• Journal of Korean Society of Steel Construction
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• v.27 no.3
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• pp.261-271
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• 2015

Steel concentrically braced frame is an efficient system that can acquire resistance against the lateral force of buildings with the least amount of quantity. In this study is intended to proceed on the research of schemes for reinforcement by supplementing previously installed H-formed brace with non-welded cold-formed plastic stiffening materials restricting the flexure and buckling and acquire a consistent strength on the tensile and compressive force. As for the measures of supplementing previously-installed inverted V-formed braced frame, stiffening materials in the previous studies were converted to weak-axial supplementing materials to suggest a specific scheme evaluating the structural function through an experiment of members, interpretation of members, and frame-focused experiment. Reinforced brace satisfied the requirement to be prevent AISC brace from being ruptured due to imbalanced strength in the beam.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• Journal of the Korea Concrete Institute
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• v.27 no.6
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• pp.625-632
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• 2015

In this study, a comparative analysis have been conducted to examine seismic reinforcement effect of a school building that is designed with a CBD (Channel Beam Damper) system supported by H-frame with existing non-seismic RC frame. As a result of experiment, seismic reinforcement specimen with CBD system showed hysteretic characteristics of a large ellipse with great energy dissipation ability and increased strength and stiffness, while non-seismic design specimen showed rapid reduction in strength and brittle shear failure at top and bottom of the left and right column. In addition, comparing the stiffness reduction between the two specimens, CBD system was effective in preventing the reduction of stiffness. Energy dissipation ability of specimen reinforced by CBD system was about 4.0 times higher than the non-reinforced specimen. Such enhancement in energy dissipation ability could be considered as the result of improved strength and deformation for further application in designing of seismic reinforcement.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.8 s.227
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• pp.1109-1115
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• 2004

The objective of this study is to elucidate what governs delayed hydride cracking (DHC) in Zr-2.5Nb tubes by correlating the striation spacings with DHCV(DHC Velocity). To this end, DHC tests were conducted on the compact tension specimens taken from the Zr-2.5Nb tubes at different temperatures ranging from 100 to $300^{\circ}C$ with a 3 to 6 data set at each test conditions. The compact tension specimens were electrolytically charged with 27 to 87 ppm H before DHC tests. After DHC tests, the striation spacings and DHCV were determined with the increasing the test temperature and yield strength. The striation spacing and DHCV increased as a function of yield $strength^2$ and the temperature. Since the plastic zone size ahead of the crack tip can be represented by ${\sim}(K_{IH}/{\sigma}_{Y})^2$, we conclude that the striation spacing is governed by the plastic zone size which in turn determines a gradient of hydrogen concentration at the crack tip. The relationship between the plastic zone size and the striation spacing was validated through a complimentary experiment using double cantilever beam specimens. Two main factors to govern DHCV of Zr-2.5Nb tubes are concluded to be hydrogen diffusion and a hydrogen concentration gradient at the crack tip that are controlled by temperature and yield strength, respectively. The activation energy of DHCV in the Zr-2.5Nb tubes is discussed on the basis of temperature dependency of hydrogen diffusion and the striation spacing.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.259-259
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• 2010

Periodically polarity inverted (PPI) ZnO structures on (0001) Al2O3 substrates are demonstrated by plasmas assisted molecular beam epitaxy. The patterning and re-growth methods are used to realize the PPI ZnO by employing the polarity controlling method. For the in-situ polarity controlling of ZnO films, Cr-compound buffer layers are used.[1, 2] The region with the CrN intermediate layer and the region with the Cr2O3 and Al2O3 substrate were used to grow the Zn- and O-polar ZnO films, respectively. The growth behaviors with anisotropic properties of PPI ZnO heterostructures are investigated. The periodical polarity inversion is evaluated by contrast images of piezo-response microscopy. Structural and optical interface properties of PPI ZnO are investigated by the transmission electron microcopy (TEM) and micro photoluminescence ($\mu$-PL). The inversion domain boundaries (IDBs) between the Zn and the O-polar ZnO regions were clearly observed by TEM. Moreover, the investigation of spatially resolved local photoluminescence characteristics of PPI ZnO revealed stronger excitonic emission at the interfacial region with the IDBs compared to the Zn-polar or the O-polar ZnO region. The possible mechanisms will be discussed with the consideration of the atomic configuration, carrier life time, and geometrical effects. The successful realization of PPI structures with nanometer scale period indicates the possibility for the application to the photonic band-gap structures or waveguide fabrication. The details of application and results will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.283.2-283.2
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• 2014

