• Nuclear Engineering and Technology
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• v.34 no.4
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• pp.323-330
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• 2002

Various types of compounds were tested with the aspects of decomposition and formation of residue in a $CO_2$ or 7H$_2$+93$N_2$ atmosphere. The evaporation temperature range of each compound was determined from thermogravimetric curve. Decomposition of dicarbon amide, stearic acid, acrowax and zinc stearate was studied by thermogravimetry in $CO_2$ or in 7H$_2$+93$N_2$ atmosphere. All compounds were decomposed in $CO_2$ atmosphere at lower than 40$0^{\circ}C$, but the residue, ZnO remained for zinc stearate. ZnO did not decompose in $CO_2$ atmosphere up to 130$0^{\circ}C$, but reduced into Zn metal and disappeared in the temperature range of $600^{\circ}C$ to 120$0^{\circ}C$ in 7H$_2$+93$N_2$ atmosphere. The effect of residue, which trapped in closed pores of sintered pellet, on the thermal stability was studied using the resintering test at 1$700^{\circ}C$ in 7H$_2$+93$N_2$ atmosphere. In the case of oxidative sintered pellet with admixing zinc stearate, the cavity formation accompanied with a density drop after resintering is due to the pressure of the Zn gases trapped in the isolated pores.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.109-109
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• 1998

최근 들어 MOCVD 법으로 성장시킨 GaN, InGaN, AIGaN를 이용한 광소자 ( (LED, LD)와 전자소자(FET, MODFET)에 대한 관심이 고조되면서, MOCVD 법 을 이용한 GaN 중심의 질화물 반도체 성장에 관심이 집중되고 있다. 금번 실험에 사용된 MOCVD 장비는 수직형 MOCVD 장비이다. 특히, wafer c carner를 1$\alpha$)() rpm이상의 고속으로 회전시킬 수 있는 장치로서 원료 가스의 반웅 기 내에서의 흐름을 균일하게 하여 uniformity가 높은 질화물 반도체를 성장시킬 수 있다 .. GaN 에피충은 c-plane 사파이어를 기판으로 하여 11 00 "C 이상의 고온 에서 수소를 이용하여 기판을 cleaning하고, 500 "C 부근에서 핵생성충올 성장시 킨 후 1050 "C에서 trimethylgallium(TMGa)과 NI-h를 이용하여 성장시켰다. n n -GaN를 성장시키기 위해서는 SiH4을 사용하였으며, InGaN의 경우는 t trimethylindium(TMIn)을 In원 료 가스로 하여 635 - 725 "C 범 위 에 서 성 장시 켰 다. 성 장된 undoped GaN, n-GaN, InGaN는 X -ray di잔raction(XRD), H떠l m measurement, Photoluminescence(PU동올 이용하여 결정성과 전기적 및 광학적 특성올 고찰하였다 .. 2ttm 두께로 성장된 undoped G값V박막의 경우 Hall 측정결과 6 6 X lOI6/e며 정도의 낮은 도핑 농도를 보였으며, V!lII ratio(2500 - 5000)증가에 따라 결정성이 향상됨을 GaN (102)면의 X -ray e -rocking분석올 통하여 확인하 였다 .. n-GaN의 경우 SiH4양올 3 - 13 sccm으로 증가시킴에 따라 n -type 도명농 도가 선형적으로 증가하였고, 1017/c며 범위 내로 도평이 된 경우 상온에서 300 e마 N Ns 이상의 high mobility를 얻올 수 있었다 .. PL 관측 결과로부터 Si 도핑으로 인 하여 GaN bandedge emission이 강화됨을 알 수 있었다 .. InGaN 박막의 경우 성 장온도를 낮춤에 따라서 m의 양을 증가시킬 수 있었다. 또한 유량비(TMIn I T TMGa)가 1에 가까운 경 우에서도 온도를 635 "C 정도로 낮훈 경우 410 nm정도에 서 PL bandedge peak올 얻을 수 있었으며, 이 때의 반치폭은 50 meV정도의 낮 은 값을 보였다. 반치폭은 50 meV정도의 낮 은 값을 보였다.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.96-104
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• 2009

