• 한국생물공학회:학술대회논문집
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• 2001.11a
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• pp.363-366
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• 2001

This study was to investigate the effects of media components on the mycelial growth of Lentinus eclodes, including C-source. N-source, Inorganic salts, and c/N ratio. Glucose and yeast extract were selected as C-source and N-source, respectively. $KH_2PO_4,\;K_2HPO_4,\;MGSO_4,\;7H_2O$ as inorganic salts were added. When glucose concentration was 30g/L and yeast extract concentration was 20g/L, indicating that C/N ratio was 1.5, the cell mass was about 9g/L.

• Microbiology and Biotechnology Letters
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• v.14 no.5
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• pp.385-389
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• 1986

Both hydrogenase and nitrogenase were found to be involved in hydrogen evolution independently in Rhodopseudomonas sp. KCTC 1437. The hydrogen formation in this bacterium was independent on light illumination and presence of N $H_4^{+}$ After establishment of conditions to measure the amount of hydrogen evolved by each of the enzymes in vivo, the several factors affecting on the hydrogen evolution, e.g. presence of gases ( $C_2$ $H_2$, $H_2$, $O_2$ or $N_2$), C/N ratio, were investigated, Hydrogenase was less inhibited than nitrogenase under $O_2$ and was active independent on the presence of $N_2$ or $C_2$ $H_2$ which were the strong inhibitor of nitrogenase. Besides, the hydrogenase activity was increased after incubation with $H_2$. And it was verified that this bacterium consume hydrogen and photoreduce $CO_2$ by hydrogenase. From above results, it is concluded that hydrogenase in Rhodopseudomonas sp. KCTC 1437 can produce hydrogen under more favorable condition that nitrogenase.e.

• Korean Journal of Crystallography
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• v.13 no.3_4
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• pp.152-157
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• 2002

The molecular and crystal structure of Tricyclazole, C/sub9/H/sub7/N₃S, has been determined by single crystal x-ray diffraction study. Crystallographic data for title compound: Pca2₁, a=14.889(1) Å, b=7.444(1) Å, c=15.189(2) Å, V=1683.3(3) ų, Z= 8. The molecular structure model was solved by direct methods and refined by full-matrix least-squares. The final reliable factor, R, is 0.047 for 1533 independent reflections (F/sub o//sup 2/)). The asymmetry unit contains two molecules which are in plate conformation, parallel to each other and related by a pseudo four-fold screw on the b-direction.

• Bulletin of the Korean Chemical Society
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• v.21 no.3
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• pp.317-320
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• 2000

Layered $K_2NiF_4$type ($C_nH_{2n+1}NH_3)_2PbCl_4$(n=6, 8 and 10) system, or alkylammonium tetrachloroplumbate compound, has been synthesized from $PbCl_2$ and $C_nH_{2n+1}NH_3Cl$ solutions under argon ambient pressure for 12hrs at $90^{\circ}C$. The crystal structure of the compound has been analyzed using X-ray powder diffaction in the range of $5^{\circ}{\leq}2{\theta}{\leq}55^{\circ}$, and all samples assigned to an orthorhombic system. Local distances of the Pb-Cl bond have been determined by Pb $L_{III}$-edge extended X-ray absorption fine structure (EXAFS) spectroscopy. The vibration modes of alkylammonium chains and the absorpton peaks of an excition have been examined by FT-IR and UV-Vis. reflectance spectra, respectively. The phase transition temperatures of the compounds have been studied by using DSC. According to the thermal analysis, two phase transition temperatures have been observed in the compositons of n=8 and 10.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.18-24
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• 2004

Ni-Zn ferrite powder was synthesized from metal nitrates, Fe(N $O_3$)$_3$$.$9 $H_2$O, Ni(N $O_3$)$_2$$.$6 $H_2$O, Zn(N $O_3$)$_2$$.$6 $H_2$O by wet direct process to make high permeability material. The composition of the ferrite powder is (N $i_{0.284}$F $e_{0.053}$Z $n_{0.663}$)F $e_2$ $O_4$. Ni-Zn ferrite powder is compounded by precipitating metal nitrates with NaOH in vessel at 90$^{\circ}C$ synthetic temperature for 8 hours. Calcination temperature and sintering temperature were 700$^{\circ}C$ and 1150$^{\circ}C$-1250$^{\circ}C$ respectively for 2 hours. The same compound powder was extracted from metal oxide by wet ballmilling. We compared the properties of powder and the electromagnetic characteristics of the sintered cores obtained from the two different processes. Wet direct process produces smaller particle size with narrower distribution and higher purified ferrite which cores has high permeability and high magnetization.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.148-149
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• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.64-64
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• 2009