열필라멘트 화학증착공정(Hot Wire Chemical Vapor Deposition)에서 기상 에서 생성되는 하전된 실리콘 나노입자와 저온결정성 실리콘박막 증착의 연관성을 압력의 변화에 따른 상호비교를 통해 조사하였다. 필라멘트 온도는 $1800^{\circ}C$로 고정시키고 0.3~2 torr의 범위에서 공정 압력을 변화시키면서 증착하였다. 압력이 증가함에 따라 증착된 실리콘 박막의 결정화도는 증가하였으며, 증착속도는 감소하였다. 반응기 압력에 따른 기상에서 생성되는 나노입자의 크기분포의 변화를 조사하기 위하여 탄소막이 코팅된 투과전자현미경(Transmission Electron Microscopy) 그리드 위에 실리콘 나노입자를 포획하고 관찰하였다. 포획된 실리콘 나노입자의 크기분포와 개수농도는 압력이 증가함에 따라 감소하였다. 투과전자현미경을 이용하여 분석한 결과, 나노입자는 결정성 구조를 보였다. 압력이 증가함에 따라 나노입자의 크기가 감소하고 개수농도가 감소하는 것은 증착속도의 감소와 관련됨을 알 수 있다. 한편, 공정압력 증가에 따른 나노입자의 크기분포 및 개수농도 감소와 증착속도의 감소는 일반적으로 알려진 기상에서 석출하는 고상의 평형석출량(equilibrium amount of precipitation)이 압력의 증가함에 따라 증가한다는 사실과 일치하지 않는다. 이러한 압력경향성은 Si-H 시스템이 0.3~2 torr의 압력 영역에서 retrograde solubility를 갖는 것을 의미한다. 나노입자의 하전여부, 크기분포 및 개수농도를 측정하기 위하여 입자빔질량분석장비(Particle Beam Mass Spectroscopy)를 이용하였다. 그 결과, 실리콘 나노입자는 양 또는 음의 극성을 가진 하전된 상태임을 확인하였고, 투과전자현미경(TEM) grid에 포획한 실리콘 나노입자의 크기와 경향성이 일치하였다. 이는 나노입자가 저온의 기판에서 핵생성되어 성장하여 생성된 것이 아니라 열필라멘트 주위의 고온영역에서 생성된 것을 의미한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.9-14
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• 1996

The dependence of microstructural and optical properties of Ag-In-Sb-Te thin films on annealing heat-treatments was studied. It was found from the present work that the increase of reflectance after annealing heat-treatment is related with phase change of Ag-In-Sb-Te thin film from amorphous state to crystalline phases which involve Sb crystalline phase and AgInTe$_2$ stoichiometric phase. On the other hand, the reflectance is decreased after high temperature annealing (above 450$^{\circ}C$), due to the morphology .mange of film surface. For the purpose of practical application(erasable optical disk), we fabricated quadrilayered Ag-In-Sb-Te alloy disk, and annealed it with continuous laser beam. As result of this laser\ulcorner annealing treatment, we found that the increment of reflectance is 9.3% at 780nm wavelength. It might be considered that Ag-In-Sb-Te alloy optical disk is the big promising candidate for the erasable optical memory medium.

• Composites Research
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• v.31 no.1
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• pp.23-29
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• 2018

The RFI process can be applied to very thick structures without limiting the resin viscosity. When the proper thickness of the resin film cannot be set, the resin film creates either the non-impregnated section or the excessive resin contents and this leads to the deterioration of mechanical properties. Therefore, this study proposed a method for setting the resin film thickness in the RFI process. The fiber compaction behavior test was proposed by setting the proper resin film thickness and the properties of composites were evaluated through short beam shear strength test, compression test and porosity measurement to verify the proposed method. The evaluation of physical properties of composites was conducted and an appropriate level of resin film thickness was found based on the results of fiber compaction behavior test.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.321-322
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• 2006

In many manufacturing processes such as web formation, manufacturing of paper and nonwoven, fabric weaving, etc., planar sheets are transported and at the same time appropriate tension is imposed. The input material rolled up on beams is fed by unwinding the beam and the processed is then taken up on beams by winding it. While processed, the planar sheets are thrown under the processing load of impulse form, which causes irregular thickness of the processed sheet. To improve the quality of the product, a dynamic model is needed and the dynamic characteristics is to be analyzed by simulation. This study shows that density variation dynamics of the in-process-sheet in the machine direction can be described at each moment of disturbing impacts in forms of difference equations, while the impacts and tension, the time-dependency of the material properties were taken into account. Simulation showed the most serious variation of the density occurred in the process starting phase. The starting velocity curve with step form showed the least variation of the density. As the time order of the function of the starting velocity cure becomes higher, the density variation gets greater.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.174-181
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• 2003

Ta diffusion barriers have been deposited on Si (100) substrate by applying a negative substrate bias voltage. The effect of the substrate bias voltage on the properties of the Ta films was investigated. In the case of the Ta films deposited without the substrate bias voltage, a columnar structure and small grains were observed distinctly, and the electrical resistivity of the deposited Ta films was very high (250 $\mu\Omega$cm). By applying the substrate bias voltage, no clear columnar structure and grain boundary were observed. The resistivity of the Ta films decreased remarkably and at a bias voltage of -125 V, reaching a minimum value of 40 $\mu\Omega$cm, which is close to that of Ta bulk (13 $\mu\Omega$cm). The thermal stability of Cu(100 mm)/Ta(50 mm)/Si structures was evaluated after annealing in H2 atmosphere for 60 min at various temperatures. The Ta films deposited by applying the substrate bias voltage were found to be stable up to $600^{\circ}C$, while the Ta films deposited without the substrate bias voltage degraded at $400^{\circ}C$.