• International Journal of Concrete Structures and Materials
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• v.6 no.2
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• pp.79-85
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• 2012

This paper presents the differences in growth of time-dependent strain values in reinforced cement concrete (RCC) and pre-stressed concrete (PSC) flexural members through experiment. It was observed that at any particular age, the time-dependent strain values were less in RCC beams than in PSC beams of identical size and grade of concrete. Variables considered in the study were percentage area of reinforcement, span of members for RCC beams and eccentricity of applied pre-stress force for PSC beams. In RCC beams the time-dependent strain values increases with reduction in percentage area of reinforcement and in PSC beams eccentricity directly influences the growth of time-dependent strain. With increase in age, a non-uniform strain develops across the depth of beams which influence the growth of concave curvature in RCC beams and convex curvature in PSC beams. The experimentally obtained strain values were compared with predicted strain values of similar size and grade of plane concrete (PC) beam using ACI 318 Model Code and found more than RCC beams but less than PSC beams.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.474-480
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• 2009

We have investigated optical properties of InAs quantum dots (QDs) grown on GaAs (100) substrate by molecular beam epitaxy, by means of photoluminescence (PL) and time-resolved PL spectroscopy. InAs QDs were grown by using In interruption growth technique, in which the In flux was periodically interrupted by a closed In shutter during InAs QDs growth. The shutter of In source was opened for 1 s and then closed for 0, 9, 19, 29, or 39 s. This growth sequence was repeated 30 times during QDs growth. For each sample, the total amount of In contributing to the growth was the same (30 s) but total growth time was varied during the InAs growth. As the In interruption time is increased from 0 to 19 s, the PL peak position of the QDs is red-shifted from 1096 to 1198 nm, and the PL intensity is increased. However, the PL peak is unchanged and the intensity is decreased as the In interruption time is increased further to 39 s. The PL decay times measured at the PL peak position for all the InAs QDs are independent on the QD growth conditions and showed about 1 ns. The red-shift of PL peak and the increase of PL intensity can be explained due to increased QD size and the enhancement in the migration of In atoms using In interruption technique. These results indicated that the size and shape of InAs QDs can be controlled by using In interruption growth technique. Thus the emission wavelength of the InAs QDs on GaAs substrate can also be controlled.

• Asia pacific journal of information systems
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• v.16 no.2
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• pp.111-122
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• 2006

This paper investigated the causal relationship between IT investment and economic performance with the office, computing and accounting machinery (OCAM) and gross domestic product (GDP) statistics from the United States for the period 1961 to 2001. Due to non-stationary aspects of the series, found by unit root tests, it was deemed applicable to apply growth models using the first difference of the series. The results indicate that IT investment growth at the country level do not only cause economic performance growth, but are also caused by economic performance growth. While IT investment growth affect economic performance growth over shorter time periods, economic performance growth affect IT investment growth over longer time periods. As a result, this study reveals IT investment growth have the preceding effect on economic performance growth, and then economic performance growth impact subsequently on IT investment growth.

• Journal of environmental and Sanitary engineering
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• v.16 no.3
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• pp.34-41
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• 2001

It is well known that bioassay on the low organic matters in water have developed from the two methods. One is assimilable organic carbon(AOC) that makes use of the maximum growth biomass of the pure strains for the standard substrates, the other is biodegradable dissolved organic carbon(BDOC) that determines the fraction of dissolved organic carbon(DOC) available for microbial utilization. The purpose of this study was to upgrade the measurement method of BDOC in natural water or drinking water. BBOC was determined by means of the bacterial growth and the DOC decrease at the same time. The origin inoculums were used to the suspended bacteria from Han River water, The initial optimum biomass and incubation time for initial DOC were induced by variation of nutrient repression and inoculums. The time reached to minimum DOC was selected as incubation time. The initial optimum biomass for Han river water was about 1000~5000 CFU/mL, respectively. In a sufficient biomass, suitable incubation time was about 3~5 day. It was indirectly calculated BDOC on maximum growth rate by measuring growth yield of indigenous bacteria. But it was difficult to adapt growth yield coefficient because of irregular bacterial growth. The measured 3 day BDOC was close to BDOC calculated with our proposed experimental equation between DOC and BDOC. It shows that the quantification of BDOC with this experimental equation can be used indirectly.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.232-235
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• 2011

