• Food Science of Animal Resources
• /
• v.40 no.6
• /
• pp.938-945
• /
• 2020

A dynamic model was developed to predict the Escherichia coli cell counts in pig trotters at changing temperatures. Five-strain mixture of pathogenic E. coli at 4 Log CFU/g were inoculated to cooked pig trotter samples. The samples were stored at 10℃, 20℃, and 25℃. The cell count data was analyzed with the Baranyi model to compute the maximum specific growth rate (μ_max) (Log CFU/g/h) and lag phase duration (LPD) (h). The kinetic parameters were analyzed using a polynomial equation, and a dynamic model was developed using the kinetic models. The model performance was evaluated using the accuracy factor (A_f), bias factor (B_f), and root mean square error (RMSE). E. coli cell counts increased (p<0.05) in pig trotter samples at all storage temperatures (10℃-25℃). LPD decreased (p<0.05) and μ_max increased (p<0.05) as storage temperature increased. In addition, the value of h₀ was similar at 10℃ and 20℃, implying that the physiological state was similar between 10℃ and 20℃. The secondary models used were appropriate to evaluate the effect of storage temperature on LPD and μ_max. The developed kinetic models showed good performance with RMSE of 0.618, B_f of 1.02, and A_f of 1.08. Also, performance of the dynamic model was appropriate. Thus, the developed dynamic model in this study can be applied to describe the kinetic behavior of E. coli in cooked pig trotters during storage.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.5
• /
• pp.1541-1546
• /
• 2012

The early stages of bismuth (Bi) electrodeposition on glass carbon electrode from alkaline electrolyte were studied by cyclic voltammetry, chronoamperometry, scanning electron microscopy, atomic force microscopy and X-ray diffraction. The CV analysis showed that the electrodeposition of Bi was determined to be quasireversible process with diffusion controlled. The current transients for Bi electrodeposition were analyzed according to the Scharifker-Hills model and the Heerman-Tarallo model. It can be concluded that the nucleation and growth mechanism was carried out under a 3D instantaneous nucleation, which was confirmed by SEM analysis. The kinetic growth parameters were obtained through a nonlinear fitting. In addition, the Bi film obtaining at -0.86 V for 1 hour was of compact and uniform surface with good smoothness, small roughness and a very high purity. The Bi film were indexed to rhombohedral crystal structure with preferred orientation of (0 1 2) planes to growth.

• Journal of Industrial Technology
• /
• v.3
• /
• pp.33-38
• /
• 1983

The effect of various environmental conditions on the growth kinetics of Zymomonas mobilis were studied and the kinetic parameters were evaluated. The value of ${\mu}m$ was $0.45hr^{-1}$ and Ks was 0.23 g/L. Inhibition of growth at high glucose concentration was found to follow the threshold substrate inhibition. Threshold substrate concentration was 102 g/L and substrate inhibition constant was 196 g/L. The effects of yeast extract concentrations were found to follow the Monod equation. ${\mu}m$ value was $0.45hr^{-1}$ and Ks was 0.3 g/L at 20 g/L of glucose and $0.24hr^{-1}$ and 0.24 g/L respectively at 200 g/L of glucose. The optimum temperature was found to be $35^{\circ}C$ and the activation energy of growth was 7.7 Kcal/mole below $35^{\circ}C$ and -29 Kcal/mole above $35^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.433-433
• /
• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Food Science of Animal Resources
• /
• v.30 no.5
• /
• pp.730-738
• /
• 2010

We developed predictive growth models for Staphylococcus aureus and Bacillus cereus on various food matrices consisting primarily of ready-to-eat (RTE) foods. A cocktail of three S. aureus strains, producing enterotoxins A, C, and D, or a B. cereus strain, were inoculated on sliced bread, cooked rice, boiled Chinese noodles, boiled bean sprouts, tofu, baked fish, smoked chicken, and baked hamburger patties at an initial concentration of 3 log CFU/g and stored at 8, 10, 13, 17, 24, and $30^{\circ}C$. Growth kinetic parameters were determined by the Gompertz equation. The square-root and Davey models were used to determine specific growth rate and lag time values, respectively, as a function of temperature. Model performance was evaluated based on bias and accuracy factors. S. aureus and B. cereus growth were most delayed on sliced bread. Overall, S. aureus growth was significantly (p<0.05) more rapid on animal protein foods than carbohydrate-based foods and vegetable protein foods. The fastest growth of S. aureus was observed on smoked chicken. B. cereus growth was not observed at 8 and $10^{\circ}C$. B. cereus growth was significantly (p<0.05) more rapid on vegetable protein foods than on carbohydrate-based foods. The secondary models developed in this study showed suitable performance for predicting the growth of S. aureus and B. cereus on various food matrices consisting of RTE foods.