In order to lower a reaction temperature with high conversions for simultaneous catalytic reduction of NO and $N_2O$ over Pd-Rh supported mixed metal oxide honeycomb catalysts, $H_2$ or CO was utilized as a reductant. When using the reductants, the effects of reaction conditions were examined in NO and $N_2O$ conversions, where reaction temperatures, concentrations of the reductants and oxygen and the concentration ratio of $N_2O$ to NO were varied. In using $H_2$ reductant, larger than 50% of NO and $N_2O$ conversions was observed at the temperatures below $200^{\circ}C$ in absence of $O_2$. In using CO reductant, NO and $N_2O$ conversions increased from the temperatures higher than $200^{\circ}C$ and $300^{\circ}C$, respectively. However, in use of both reductants, NO and $N_2O$ conversions decreased with increasing oxygen concentration. As a result, $H_2$ reductant could reduce simultaneously NO and $N_2O$ at relatively lower reaction temperature than CO. Also, NO and $N_2O$ conversions were less influenced by using $H_2$ reductant than CO one. Concentration ratio between NO and $N_2O$ did not affect their conversions regardless the type of reductants. Pretreatment of the catalyst in $H_2$ was more effective in simultaneous reduction of NO and $N_2O$ at low reaction temperature than that in $O_2$.

• Journal of the Korean Chemical Society
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• v.52 no.6
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• pp.614-621
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• 2008

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1308-1314
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• 1995

Changes in phase and microstructure were investigated in the SiC-AlN ceramics prepared by pressureless sintering using yttrium aluminum garnet (YAG) as a sintering aid at 200$0^{\circ}C$ and 210$0^{\circ}C$. The SiC/AlN ratio made a remarkable difference in densification, phase relations and the morphology of grains. In the AlN-rich composition, major phase was 2H and microstructure was composed of the densified equiaxed grains irrespective of the sintering temperatures. While those sintered at 200$0^{\circ}C$ were porous with major phase being 3C, the rod-like and the equiaxed grains were coexisted when sintered at 210$0^{\circ}C$ in the SiC-rich composition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.39-42
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• 1999

Nitrogen-doped SiC(3C) (N-SiC(3C)) epliayers were grown on Si(111) substrate at $1250^{\circ}C$ using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane(TMS) in $H_{2}$ carrier gas. SiC(3C) layer was doped using $NH_{3}$ during the CVD growth to be n-type conduction. Physical properties of N-SiC(3C) were investigated by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) patterns, Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Hall measurement, and current-voltage(I-V) characteristcs of the N-SiC(3C)/Si(p) diode. N-SiC(3C) layers exhibited n-type conductivity. The n-type doping of SiC(3C) could be controlled by nitrogen dopant using $NH_{3}$ at low temperature.

• Journal of the Korean Chemical Society
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• v.52 no.3
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• pp.249-256
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• 2008

3-Acetyl/Formyl 4-hydroxy-2H(1)-benzopyran-2-one on treatment with malonitrile and ethyl cyanoacetate yielded 1,1-dicyano-2-[4/-hydroxy-2/H(1)-benzopyran-2/-one-3/-yl] ethene/propene 2a-h and ethyl-2-cyano-3-[4/-hydroxy-2/H (1)-benzopyran-2/-one-3/-yl] propenoate/butenoate 3a-h respectively. The 1,3 dipolar reaction of 2a-h with NaN3 gave the tetrazole derivative 4a-h. 3a-h on cyclization with PPA gave 3-cyano-2H,5H-pyrano [3, 2-c] benzopyran-2,5-diones 5a-h which on 1,3 dipolar reaction with NaN3 to gave 3-(1/H-tetrazol-5/-yl)-2H,5H-pyrano[3, 2-c] benzopyran-2,5-diones 6a-h. The structures of the compounds have been established on the basis of the spectral and analytical data. All the compounds were screened for their antimicrobial activities and have been found to exhibited significant antibacterial activities. Compounds 2h and 4h showed the activity 50g/mL.

