• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.185.2-185.2
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• 2014

We have studied the atomic and electronic structure of graphene nanoribbons (GNRs) on a hexagonal boron nitride (h-BN) sheet with intercalated atoms using first-principles calculations. The h-BN sheet is an insulator with the band gap about 6 eV and then it may a good candidate as a supporting dielectric substrate for graphene-based nanodevices. Especially, the h-BN sheet has the similar bond structure as graphene with a slightly longer lattice constant. For the computation, we use the Vienna ab initio simulation package (VASP). The generalized gradient approximation (GGA) in the form of the PBE-type parameterization is employed. The ions are described via the projector augmented wave potentials, and the cutoff energy for the plane-wave basis is set to 400 eV. To include weak van der Waals (vdW) interactions, we adopt the Grimme's DFT-D2 vdW correction based on a semi-empirical GGA-type theory. Our calculations reveal that the localized states appear at the zigzag edge of the GNR on the h-BN sheet due to the flat band of the zigzag edge at the Fermi level and the localized states rapidly decay into the bulk. The open-edged graphene with a large corrugation allows some space between graphene and h-BN sheet. Therefore, atoms or molecules can be intercalated between them. We have considered various types of atoms for intercalation. The atoms are initially placed at the edge of the GNR or inserted in between GNR and h-BN sheet to find the effect of intercalated atoms on the atomic and electronic structure of graphene. We find that the impurity atoms at the edge of GNR are more stable than in between GNR and h-BN sheet for all cases considered. The nickel atom has the lowest energy difference of ~0.2 eV, which means that it is relatively easy to intercalate the Ni atom in this structure. Finally, the magnetic properties of intercalated atoms between GNR and h-BN sheet are investigated.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.59-65
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• 1997

Efficient Si(100) etching by thermal H atoms at low substrate temperatures has been achieved. Gas-phase etching product $SiH_4$(g) upon H atom bombardment resulting from direct abstraction of $SiH_3$(a) by impinging H atoms was detected with a quadrupole mass spectrometer over the substrate temperature range of 105-408 K Facile depletion of all surface silyl ($SiH_3$) groups the dissociative adsorption product of disilane ($Si_2H_6$) at 105K from Si(100)2$\times$1 by D atoms and continuous regeneration and removal of $SiD_3$(a) were all consumed. These results provide direct evidence for efficient silicon surface etching by thermal hydrogen bombardment at cryogenic temperatures as low as 105K We attribute the high etching efficiency to the formation and stability of $SiH_3$(a) on Si(100) at lowered surface temperatures allowing the $SiH_3$(a) abstraction reaction by additional H atom to produce $SiH_4$((g).

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.369-376
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• 2003

Coulson (ZINDO), Mulliken $(MP2/6-31G^*)$ and Natural $(MP2/6-31G^*)$ population analyses of several large molecules were performed by the Fragment Reassociation (FR) method. The agreement between the conventional ZINDO (or conventional MP2) and FR-ZINDO (or FR-MP2) charges of these molecules was excellent. The standard deviations of the FR-ZINDO net atomic charges from the conventional ZINDO net atomic charges were 0.0008 for $C_{10}H_{22}$ (32 atoms), 0.0012 for $NH_2-C_{16}O_2H_{28}-COOH$ (53 atoms), 0.0014 for $NH_3^+-C_{16}O_2H_{28}-COOH$ (54 atoms), 0.0017 for $NH_2-C_{16}O_2H_{28}-COO^-$ (52 atoms), 0.0019 for $NH_3^+-C_{16}O_2H_{28}-COO^-$ (53 atoms), 0.0024 for a conjugated model $(O=CH-(CH=CH)_{15}-C=O-(CH=CH)_{12}-CH=CH_2)$, 118 atoms), 0.0038 for aglycoristocetin $(C_{60}N_7O_{19}H_{52}^+$, 138 atoms), 0.0023 for a polypropylene model complexed with a zirconocene catalyst $(C_{68}H-{121}Zr^+$, 190 atoms) and 0.0013 for magainin $(C_{112}N_{29}O_{28}SH_{177}$, 347 atoms), respectively. The standard deviations of the FR-MP2 Mulliken (or Natural) partial atomic charges from the conventional ones were 0.0016 (or 0.0016) for $C_{10}H_{22}$, 0.0019 (or 0.0018) for $NH_2-C_{16}O_2H_{28}-COOH$ and 0.0033 (or 0.0023) for $NH_3^+-C_{16}O_2H_{28}-COO^-$, respectively. These errors were attributed to the shape of molecules, the choice of fragments and the degree of ionic characters of molecules as well as the choice of methods. The CPU time of aglycoristocetin, conjugated model, polypropylene model complexed with zirconocene and magainin computed by the FR-ZINDO method was respectively 2, 4, 6 and 21 times faster than that by the normal ZINDO method. The CPU time of $NH_2-C_{16}O_2H_{28}-COOH\;and\;NH_3^+-C_{16}O_2H_{28}-COO^-$ computed by the FR-MP2 method was, respectively, 6 and 20 times faster than that by the normal MP2 method. The largest molecule calculated by the FR-ZINDO method was B-DNA (766 atoms). These results will enable us to compute atomic charges of huge molecules near future.

