• Proceedings of the Earthquake Engineering Society of Korea Conference
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• 2002.03a
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• pp.42-50
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• 2002

The duration and H/V ratio(the amplitude ratio of the horizontal to vertical components) of ground motions caused by earthquakes in southern Korea are analyzed. Total 329 seismograms of horizontal component recorded at hypocentral distances of 10 to 350 km from 27 earthquakes with local magnitude 2 to 4 are used for the analysis. Simplified relation between the duration of ground motion( $T_{d}$) and the ratio($\chi$) of Arias intensity( $I_{A}$) and squared maximum acceleration($\alpha$$_{max}$$^{2}$) is determined to be $T_{d}$ = 3.423$\chi$$^2$+ 8.200$\chi$ + 0.029, which is useful for the estimation of the duration in southern Korea. There are three distinct distance ranges with different linear variations of the duration in hypocentral distance. They are distance intervals of 10~80km, 80~140km, and the distance greater than 140km. The duration in southern Korea shows clear proportionality to the local magnitude at magnitudes greater than 3.1. The value 1.37 of the H/V ratio obtained in southern Korea is similar to the value 1.4 of ENA(Eastern North America). The H/V ratio in southern Korea increases in the frequency range from 0.3 to 10Hz. The duration and H/V ratio of ground motions derived in this study could be used in the stochastic simulation of strong ground motion.ion.n.n.

• Journal of the Korean Society for information Management
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• v.6 no.1
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• pp.15-36
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• 1989

The r a p i d i n c r e a s e o f microcomputer technology has r e s u l t e d i n t h e broad a p p l i c a t i o n t o various f i e l d s . The purpose of t h l s paper 1s to design a computerized r e t r i e v a l system f o r nuclear information m a t e r i a l s using a microcomputer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.894-901
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• 1991

Contact-type linear image sensors have been fabricated by means of RF glow discharge decomposition method of silane and hydrogen mixtures. The dependences of the electrical and optical properties of these sensor on thickness, RF power, substrate temperature and ambient gas pressure have been investigated. the ITO/i-a-Si:H/Al structure film shows photosensitivity of 0.85 and photocurrent to dark current ratio ($I_{ph}/I_{d}$) of 150 at 5V bias voltage under 200${\mu}W/cm^[2}$ red light intensity. Under 200${\mu}W/cm^[2}$ green light intensity, the ratio is 100. In order to investigate photocarrier transport mechanism and to obtain ${\mu}{\gamma}$ product we have measured the I-V characteristics of these sensors favricated with several different deposition parameters under various light sources. The linear inage sensor for document reading has been operated under reverse bias condition with green light source, resulting in ${\mu}{\gamma}$ product of about 1.5$[\times}10^{-9}cm^{2}$/V.

• Progress in Superconductivity
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• v.8 no.1
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• pp.113-118
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• 2006

The design of superconducting magnets for a 600 kJ SEMS was discussed. The basic constraint conditions in the design of a 600 kJ SMES magnet were V-I loss(<1 W), inductance of magnet(<24 H), the number of Double Pancake Coils(DPC about 10), the number of turns of DPC(<300), outer diameter of DPC(close to 800 mm) and total length of HTS wire in a DPC(<500 m). As a result of optimum design, we obtained design parameters of the 600 kJ SMES magnet with two operating currents, 360 A and 370 A, which are in the limited conditions without V-I loss. V-I loss of each operating current was calculated with design parameters and V-I characteristic of the HTS wire. As a result of calculations, V-I losses with operating currents of 360 A and 370 A were 0.6 W and 1.86 W, respectively. Even though all design parameters of the SMES magnet in case of operating current of 360 A were in the restricted conditions, V-I loss of SMES magnet showed a tendency to generate at local DPCs, which are located on the top and the bottom of the SMES magnet more than that of the other DPCs.

• Progress in Superconductivity
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• v.3 no.2
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• pp.146-150
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• 2002

We performed the point contact spectroscopy on newly discovered superconductor $MgB_2$ thin films with Au tip. In the point contact spectroscopy of the metallic Sharvin limit, the differential conductance below the gap is twice as that above the gap by virtue of Andreev Reflection. After some surface cleaning processes of sample preparation such as ion-milling and wet etching, the obtained dI/dV versus voltage curves are relatively well fitted to the Blonder-Tinkham-Klapwijk (BTK) formalism. Gaps determined by this technique were distributed in the range of 3meV~ 8meV with the BCS value of 5.9meV in the weak coupling limit. We attribute these discrepancies to the symmetry of the gap parameter and the degradation of the surface of the sample. We also present the temperature dependence of the conductance vs voltage curve and thereby the temperature dependence of the gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.47-52
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• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.953-954
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• 2000

