughness는 41~6$\AA$까지 감소하였다.