• Bulletin of the Korean Chemical Society
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• v.19 no.2
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• pp.231-235
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• 1998

Two holmium β-diketonate complexes, Ho(hfa)3(H2O)2 (1) and [Ho(hfa)3(H2O)2](triglyme) (2), have been prepared and characterized by IR, TGA, and single-crystal X-ray analyses. These complexes show polymeric chains by the intermolecular hydrogen bondings. The donor atoms of the intermolecular hydrogen bonding in both complexes are hydrogen atoms of the coordinated water molecules. The acceptor atoms in 1 are the carbonyl oxygen atoms of β-diketonate ligands whereas those in 2 are oxygen atoms of the triglyme ligand. While compound 1 decomposes cleanly to Ho2O3, compound 2 sublimes intact. Crystal data for 1 and 2 are as follows: Ho(hfa)3(H2O)2 triclinic P1, a=10.158(4), b=11.628(2), c=12.579(6) Å, α=67.02(3)°, β=73.95(4)°, γ=76.12(2)°, V=1299.8(8) Å3. [Ho(hfa)3(H2O)2](triglyme), monoclinic P21/c, a=12.559(3), b=19.111(2), c=16.789(6) Å, β=110.59(4)°, V=3772(2) Å3.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.286-290
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• 2002

Hydrogen atom production channels from photodissociation of benzene, phenylacetylene, and benzaldehyde at 243 nm have been investigated by detecting H atoms using two photon absorption at 243.2 nm and induced fluorescence at 121.6 nm. Translational energies of the H atoms were measured by Doppler broadened H atom spectra. By absorption of two photons at 243 nm, the H atoms are statistically produced from benzene and phenylacetylene whereas the H atoms from the aldehyde group in benzaldehyde are produced from different pathways. The possible dissociation mechanisms are discussed from the measured translational energy releases.

• Korean Journal of Crystallography
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• v.11 no.2
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• pp.71-74
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• 2000

The title compound, [Cr(OC3H6N2)6](NO3)3·4H2O, was crystallized in the centrosymmetric space group P with two half molecules in an asymmetric unit, and the two complete molecules are generated by inversion symmetry located at Cr atoms. Therefore, the Cr atoms are coordinated to six imidazolidone ligands through the oxygen atoms, and both CrO6 units have a slightly distorted octahedral geometry.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.877-881
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• 2006

We obtained sputtering yields for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found to have less $24^{\sim}^30%$ sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated $Ga^+$ ion beam whose energies ranged from 10 keV to 14 keV. And $MgAl_2O_4$ layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that $MgAl_2O_4/MgO$ and MgO have secondary electron emission $coefficient({\gamma})$ values from 0.09 up to 0.12 for $Ne^+$ ion whose energies ranged from 50 eV to 200 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.175-175
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• 2000

Si(100) surfaces were exposed to gas-phase thermal-energy hydrogen atoms, H(g). We find that thermal H(g) atoms etch, amorphize, or penetrate into the crystalline silicon substrate, depending on the employed Ts range during the H(g) exposure. We find that etching is enhanced as Ts is lowered in the 300-700K range, while amorphous silicon hydride (a-Si:H) formation dominates at a Ts below 300K. This result was well explained by the fact that formation of the etching precursor, SiHx(a), and amorphization are both facilitated by a lower Ts, whereas the final step for etching, SiH3(a) + H(g) longrightarrow SiH3(g), is suppressed at a lower Ts. we also find that direct absorption of H(g) by the crystalline bulk of Si(100) substrate occurs within a narrow Ts window of 420-530K. The bulk-absorbed hydrogen evolved out molecularly from Si(100) at a Ts 80-120K higher than that for surface monohydride phase ($\beta$1) in temperature-programmed desorption. This bulk-phase H uptake increased with increasing H(g) exposure without saturation within our experimental limits. Direct absorption of H(g) into the bulk lattice occurs only when the surface is atomically roughened by surface etching. While pre-adsorbed hydrogen atoms on the surface, H(a), were readily abstracted and replaced by D(g), the H atoms previously absorbed in the crystalline bulk were also nearly all depleted, albeit at a much lower rate, by a subsequent D(g) at the peak temperature in TPD from the substrate sequentially treated with H(g) and D(g), together with a gas phase-like H2 Raman frequency of 4160cm-1, will be presented.

• Bulletin of the Korean Chemical Society
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• v.7 no.2
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• pp.108-110
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• 1986

The solution epr spectra of ${\alpha}-1,2,3-[H_nPV(IV)V_2W_9O_{40}]^{(7-n)-}$were measured at various pH and three protonated species have been identified. The spectrum of $H_3PV(IV)Ⅴ_2$ consisting of 8 lines indicates that the V-OH-V bridge prevents effectively the electron transfer between the vanadium atoms. The spectrum of $H_2PV(IV)V_2$ consisting of 15 lines can be interpreted by assuming that the electron is hopping fast between the two vanadium atoms in the V-O-V sequence. The multi-line spectrum of $HPV(IV)V_2$ is interpreted as a poorly resolved 43-line spectrum which originates from the electron hopping among the three vanadium atoms with the forward and backward transition probabilities of 4:1 in the OH-V-O-V sequence.