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Effect of heating rate on calcination heat treatment of YBCO thin films by DCA-MOD method (DCA-MOD 법으로 YBCO 박막 제조시 하소열처리의 승온속도 효과)

  • Kim, Byeong-Joo;Kim, Hye-Jin;Cho, Han-Woo;Kwon, Youn-Kyung;Ryu, Jung-Hee;Lee, Hee-Gyoun;Hong, Gye-Won
    • Progress in Superconductivity
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    • v.8 no.2
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    • pp.186-192
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    • 2007
  • High $J_c\;YBa_2Cu_3O_{7-x}$ superconducting films have been fabricated $LaAlO_3(100)$ substrate by MOD method using dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. Heating rate was varied in order to optimize the calcination heat treatment condition in DCA-MOD method. Coated films were calcined at lower temperature up to $500^{\circ}C$ in flowing humid oxygen atmosphere. The heating rate was calcined from $13.3^{\circ}C/min\;to\;0.28^{\circ}C/min$. Conversion heat treatment was performed $800^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. Surface and cross sectional SEM microstructures showed that particle sizes were increased with heating rate at a calcination step. The amount of pores was increased with heating rate in the calcined films. Dense microstructure and sharp texture were developed in an YBCO films after conversion heat treatment. A high critical current density (Jc) of $1.26MA/cm^2$ (@77 K and self-field) was obtained for the YBCO film which was prepared with a heating rate of $0.28^{\circ}C/min$.

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Substrate dependence of the deposition behavior of $CeO_2$ buffer layer prepared by MOCVD method (MOCVD 법에 의해 제조된 $CeO_2$ 버퍼층 증착 거동의 기판 의존성)

  • Jun, Byung-Hyu;Choi, Jun-Kyu;Jung, Woo-Young;Lee, Hee-Gyoun;Hong, Gye-Won;Kim, Chan-Joong
    • Progress in Superconductivity
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    • v.7 no.2
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    • pp.130-134
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    • 2006
  • Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

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Effect of heat-treatment parameter of YBCO film by TFA-MOD process (TFA-MOD법에 의한 YBCO 박막의 열처리변수 효과)

  • Jang, Seok-Hern;Lim, Jun-Hyung;Kim, Kyu-Tae;Lee, Jin-Sung;Yoon, Kyung-Min;Joo, Jin-Ho;Lee, Hee-Gyoun;Hong, Gye-Won
    • Progress in Superconductivity
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    • v.7 no.2
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    • pp.135-139
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    • 2006
  • We fabricated YBCO coated conductors (CCs) by TFA-MOD process and evaluated microstructure, texture formation, and critical temperature ($T_c$) and current ($I_c$). YBCO precursor solution was synthesized using metal-trifluoroacetates and dip coated on $LaAlO_3$(LAO) substrate. The phase formation and microstructure was characterized by X-ray diffraction and scanning electron microscopy (SEM) and the degree of texture was evaluated by pole-figure analysis. The CC was heat-treated in various calcining temperatures ($370^{\circ}C-460^{\circ}C$) and firing temperatures ($750^{\circ}C-800^{\circ}C$). As fired at $775^{\circ}C$ for 4h, the CC had the highest $T_c$ of 89.5 K and $I_c$ of 40 A/cm-width ($J_c=2.0\;MA/cm^2$). Microstructural observation indicated that the YBCO film was dense and homogeneous and had a strong cube texture without formation of second phase and its in-plane full-width at half-maxima; $5.2^{\circ}$ under optimum condition.

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Texture Formation of Eletroplated Nickel and Nickel Alloy on Cu Substrate (구리 기판에 전착시킨 니켈과 니켈합금의 집합조직 형성)

