• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.61-65
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• 2024

HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N₂) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.228-236
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• 2009

In this study, we investigated morphological characteristics of $SF_6$ clathrate hydrate crystals to understand its formation and growth mechanism. $SF_6$ clathrate hydrate crystals were formed in high-pressure reaction cell charged with pure water and $SF_6$ gas at constant pressure and temperature. Two-phase ($SF_6$ gas/aqueous solution) and three-phase ($SF_6$ gas/aqueous solution/$SF_6$ liquid) conditions were investigated, In both conditions, dendritic shape hydrate crystals were grown as like fibriform crystals along upward growth direction at the gas/aqueous solution interface. In the case of the reaction process of three-phase condition, when the $SF_6$ gas bubbles which were generated in $SF_6$ liquid phase due to the reduction of reaction cell pressure stuck to the gas/aqueous interfaces, the hydrate phase were appeared at the surface of the bubbles. This paper presents the detail growth characteristics of $SF_6$ hydrate crystals including crystal nucleation, migration, growth and interference.

• Animal Bioscience
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• v.35 no.3
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• pp.385-398
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• 2022

Objective: The objective was to evaluate the influence of different dietary crude protein (CP) levels during the growth phase on reproductive characteristics and reproductive efficiency as well as the body development of adult male Japanese quail. Methods: Three hundred one-day-old male quails were distributed into five treatments with diets containing different CP levels (18%, 20%, 22%, 24%, and 26%) in a completely randomized design, with six replicates of ten birds each. The CP diets were applied only during the growth phase (1 to 35 days). At 36 days of age, the birds were transferred to 30 laying cages with three males and nine females each, and all birds received the same diet formulated to meet production-phase requirements until 96 days of age. Results: The growth rate of the birds increased linearly (p<0.01) with increasing dietary CP, but the age of maximum growth decreased (p<0.05). At growth maturity, all birds had the same body weight (p>0.05). At 35 days of age, higher weight gain was obtained (p<0.05) with diets containing 22% CP or higher. No effects on feed conversion were observed in this phase. The increase in dietary CP enhanced (p<0.01) nitrogen intake and nitrogen excretion but did not affect (p>0.05) nitrogen retention. Testis size, seminiferous tubular area, number of spermatogonia, and germinal epithelial height at 35 days of age increased linearly (p<0.05) with dietary CP, while the number of Leydig cells decreased (p<0.01). The Sertoli cell number at 60 days of age increased linearly (p<0.01) with dietary CP. Dietary CP levels did not affect cloacal gland size, foam weight, foam protein concentration, semen volume, or flock fertility at 90 days of age. Conclusion: Dietary CP concentration affected body and testicular development in male Japanese quails but did not affect reproductive efficiency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.388-395
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• 1998

This paper reports on a thermodynamic analysis for the GaN thick film growth by vapor phase epitaxy method. The thermodynamic calculation was performed using a chemical stoichiometric algorism. The simulation variables include the growth temperature in a range 400~1500 K, the gas ratios $(GaCl_3)/(GaCl_3+NH_3)$ and $(N_2)/(GaCl_3+NH_3)$. The theoretical calculation predicts that the growth temperature of GaN be in the lower range of 450~750 K than the experimental results. The difference in the growth temperature between the simulation and the experiments indicates that the vapor phase epitaxy of GaN is kinetically limited, presumably, due to the high activation energy of thin film growth.

• KSBB Journal
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• v.4 no.3
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• pp.271-275
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• 1989

Batch growth of plant cell suspension cultures of Thalictrum rugosum was studied to clarify the kinetic behaviors. It was found that the product formation was growth associated. The specific growth rate was $0.20-0.25\;day\;^{-1}$/TEX> at the growth phase and the FW/DCW ratio was an interesting parameter which represented the status of the cells or the status of sugar concentration. The cell yield was 0.36 g cells/g sugar. The maximum berberine level was 139 mg/L of which 120 mg/L was intracellular. In terms of the specific content of berberine, the product was 1.10% of dry cell weight. At the growth phase, the relationship between the specific growth rate and sugar concentration was described well by Monod kinetics.