• Journal of the Korean Mathematical Society
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• v.38 no.3
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• pp.623-631
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• 2001

Let $\kappa$ be a real abelian field of conductor f and $\kappa$(sub)$\infty$ = ∪(sub)n$\geq$0$\kappa$(sub)n be its Z(sub)p-extension for an odd prime p such that płf$\phi$(f). he aim of this paper is ot compute the cohomology groups of circular units. For m>n$\geq$0, let G(sub)m,n be the Galois group Gal($\kappa$(sub)m/$\kappa$(sub)n) and C(sub)m be the group of circular units of $\kappa$(sub)m. Let l be the number of prime ideals of $\kappa$ above p. Then, for mm>n$\geq$0, we have (1) C(sub)m(sup)G(sub)m,n = C(sub)n, (2) H(sup)i(G(sub)m,n, C(sub)m) = (Z/p(sup)m-n Z)(sup)l-1 if i is even, (3) H(sup)i(G(sub)m,n, C(sub)m) = (Z/P(sup)m-n Z)(sup l) if i is odd (※Equations, See Full-text).

• Bulletin of the Korean Chemical Society
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• v.31 no.7
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• pp.1869-1874
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• 2010

By reducing PVP with $H_2NOH$.HCl and NaOH 2:2:1 mass ratios in aqueous ethanol, poly-N-vinyl pyrrolidone oxime [PVPO] was prepared with 92% yield. Applying the sol-gel concept, orthosilicic acid [OSA] was made by hydrolyzing TEOS with ethanol in 1:0.5 molar ratios using 1 N KOH aqueous solution as a catalyst. The OSA + PVPO + $_L$-Valine ($\alpha$-amino acid) were mixed with pure ethanolic medium in 1:2:2 mass ratios and refluxed at $78^{\circ}C$ and 6 pH for 6.5 h. A white residue of poly-N-vinyl pyrrolidone oximo-L-valyl-siliconate [POVS] appeared after 5 h. The heating of reaction mixture was stopped and the contents were brought to NTP. The residue formation of POVS was intensified with lowering a temperature and completely solidified within 5 h, was filtered using a vacuum pump with Whatmann filter paper no. 42. The residue of POVS was washed several times with 20% aqueous cold ethanolic solution and dried in vacuum chamber at $25^{\circ}C$ for 24 h. The MP was noted above $350^{\circ}C$. Structural and internal morphology were analyzed with IR and $^1H$-NMR, and SEM respectively. A drug loading and transporting ability of the POVS in water and at pH = 5 and 8 was determined chromatographically.

• Environmental Engineering Research
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• v.20 no.3
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• pp.246-253
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• 2015

The effects of carbon-to-nitrogen (C/N) ratio in simulated rice straw hydrolysates using glucose and ammonium chloride on polyhydroxyalkanoates (PHA) accumulation by Cupriavidus necator was investigated. In general, PHA accumulation rate was higher under higher degrees of N-deficient conditions (e.g., C/N ratio of 360:1) than lower degrees of N-deficient conditions (e.g., C/N ratio of 3.6:1 and 36:1). Also, the most PHA accumulation was observed during the first 12 h after the PHA accumulation initiation. This study showed that the similar PHA accumulation could be achieved by using different accumulation periods depending on C/N ratios. N source presence was important for new cell production, supported by approximately ten times greater PHA accumulation under the N-deficient condition ($NH_4Cl$ 0.01 g/L) than the N-free (without $NH_4Cl$) condition after 96 h. C/N ratio of the rice straw hydrolysate was approximately 160:1, based on the glucose content, and this accumulated $0.36{\pm}0.0033g/L$ PHA with PHA content of $21{\pm}3.1%$ after 12 h. Since external C or N source addition for C/N ratio adjustment increases production cost, an appropriate accumulation period may be used for PHA accumulation from organic wastes, based on the PHA accumulation patterns observed at various C/N ratios and C and N concentrations.