ZnO nanorods for gas sensors were prepared by a hydrothermal method. The ZnO gas sensors were fabricated on alumina substrates by a screen printing method. The gas-sensing properties of the ZnO nanorods were investigated for $CH_4$ gas. The effects of growth time on the structural and morphological properties of the ZnO nanorods were investigated by X-ray diffraction and scanning electron microscope. The XRD patterns of the nanocrystallized ZnO nanorods showed a wurtzite structure with the (002) predominant orientation. The diameter and length of the ZnO nanorods increased in proportion to the growth time. The sensitivity of the ZnO sensors to 5 ppm $CH_4$ gas was investigated for various growth times. The ZnO sensors exhibited good sensitivity and rapid response-recovery characteristics to $CH_4$ gas, and both traits were dependent on the growth time. The highest sensitivity of the ZnO sensors to $CH_4$ gas was observed with the growth time of 7 h. The response and recovery times were 13 s and 6 s, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.418-418
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• 2009

Vertically aligned arrays of multi-walled carbon nanotube (MWCNT) on layered Si substrates have been synthesized by water-assisted thermal chemical vapor deposition (CVD). We studied changes in growth by parameters of growth temperature, growth time, rates of gas and annealing time of catalyst. Also, We grew CNTs by adding a little amount of water vapor to enhance the growth of CNTs. $H_2$, Ar, and $C_2H_2$ were used as carrier gas and feedstock, respectively. Before growth, Fe served as catalyst, underneath which AI were coated as an underlayer and a diffusion barrier, respectively, on the Si substrate. The water vapor had a greater effect on the growth of CNTs on a smaller thickness of catalyst. When the water vapor was introduced, the growth of CNTs was enhanced than without water. CNTs grew 1.29 mm for 10 min long by adding the water vapor, while CNTs were 0.73 mm long without water vapor for the same period of time. CNTs grew up to 1.97 mm for 30 min prior to growth termination under adding water vapor. As-grown CNTs were characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and Raman spectroscopy.

• Korean Journal of Medicinal Crop Science
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• v.14 no.1
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• pp.19-22
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• 2006

Planting of peony, a perennial herb is usually planted in fall but the planting time can be postponed to next spring for other benefit such as land use, labour diversification and etc. This study was carried out to know the effect of planting time in spring on growth and yield of peony. Sprouting date in first year growth was earlier as planting time was later. Planting on March 10 showed best both top part and root growth and planting after that time resulted in worse growth. In planting on April 10, missing plant rate was 24% and accordingly root yield decreased to 43% comparing with that of March 10. Planting on March 10 resulted in thick and large number of root and so yield per l0a was 635 kg, the highest value among the other planting time in spring. The paeoniflorin content was not different significantly by planting time. These results suggested that March 10 was most appropriate for planting time in spring.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.5 s.236
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• pp.633-642
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• 2005

Nucleate pool boiling experiments for R11 under a constant wall temperature condition were carried out. A microscale heater array was used for the heating and the measurement of high temporal and spatial resolution by the Wheatstone bridge circuit. Very sensitive heat flow rate data were obtained by the control for the surface condition with high time resolution. The measured heat flow rate shows a discernable peak at the initial growth stage and reaches an almost constant value. In the thermal growth region, bubble shows a growth proportional to $t^{\frac{1}{5}}$. The bubble growth behavior is analyzed with a dimensionless parameter to compare with the previous results in the same scale. As the wall superheat increases, the departure diameter and the departure time increase, and the waiting time decreases. But the asymptotic growth rate is not affected by the wall superheat change. The effect of the wall superheat is resolved into the suggested growth equation. Dimensionless parameters of time and bubble radius characterize the thermal growth behavior well, irrespective of wall condition. The comparison between the result of this study and the previous results shows a good agreement at the thermal growth region. The quantitative analysis for the heat transfer mechanism is conducted with the measured heat flow rate behavior and the bubble growth behavior. The required heat flow rate for the volume change of the observed bubble is about twice as much as the instantaneous heat flow rate supplied from the wall.

• Research in Plant Disease
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• v.10 no.1
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• pp.48-52
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• 2004

We investigated the effect of infection time of CGMMV on the growth and quality of watermelon and cucumber plants. The effect (damages by CGMMV) was estimated on the watermelon where CGMMV had been inoculated at different growth stages, vegetative (transplanting stage, vegetative growth stage) and reproductive growth stage (fruiting stage and fruit hypertrophy stage). In the case of cucumber, CGMMV was inoculated at transplanting stage and Erst flowering stage, respectively. When watermelon was infected with CGMMV at vegetative growth stage, vine length, internode length, leaf area, and fruit weight of the plants largely decreased compared with control plants, while the infected plant growth was not very different from control plants when it was infected at reproductive growth stage. Brix of the fruit of watermelon also decreased when the plants was infected with the virus earlier than fruiting stage. The occurrence of 'Pisubag', internal discoloration and decomposition of watermelon fruits, tended to be increased as earlier infection time with CGMMV In the case of cucumber infection time with CGMMV did not influence earlier growth of the plants, but did later growth showing that plant height, vine length, internode length, number of leaf, leaf wide, and leaf length of the plants decreased as infection time became to be earlier.