• KSBB Journal
• /
• v.21 no.1 s.96
• /
• pp.49-53
• /
• 2006

The aim of this research is to estimate the values of biological kinetic parameters of pharmaceutical wastewater for understanding biochemical properties. Maximum specific growth rate (${\mu}m$), yield coefficient (Y), and half-velocity coefficient (KS) were determined using oxygen uptake rate (OUR), and the results were 10.49/day (0.437/hr), 0.655, and 38.89 mg/L, respectively. Measured ${\mu}max$ by nonlinear regression of Monod equation was 10.63/day (or 0.443/hr), and this value was similar with above result. These parameters may be used to increase efficiency of pharmaceutical wastewater treatment and to determine amount of oxygen needed to removal BOD and dissolved oxygen in activated sludge process.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.5-18
• /
• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Proceedings of the Korean Society for Emotion and Sensibility Conference
• /
• 2000.11a
• /
• pp.91-97
• /
• 2000

The conventional model did not take momentum conservation into consideration when the electron absorbs and emits the photons. II-ray provides momentum conservations on any directions of the entering photons, and also the electrons have radial momentum conservations and fully elastic bouncing between two atoms, in the new atom model. Conventional atom model must be criticized on the following four points. (1) Natural motions between positive and negative entities are not circular motions but linear going and returning ones, for examples sexual motion, tidal motion, day and night etc. Because the radius of hydrogen atom's electron orbit is the order of 10$^{-11}$ m and the radia of the nucleons in the nucleus are the order of 10$^{-l4}$m and then the converging n-gamma rays to the nucleus have so great circular momentum, the electron can not have a circular motion. We can say without doubt that any elementary mass particle can have only linear motion because of the n-rays' hindrances, near the nucleus. (2) Potential energy generation was neglected when electron changes its orbit from outer one to inner one. The h v is the kinetic energy of the photo-electron. The total energy difference between orbits comprises kinetic and potential energies. (3) The structure of the space must be taken into consideration because the properties of the electron do not change during the transition from outer orbit to inner one even though it produces photon. (4) Total energy conservation law applies to the energy flow between mind and matter because we daily experiences a interconnection between mind and body. An understanding of the mechanisms responsible for the control of normal proliferation and differentiation of the various cell types which make up the human body will undoubtedly allow a greater insight into the abnormal growth of cells, A large body of biochemical evidence was eventually used to generate a receptor model with an external ligand binding domain linked through a single trans-membrane domain to the cytoplasmic tyrosine kinase and autophosphory-lation domains. The ligand induced conformational change in the external domain generates either a push-pull or rotational signal which is transduced from the outside to the inside of cell.l.ell.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1997.10a
• /
• pp.149-154
• /
• 1997

광소자 및 새로운 개념의 전력소자 응용을 위하여 Wide Bandgap 반도체에 대한 관심이 급증되고 있다. 특히 직접천이형인 GaN는 청색 발광소자 응용 및 고출력, 고주파용 전력소자 응용에 이상적인 전자물성을 갖고 있다. 따라서 본 연구에서는 GaCl$_3$와 NH$_3$를 source gas로 하는 CVPE법을 사용하여 (0001) sapphire와 비교하였다. 기판의 증착온도 104$0^{\circ}C$에서 source gas의 III/V flow rate를 2로 분석하여 45분간 성장시킨 경우 그 증착속도는 약 40 $\mu\textrm{m}$/hr 정도였으며, 이 때 XRD을 향상시키기 위하여 증착이전에 기판의 표면에 증착온도에서 NH$_3$를 이용한 nitridation 처리를 하였으며, 그 처리시간이 3분일 때 XRD의 FWHM 특성이 가하여 조사한 결과 363 nm에서 peak가 검출되었다. 본 연구에서는 양질의 GaN 박막성장을 위한 증착조건 인자중 source gas의 flow rate가 가장 중요한 변수임을 적정 온도 범위가 75$0^{\circ}C$ 근처로 조사되었다. 실험과 모사결과의 박막 증착 최적온도의 차이는 GaN 증착시의 반응 Kinetics가 느리기 때문인 것으로 해석된다.

• KSBB Journal
• /
• v.16 no.3
• /
• pp.307-313
• /
• 2001

The effects of agitaion and aeration on mycelial growth, exo-polysaccharide (EPS) production, and substrate consumption upon the submerged cultivation of G. lucidum were investigated, and the batch kinetics of the EPS fermentation of G. lucidum were interpreted as function of agitation speed and aeration rate. In a 2.6 L jar fermenter system, the optimum agitation speed and aeration rate for EPS production were determined to be 400 rpm and 1.0 vvm, respectively. The maximum production of EPS obtained was 15 g/L. The logistic model for mycelial growth fitted the experimental data better than that determined by the Monod and the two-thirds power models. The Luedeking-Piret equation adequately modelled the kinetic data obtained for product and substrate.