• Journal of Digital Convergence
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• v.12 no.10
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• pp.1-20
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• 2014

For the most domestic small and medium sized enterprises, having found no solution of the growth. For most companies do overcome stagnation phenomenon in the growth phase, stratagy of the technical innovation is very important. In this paper, we will study the concept of growing pains and stagnation cause of domestic small and medium sized enterprises. Through this, classifying small and medium sized enterprises growing step and find out the factors that to lead technical innovation for growth. we suggest plan for stratagy to continue the growth of small enterprises to mid-sized enterprises a standpoint of the technical innovation at each growth step.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.573-573
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• 2012

High quality $VO_2$ thin films were successfully grown on GaN substrate by optimizing oxygen partial pressure during the growth using RF sputtering technique. The $VO_2$ thin film grown on GaN substrate exhibited an unusual metal insulator transition behavior, which was known to be observed only either in doped sample or under uniaxial stress. Raman spectra also confirmed that metal insulator transition occurred from monoclinic M1 to rutile R phase via monoclinic M2 phase with increasing temperature. We believe that large lattice mismatch between $VO_2$ and GaN substrate may cause M2 phase to be thermodynamically stable. Optical transmittance and its electrical switching behavior were carefully investigated to elucidate the underlying physics of its metal insulator transition behavior. This study may lead to a unique opportunity to better understand the growth mechanism of M2 phase dominant $VO_2$ thin films.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.553-560
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• 1997

A fine $\alpha$-Al2O3 powder was prepared by sol-gel process for membrane application. And it was carried out by adding 1.5wt% $\alpha$-Al2O3 powders(mean size : 87 nm) as seeds to the prepared sols and by controlling the heating schedule (the heating rate and the soaking time) to prevent the microstructural change, which occured during $\theta$-to $\alpha$Al2O3 phase transformation. The seeded $\alpha$-Al2O3 particles acted as the heterogeneous nucleation sites for the $\alpha$-Al2O3 nucleation during the transformation of $\theta$- to $\alpha$-Al2O3 and resulted in increasing the driving force of phase transformation to activate the formation of $\alpha$-Al2O3 phase at 82$0^{\circ}C$. By $\alpha$-Al2O3 seeding and controlling of heating condition the phase transformation of $\theta$- to $\alpha$-Al2O3 was accomplished at low temperature and the grain growth process was depressed. Therefore, the unsupported membrane could be fabricated in $\alpha$-Al2O3 . The average diameter of pores in the fabricated membrane was 7 nm and the porosity was 47%.

• STI Policy Review
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• v.1 no.1
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• pp.93-109
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• 2010

Over the last decade, some Korean enterprises have emerged to become global players in their specialized products. How have they achieved such tremendous technological progress in a short period of time? This paper explores that question by examining the characteristics of technological innovation activities at major Korean enterprises. The paper begins with a brief review of the stages of economic growth and science and technology development in Korea. Then, the existing literature, explaining the Korean innovation model, is analyzed in order to establish a new framework for the Korean innovation model. Specifically, Korean firms have experienced three sequential phases, and thus, the Korean model, at the firm level, can be coined as "path-following," "path-revealing," and "path-creating." Then, the stylized facts in the first phase (path-following) and the second phase (path-revealing) are discussed, in the context of empirical evidence from the areas of memory chips, automobiles, shipbuilding, and steel. In terms of technology development, the Korean model has evolved as "collective learning" in the first phase, "collective recombination" of existing knowledge and technology in the second phase, and is assumed as "collective creativity" in the third phase. Ultimately, all three can be classified as "collective creation". Korean firms now face a transition in the modes of technological innovation in order to efficiently implement the third phase. To achieve remarkable progress again, as they did in the past, and to sustain the growth momentum, Korean firms should challenge new dimensions such as creative technological ideas, distinctive technological capabilities, and unique innovation systems -- all of which connote 'uniqueness'. Finally, some lessons from the Korean technological innovation experience are addressed.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.955-961
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• 1993

Sintering behavior and microstructure development in the system ZnO-Bi2O3-CoO-Zn7Sb2O12 with Zn7Sb2O12 content(0.1mol%~2mol%) were studied. The pyrochlore phase was formed by the reaction of the Zn7Sb2O12 with Bi2O3 phase during heating (below 90$0^{\circ}C$). The formation temperature of the liquid phase (Bi2O3) was dependent on the Zn7Sb2O12 contents (about 74$0^{\circ}C$ for Bi2O3/Zn7Sb2O12>1 by the eutectic melting in the ZnOBi2O3 system, and about 110$0^{\circ}C$ for Bi2O3/Zn7Sb2O12 1 by the decomposition of pyrochlore phase). Hence, sintering behavior and microstructure development were determined virtually by the Bi2O3/Zn7Sb2O12 ratio, which were promoted by liquid (Bi2O3) phase and retarded by the pyrochlore (or spinel) phase. The grain growth of ZnO during sintering was sluggish with increasing Zn7Sb2O12 contents.