Atomic force microscopy (AFM) fabrication of oxide patterns is an attractive technique for nanoscale patterns and related device structures, SiC exhibits good performance in high-power, high-frequency, and high-temperature conditions that is comparable to the performance of Si. The AFM fabrication of oxide patterns on SiC is important for electronic applications. However, there has not been much reported investigations on oxidation of SiC using AFM. We achieved the local oxidation of 4H-SiC using the high loading force of ~100 nN, although the oxidation of SiC is generally difficult mainly due to the physical hardness and chemical inactivity. All the experiments were performed using atomic force microscopy (S.I.S. GmbH, Germany) with a Pt/Ir-coated Si tip at ~40% humidity and room temperature. The spring constant and resonance frequency of the tip were around ~3 N/m and ~70 kHz. We fabricated oxide patterns on n-type 4H-SiC ($\sim10^{19}/cm^3$) and n-type Si ($\sim1.9\times10^{16}/cm^3$). In summary, we demonstrated that the oxide patterns can be obtained over the electric field of ${\sim}\times10^7 V/cm$ and the high loading force using the tip as a cathode. The electric field transports the oxyanions (OH-) to the positively biased surface.

• Journal of Radiation Protection and Research
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• v.26 no.3
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• pp.287-290
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• 2001

The 9.17MeV gamma-rays from the $^{13}C(p,\;{\gamma})^{14}N,\;^{14}N({\gamma},\;{\gamma})^{14}N$ reactions were measured. The incident 9.17MeV gamma-ray was produced from the $^{13}C(p,\;{\gamma})^{14}N$ reaction at Ep=1.75MeV resonance. The 1.75MeV proton beam was accelerated using the 3MV SNU-AMS Tandetron and 1.7MV KIGAM Tandem accelerators. The enriched 13C target was $121{\mu}g/cm^2$ self-supporting foil, and we used liquid nitrogen as a resonant absorption target. We used a HP-Ge detector with 30% efficiency and less 2keV energy resolution. We developed new method to detect the scattered 9.17MeV gamma-ray from the nitrogen target by using the energy difference between the Doppler shifted gamma-ray from the $^{13}C(p,\;{\gamma})^{14}N$ reaction and the resonant absorbed and rescattered gamma-ray from the $^{14}N({\gamma},\;{\gamma})^{14}N$ reaction.

• Korean Journal of Veterinary Research
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• v.43 no.2
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• pp.271-281
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• 2003

Virulent and avirulent H5N1 viruses were inoculated intranasally to BALB/c and immunodeficient mice, and compared the pathogenesis by histology and immunohistochemistry. All of mice infected with virulent virus died by systemic infection at 6 to 7 days postinfection (PI). BALB/c mice infected with avirulent virus survived from the infection, whereas immunodeficient mice showed nervous symptoms in addition to respiratory disease and died at 13 days PI. Viral positive antigens was detected from multiple organs including central nervous system in immunodeficient mice infected with avirulent virus. These results suggest that avirulent H5N1 influenza virus can aquire the multiple tissue tropism under immunosuppresed condition and host immune system is a important factor to protect the development of disease.

• Corrosion Science and Technology
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• v.10 no.6
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• pp.212-217
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• 2011

In this study, corrosion characteristics of TiN and ZrN film on the abutment screw by arc-ion plating were investigated using a potentiodynamic anodic polarization test in deaerated 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The surface morphologies of the coating layers before and after corrosion test were investigated by a field-emission scanning electron microscope (FE-SEM) and a energy dispersive x-ray spectroscopy (EDS). The surfaces of the TiN and ZrN coated abutment screws showed the smooth surfaces without mechanical defects like scratches which can be formed during the manufacturing process, compared with those of the non-coated abutment screw. The corrosion and passive current densities of TiN and ZrN coated abutment screws were lower than those of the non-coated abutment screw.