  • Kim, Jae-Geun;Lee, Sun-Wang;Kim, Ho-Jin;Hong, Gye-Won;Lee, Hee-Gyoun
    • Progress in Superconductivity
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    • v.7 no.2
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    • pp.145-151
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    • 2006
  • Nickel and nickel-tungsten alloy were electroplated on a cold rolled and heat treated copper(Cu) substrate. 4 mm-thick high purity commercial grade Cu was rolled to various thicknesses of 50, 70, 100 and 150 micron. High reduction ratio of 30% was applied down to 150 micron. Rolled texture was converted into cube texture via high temperature heat treatment at $400-800^{\circ}C$. Grain size of Cu was about 50 micron which is much smaller compared to >300 micron for the Cu prepared using smaller reduction pass of 5%. 1.5 km-long 150 micron Cu was fabricated with a rolling speed of 33 m/min and texture of Cu was uniform along length. Abnormal grain growth and non-cube texture appeared for the specimen anneal above $900^{\circ}C$. 1-10 micron thick Ni and Ni-W film was electroplated onto an annealed cube-textured Cu or directly on a cold rolled Cu. Both specimens were annealed and the degree of texture was measured. For electroplating of Ni on annealed Cu, Ni layer duplicated the cube-texture of Cu substrate and the FWHM of in plane XRD measurement for annealed Cu layer and electroplated layer was $9.9^{\circ}\;and\;13.4^{\irc}$, respectively. But the FWHM of in plane XRD measurement of the specimen which electroplated Ni directly on cold rolled Cu was $8.6^{\circ}$, which is better texture than that of nickel electroplated on annealed Cu and it might be caused by the suppression of secondary recrystallization and abnormal grain growth of Cu at high temperature above $900^{\circ}C$ by electroplated nickel.

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Fabrication method of persistent mode superconducting coils using tailored coated conductor (영구전류모드 운전을 위한 coated conductor의 가공 및 자석 제조)

  • Lee, Hee-Gyoun;Kim, Jae-Geun;Lee, Sun-Wang;Kim, Woo-Seok;Lee, Seung-Wook;Choi, Kyung-Dal;Hong, Gye-Won;Ko, Tae-Kuk
    • Progress in Superconductivity
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    • v.7 no.2
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    • pp.167-173
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    • 2006
  • Coated conductors suitable for the fabrication of persistent mode high $T_c$ magnets are suggested and the fabrication method of persistent mode magnets using coated conductor are demonstrated. Persistent current was observed in a small piece of coated conductor. Closed loop of coated conductor with a diameter of around 1 em was successfully prepared and was cooled with a magnetic field of about 500 Gauss in order to induce supercurrent. Coated conductor with a $I_c$ of 100 A/cm-width was used for the preparation of closed loop of coated conductor. Persistent current was confirmed by measuring the magnetic field generated from closed loop of coated conductor by using Gauss meter. Magnetic field of 4.4 Gauss was detected from the supercurrent of closed loop of coated conductor. It shows that superconducting joint of coated conductor is not a prerequisite for the construction of persistent mode magnets. It is thought that this work opens the possibility to use coated conductor for the construction of persistent mode high $T_c$ magnets for MRI, NMR and magnetic separation applications.

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Detection of 10-GHz Optical Single-/Double-Sideband Labels Using Fiber-Optic Interleavers (광섬유 인터리버를 이용한 10-GHz 광 단측파대/양측파대 레이블 검출)

  • Park, Kyoung-Deuk;Shin, Jong-Dug;Kim, Boo-Gyoun
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.32 no.7C
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    • pp.652-657
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    • 2007
  • Optical subcarrier-multiplexed (OSCM) labels in optical label switching networks have been detected using interleavers composed of fiber-optic Mach-Zehnder interferometer. 10-GHz optical single-/double-sideband signals generated from dual-electrode Mach-Zehnder intensity modulator have been used as the OSCM labels. In the case of single-sideband signals, the upper-sideband was observed to be suppressed about 16.8 dB compared with the lower-sideband from the optical spectrum measured at the label extraction output. For the case of double-sideband signals, both sidebands appeared with small insertion loss at the interleaver output. Since we used the phase-shift method to generate single-sideband signals, the power level of the single-sideband was higher by 3 dB than that of the double-sidebands.

Analysis of Self-Pulsation Characteristics in Multi-Section Complex-Coupled DFB Lasers With Amplifying Optical Feedback (증폭된 광 귀환을 가자는 다중 전극 복소 결합 DFB 레이저에서 발생되는 self-pulsation 특성 해석)

  • Kim, Sang-Taek;Kim, Tae-Young;Kim, Boo-Gyoun;Leem, Young-Ahn;Park, Kyung-Hyun
    • Korean Journal of Optics and Photonics
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    • v.16 no.6
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    • pp.527-534
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    • 2005
  • We investigate the pulsation characteristics in a multi-section DFB laser which is composed of one DFB section, phase tuning section, and gain section. Multi-section DFB lasers with anti-phase (AP) complex-coupled (CC) DFB structure show wide current ranges of gain and phase tuning sections fer stable pulsations compared to those with in-phase CC DFB structure or index-coupled DFB structure. For multi-section DFB lasers with AP CC DFB structure, the current range of a gain section for stable pulsations increases and the tuning range of the pulsation frequency increases as a coupling strength or a gain coupling coefficient increases Also, the tuning range using the phase variation in a phase tuning section increases. For a fixed coupling strength, the current ranges of gain and phase tuning sections for stable pulsations increase and the tuning range of the pulsation frequency increases as the length of a DFB section increases.

