• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1885-1887
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• 2000

In this paper we introduce preventative and diagnostic systems developed to prevent substations from accidental fault of electric power transmitting apparatus. We propose monitoring and diagnostic system for ultra high voltage GIS and main transformer of 765kV substations as an example of preventative and diagnostic techniques being applied in Korea. We also present a guideline to construct and manage an expert system for this purpose. Finally, an engineering solution as a substation management support system is proposed.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.11a
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• pp.53-58
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• 1996

국내의 17$\times$17형 원전연료는 종전의 KOFA 연료로부터 Westinghouse(WH)사 Vantage-5H (V5H) 연료로 대체중에 있으며, 울진 1,2호기의 경우 8주기부터 V5H 연료를 장전한다. V5H 연료는 연료 상하부를 천연우라늄으로 구성함으로써 축방향 농축도가 균일하지 않으므로 기존 FRAMATOME사의 2차원 노심운전분석코드체계 (CEDRIC-CARIN-ESTHER)로는 정확한 노심 분석이 불가능하다. 따라서, 본 연구에서는 V5H 연료가 장전되는 울진 1,2호기에 대한 3차원 노심분석을 위하여 WH사의 INCORE-3D와 TOTE 코드를 PC-Version으로 개발하여 기존 코드체계를 대체하였다. 또한 WH형 원전과는 상이한 형식을 갖는 울진 1,2호기의 중성자속 측정 자료를 INCORE 코드에 적합한 형태로 변환하기 위한 C2I 코드를 개발하고 울진 1호기 6주기의 실제 중성자속 측정 자료를 이용하여 검증하였다. 이들 개발 코드들을 울진 원전에 설치하고, 1호기 8주기 출력상승중 노심출력분포 측정시험(75% 및 100% 출력시험)에 적용한 결과 기술지침서 상의 모든 제한사항이 만족되며 코드성능 또한 만족함을 확인하였다.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.281-283
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• 1993

We have studied and researched about the pipe steel tower. Which can be designed briefly with fewer members and due to electrical supported with single member economically and safely as higher structure and bigger load is required for 765kv T/L and it is difficult to transmit the electricity with good quality Safely and economically by the traditional steel tower composed of single angle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.95-95
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• 2008

본 연구에서는 SiGe p-MOSFET을 제작하여 I-V 특성과 게이트 길이, $V_D$, $V_G$의 변화에 따른 저주파 노이즈특성을 측정하였다. Si 기판위에 성장한 $Si_{0.88}Ge_{0.12}$으로 제작된 SiGe p-MOSFET의 채널은 게이트 산화막과 20nm 정도의 Si Spacer 층으로 분리되어 있다. 게이트 산화막은 열산화에 의해 70$\AA$으로 성장되었고, 게이트 폭은 $25{\mu}m$, 게이트와 소스/드레인 사이의 거리는 2.5때로 제작되었다. 제작된 SiGe p-MOSFET은 빠른 동작 특성, 선형성, 저주파 노이즈 특성이 우수하였다. 제작된 SiGe p-MOSFET의 ESD 에 대한 소자의 신뢰성과 내성을 연구하기 위하여 SiGe P-MOSFET에 ESD를 lkV에서 8kV까지 lkV 간격으로 가한 후, SiGe P-MOSFET의 I-V 특성과 게이트 길이, $V_D$, $V_G$의 변화에 따른 저주파 노이즈특성 변화를 분석 비교하였다.

• The Korean Journal of Physiology and Pharmacology
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• v.17 no.2
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• pp.163-167
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• 2013

In the present study, the effect of intrathecal (i.t.) or intracerebroventricular (i.c.v.) administration with cholera toxin (CTX) on the blood glucose level was examined in ICR mice. The i.t. treatment with CTX alone for 24 h dose-dependently increased the blood glucose level. However, i.c.v. treatment with CTX for 24 h did not affect the blood glucose level. When mice were orally fed with D-glucose (2 g/kg), the blood glucose level reached to a maximum level at 30 min and almost returned to the control level at 120 min after D-glucose feeding. I.c.v. pretreatment with CTX increased the blood glucose level in a potentiative manner, whereas i.t. pretreatment with CTX increased the blood glucose level in an additive manner in a D-glucose fed group. In addition, the blood glucose level was increased in formalin-induced pain animal model. I.c.v. pretreatment with CTX enhanced the blood glucose level in a potentiative manner in formalin-induced pain animal model. On the other hand, i.t. pretreatment with CTX increased the blood glucose level in an additive manner in formalin-induced pain animal model. Our results suggest that CTX administered supraspinally or spinally differentially modulates the regulation of the blood glucose level in D-glucose fed model as well as in formalin-induced pain model.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.443-446
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• 1989

154kV insulator strings are frequently damaged by lightning strokes, overvoltage and contamination. And this insulator damage inflicts a loss on the power company. The purpose of this paper is to develop the arcing horn as a protective device of 154kV insulator strings against lightning flashover and overvoltages. So We have developed the arcing horn which is suitable for 154kV transmission line and estimated the performance of arcing horn by high current arcs and high voltage tests.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.311-313
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• 2008

본 논문에서는 연료전지를 위한 독립형 3kW급 인버터 시스템을 제안한다. 논문에 사용된 연료전지는 26V에서 46V의 가변적인 출력을 가지므로 220V의 교류전압으로 변환하기 위해서 높은 변압비를 가지는 DC/DC 컨버터로에서 400V의 DC링크 전압으로 승압되고 최종적으로 DC/AC 인버터를 통해서 220V의 교류전압으로 변환된다. 또한 DC/DC 컨버터의 직류출력전압을 저장하여 연료전지 초기구동과 제어기 전원에 공급함으로써 독립적인 시스템으로써 동작할 수 있다. 본 논문에서 제안한 시스템은 각 부분별 시뮬레이션을 통해서 검증하였다.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.49-51
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• 2002

In this thesis, Josephson junction using high-Tc superconducting multi-layer thin film has been fabricated by on-axis RF magnetron sputtering method. And, the characterizations were performed by X-ray diffraction, SEM and the measuring system of critical current density. The physical properties of multi-layer superconducting thin films were also analyzed with the measured results. To fabricate the multi-layer superconducting thin films, the optimum partial pressure of Argon and Oxgen and the temperature of substrate were measured. Also, YBaCuO thin film was grown on MgO and $SrTiO_3$ substrates by rf-sputtering and LGO thin film of 30 A was epitaxially grown on the YBaCuO thin film as a josephson junction with the same condition. The schottky barrier at the contact surface between YBaCuO/LGO and YBaCuO/Au and the energy gap of 0.5 ${\sim}$ 0.6 mV in Nb were observed from the dI/dV-V of YBaCuO/LGO/Au/Nb and YBaCuO/Au/Nb.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.834-838
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• 2002

In this paper, we have fabricated 4H-SiC schottky diodes utilizing a metal-oxide overlap structure for electric filed termination. The barrier height and Ideality factor were measured by current-voltage, capacitance-voltage characteristics. Schottky barrier height(SBH) were 1.41ev for Ni and 1.35eV for Pt, 1.52eV for Pt/Ti at room temperature and Pt/Ti Schottky diode exhibited Ideality factor was 1.06 to 1.4 in the range of $25^{\circ}C{\sim}200^{\circ}C$. To improve the reverse bias characteristics, an edge termination technique is employed for Pt/Ti/4H-SiC Schottky rectifiers and the device show excellent characteristics with higher blocking voltage up to 780V compared with unterminated devices.

• Proceedings of the Korean Nuclear Society Conference
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• 2001.05a
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• pp.513.1-513
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• 2001