The equilibrium geometrical structures of silver atom clusters at their electronic ground states have been theo-retically determined by using the nonrelativistic semiempirical INDO/1 method. The clusters investigated are Agn, Agn+, and Agn- (n = 7 , 8, 9). In order to find the most stable structure, i.e., the global minimum in energy hypersurface, geometry optimization and energy calculation processes have been repeatedly performed for all the possible graphical models by changing the bond parameters (resonance integral values). The heptamers are pentagonal bipyramidal-Ag7(D5h), Ag7+ (D5h), Ag7- (D5h); the octamers are pentagonal bipyramidal with one atom capped-Ag8(D2d), Ag8+ (Cs), Ag8- (D2d); the nonamers are pentagonal bipyramidal with two atoms capped -Ag9(C2v), Ag9+ (C2v), Ag9- (C2v). Our structures are in good agreement with those by ab initio calculations ex-cept for the anionic Ag9- cluster. And it is noted that the INDO/1 method can accurately predict the Ag cluster geometries when a proper set of bond parameters is used.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.616-618
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• 2007

This paper describes the mechanical and electrical test on HVDC submarine cable, Flexible Repair Joint and termination for 180kV. This HVDC submarine cable was manufactured using LS cable's unique skill and would be applied the HVDC submarine cable system in korea. The performance test consist of mechanical test and electrical test. The tensile bending test and tensile test was done as the mechanical test and Electrical test is DC voltage and Impulse test. The tensile bending test carried out 6 times(double of specified times) for maximum reliability. The DC test voltage is $\pm$400kV/1hr. We estimate the lower limit of DC breakdown voltage is 600kV. The impulse test voltage is $\pm$800kV/10shots. The type of developed cables is the MI type. Its insulation consist of paper tapes impregnated with a high viscosity oil. The development of new HVDC cable is available for HVDC underground or submarine power transmission. The developed HVDC cable, FRJ and termination have passed the mechanical and electrical test successfully and showed excellent performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.551-554
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• 2000

The stability of $Pr_6$$O_{11}$-based ZnO varistors doped with $Y_2$$O_3$ was investigated under various d.c. stresses. The varistors were sintered at $1350^{\circ}C$ for 1h in the addition range of 0.0 to 4.0 mol% $Y_2$$O_3$. The varistors doped with $Y_2$$O_3$ exhibited much higher nonlinearity than that without $Y_2$$O_3$. In Particular, the varistors containing 0.5 mol% $Y_2$$O_3$ showed very excellent V-I characteristics, which the nonlinear exponent was 51.19 and the leakage current was 1.32 $\mu\textrm{A}$. And these varistors also showed an excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent were -0.80% and -2.17%, respectively, under 4th d.c. stress, such as (0.80 $V_ {1mA}$/$90^{\circ}C$/12h)+(0.85 $V_{1mA}$/$115^{\circ}C$/12h)+(0.90 $V_{1mA}$/$120^{\circ}C$/12h)+(0.95 $V_{1mA}$/$125^{\circ}C$/12h). Consequently, since $Pr_ 6$$O_{11}$-based ZnO varistors doped with 0.5 mol% $Y_2$$O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the superior varistors in future.

• Bulletin of the Korean Chemical Society
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• v.19 no.1
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• pp.63-67
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• 1998

The synthesis and characterization of the monomeric group 13 heterocyclic thiosemicarbazone complexes $Me_2M[SC_4H_3CHNNC(S)SCH_3]$ (M=Al (2), Ga (3)) are described. Compounds 2-3 were prepared using $MMe_3$ (M=Al, Ga) in toluene with 2-thiophenecarboxaldehyde-S-methyldithiocarbazat e under anaerobic conditions. These complexes have been characterized by $^1H\;NMR,\; ^{13}C\; NMR$, elemental analyses, and single-crystal X-ray diffraction. 2 crystallizes in the monoclinic space group $P2_1/c$ with unit cell parameters a=10.2930(5) Å, b=18.564 (1) Å, c=7.3812(6) Å, V=1347.9(2) Å3, $D_{calc}=1.342\; gcm^{-3}$ for Z=4, 9281 reflections with $I_o<3{\sigma}\;(I_o),$ R1=0.0500 and wR2=0.0526. 3 crystalizes in the orthorhombic space group $P_{bca}$ with unit cell parameters a=13.340(3) Å, b=19.9070(5) Å, c=11.3690(2) Å, $V=2673.88(9)\;{\AA}^3$, $D_{calc}=1.511\; gcm^{-3}$ for Z=8, 17004 reflections with $I_o>3{\sigma}\;(I_o),$, R1=0.0480 and wR2=0.0524. Compound 3 is a monomeric gallium compound with a weak interaction between the pendant thiophene and the gallium center.