Effect of Gain Dispersion on the Characteristics of Self-Pulsation in a Multisection Complex-Coupled DFB Laser (이득 분산이 다중 영역 복소 결합 DFB 레이저의 Self-Pulsation 특성에 미치는 효과)

  • Kim, Tae-Young;Kim, Boo-Gyoun
    • Korean Journal of Optics and Photonics
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    • v.18 no.1
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    • pp.56-65
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    • 2007
  • The effect of gain dispersion on the self-pulsation (SP) characteristics due to the mode beating of two modes emitted in a multisection DFB laser composed of two complex-coupled DFB sections and a phase control section is investigated. When the peak wavelength, ${\lambda}_{p}$, of the gain spectrum of the DFB section is positioned in the center of the lasing wavelengths or the Bragg wavelengths of the two DFB sections, the maximum SP frequencies are higher and the modulation index has better characteristics compared to those cases for ${\lambda}_{p}$ fixed at the lasing wavelength or Bragg wavelength of one DFB section, when the difference between the Bragg wavelengths of the two DFB sections, ${\Dalta}{\lambda}_{B}$, is varied. When ${\lambda}_{p}$ is positioned in the renter of the Bragg wavelengths of the two DFB sections, the maximum SP frequency is higher and of the modulation index has better characteristics compared to those of the case for ${\lambda}_{p}$ positioned in the center of the lasing wavelengths of the two DFB sections.

LS-MOCVD OF BARIUM STRONTIUM TITANATE THIN FILMS USING NOVEL PRECURSORS

  • Kwon, Hyun-Goo;Oh, Young-Woo;Park, Jung-Woo;Lee, Young-Kuk;Kim, Chang-Gyoun;Kim, Do-Jin;Kim, Yunsoo
    • Proceedings of the Korea Crystallographic Association Conference
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    • 2002.11a
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    • pp.19-19
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    • 2002
  • Perovskite-type titanate dielectrics have attracted much attention in memory devices such as DRAMs or FeRAMs due to their high dielectric constants. However, low volatility of the Ba, Sr, Pb or Zr precursors with only thd ligands has limitations in obtaining high quality thin films by liquid source metal organic chemical vapor deposition (LS-MOCVD) processes. To improve the volatility of these precursors, many attempts have been made such as adding polyether ligands to satisfy the coordinative saturation. We report the synthesis of new precursors Ba(thd)₂(tmeea) and Sr(thd)₂(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amino, and LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Due to increased basicity of amines compared with ethers, it is expected that the nitrogen-donor ligand will make a strong bond to a metal than an analogous oxygen-donor ligand, consequently improving the volatility and thermal behavior of these precursors. Thin films of BSTO were grown on Pt(111)/SiO₂/Si(100) substrates by LS-MOCVD using a cocktail source consisting of the conventional Ti precursor Ti(thd)₂(O/sup i/Pr), and these new Ba and Sr precursors. As-grown films were characterized by XPS, SEM, XRD, XRF, and C-V and I-V measurements. BSTO films grown at 420℃ were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as targe as 450. Dependence of the composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, working pressure, and the composition of the cocktail source will be discussed.

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Effect of a Finite Square Substrate Plane on the Radiation Characteristics of a Microstrip Patch Antenna (유한한 정사각형 기판의 크기가 마이크로스트립 패치 안테나의 방사 특성에 미치는 영향)

  • Park, Jae-Woo;Kim, Tae-Young;Kim, Boo-Gyoun;Shin, Jong-Dug
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.2
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    • pp.114-125
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    • 2009
  • Effect of a finite square substrate plane on the radiation characteristics of a microstrip patch antenna is investigated. Effect of a finite square substrate plane on the resonance frequency and bandwidth is very small, while that on the radiation pattern is very large. The gain of front radiation and the direction of the maximum gain vary almost periodically with the length of a square substrate plane. The length of a square substrate plane for the maximum gam and the minimum gain of front radiation decrease as the electrical thickness of a substrate increases. The variation of the gain of front radiation with the length of a square substrate plane increases as the electrical thickness of a substrate increases. The variation of the radiation pattern with the length of a square substrate plane is almost determined by the electrical thickness of a substrate.