• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• 제34권6호
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• pp.616-621
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• 2008

Osseointegration is a result of bone formation and bone regeneration processes, which takes place at the interface between bone and implant, and it indicates a rigid fixation that can be stably maintained while functional loading is applied inside the oral cavity as well as after implant placement. Although many researches were carried out about osseointegration mechanism, but cellular and molecular events have not been clarified. With recent development of molecular biology, some researches have examined biological determinants, such as cytokine, growth factors, bone matrix proteins, during osseointegration between bone and implant surface, other researches attempted to study the ways to increase bone formation by adhering protein to implant surface or by inserting growth factors during implant placement. Cellular research on the reaction of osteoblast especially to surface morphology (e.g. increased roughness) has been carried out and found that the surface roughness of titanium implant affects the growth of osteoblast, cytokine formation and mineralization. While molecular biological research in dental implant is burgeoning. Yet, its results are insignificant. We have been studying the roles of growth factors during osseointegration, comparing different manifestations of growth factors by studying the effect of osseointegration that varied by implant surface. Of many growth factors, $TGF-{\beta}$, IGF-I, BMP2, and BMP4, which plays a significant role in bone formation, were selected, and examined if these growth factors are manifested during osseointegration. The purpose of this article is to present result of our researches and encourage molecular researches in dental implant.

• 한국재료학회지
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• 제7권1호
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• pp.62-68
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• 1997

본 연구에서는 접초피로에 있어서 균열의 발생, 진전 등의 관찰을 위해, 균열의 발생, 진전 등이 2차원적으로 되어 시험편측면에서 관찰이 가능한 평판 ring형 시험편을 이용하여 반복수 증대에 따른 균열의 발생, 진전과정을 조사하였다. 그 결과 pitting, flaking형 파손의 초기손상은 접촉면하의 내부에 생기는 접촉면에 평행방향의 균열에 의해 일어나며, 이 균열은 그 방향 밀 파면형태에 의해 접촉응력이 접촉면에 평행방향의 전단응력성분에 의한 모드 ll 피로진전과의 차는 중첩부하된 압축응력의 유무라고 생각되며, 이 가저에 근거로 하여 재료고유의 모드 ll 피로균열진전특성을 구할 수 있는 장치를 개발하였다. 이 장치를 이용하여 알루미륨합금 및 공구강에 대한 da/dN-${\Delta}k$ ll 관계의 시험결과를 얻었다.

• 한국해양공학회지
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• 제7권2호
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• pp.173-181
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• 1993

This work has been investigated the ralationship between single surface crack length and crack depth have influence on the fatigue life. The simulation based on experimental results of 2.25 Cr-1Mo steel at various crack configuration ratios has enabled successful prediction of fatigue life at room temperature. The effect of crack depth should be considered for predicting fatigue crack growth rates as well as that of surface crack length. It is also shwn that the crack growth mechanisms are in good agreement with expreimental data according to the interaction of crack length and crack depth.

• 설비공학논문집
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• 제24권12호
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• pp.852-857
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• 2012

Recently, the indoor air pollution by microbes such as fungi and mites have become a concern as important research topic on indoor air quality. Fungal growth is significantly affected by humidity. In this study, we examined the influence of relative humidity on the surface of building materials and the water content of building materials on the fungal growth rate by measuring the mycelium length of fungi in the fungal detector placed on the surface of building materials. As a result, even if the relative humidity on the surface of building materials is identical, the more water content of building materials is, the more fungi grow faster. It was suggested that fungal growth rate depends on not only the relative humidity on the surface of building materials but also the water content of building materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.264.2-264.2
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• 2013

Molecular layer deposition (MLD) is sequential, self-limiting surface reaction to form conformal and ultrathin polymer film. This technique generally uses bifunctional precursors for stepwise sequential surface reaction and entirely organic polymer films. Also, in comparison with solution-based technique, because MLD is vapor-phase deposition based on ALD, it allows epitaxial growth of molecular layer on substrate and is especially good for surface reaction or coating of nanostructure such as nanopore, nanochannel, nanwire array and so on. In this study, polyurea film that consisted of phenylenediisocyanate and phenylenediamine was formed by MLD technique. In situ Fourier Transform Infrared (FTIR) measurement on high surface area SiO2 substrate was used to monitor the growth of polyurethane and polyurea film. Also, to investigate orientation of chemical bonding formed polymer film, plan-polarized grazing angle FTIR spectroscopy was used and it showed epitaxial growth and uniform orientation of chemical bones of polyurea films.

• 대한치과교정학회지
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• 제17권2호
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• pp.215-221
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• 1987

This study was designed to investigate the growth amount and rate of mandible by the measurements of mandibular lateral surface and the relationship of peak growth increments between mandible and body height The sample consisted of twenty-five boys and fifteen girls between the ages of 6 and 13 The surface of mandible was measured from digitized roentgenocephalometric analysis (A 27 point mandibular model) The findings of this study can be summarized as follows 1 No significant difference was found between mandibular lateral surfaces of the both sexes at the ages studied. 2 The mean growth amount of mandibular lateral surface from 6 to 13 years of ages was $9\;09cm^2$ in boys and $8\;29cm^2$ in girls, and the mean growth rate was 46 07% in boys and 42 57% in girls 3 The prepubertal peak growth increment in mandible was found between the ages of 11-12 in girls and 12-13 in boys 4 The prepubertal peak growth increments of mandible occured one year later that of body height in boys and girls.

• 한국결정학회지
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• 제5권2호
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• pp.93-99
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• 1994

K2O/3MOOS/0.SBB03 융제를 사용하여 TSSG 법으로 육성한 Md:Yal3(BO3)4 (NYAB) 단결정의 결정외형 및 표면형상을 연구하였다. <100>과 <120> 종자정을 사용한 경우는 서로 다른 크기의 프리즘 면들과 (101) 면들이 발달하였고 <001> 종자정을 사용하였을 때는 (001) 면이 함께 발달하였다. 종자정의 방향이 <100>또는 <120> 일때 프리즘 면 위에 성장구룽이 많이 형성되었으나, <001> 일때는 이웃하는 (101) 면에 평행한 줄무늬가 형성 되었다. (101) 면은 이차원 핵생성에 의한 성장이 지배적이고, <001> 종지정을 사용할 때 발달하는 (001) 면은 나선형 전위에 의한 성장이 지배적이었다. 종자정의 방향은 성장외형을 변화시키고 성장외형과 결정의 질을 결정하는 중요한 성장변수로 작용하였다.

• 한국표면공학회지
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• 제36권3호
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• pp.234-241
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• 2003

SiC nanorod was synthesized directly on Si substrate using hexamethyldisilabutane and Fe catalyst with (111) direction. Fe acted a liquid catalyst at growth condition. Grown SiC nanorod has about 30nm diameter and $5{\mu}m$ length. SiC nanorod growth was divided by trro regions with diameter distribution. This diameter distribution were occurred by surface deposition at as - grown nanorod's surface by limitation of growth rate. At higher temperature, these division not occurred. Growth temperature and flow rates affected diameter and morphology of nanorods. With increasing flow rate of source gas, nanorod's diameter increased because of deactivation effect. Case of the increasing temperature, growth rate increased so deactivation did not occurred.

• Journal of Advanced Marine Engineering and Technology
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• 제40권8호
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• pp.692-697
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• 2016

This study investigated the effect of surface roughness of zinc oxide (ZnO) layer on the growth of polycrystalline Si layer via an Al-induced layer exchange process. It was found that the growth rate, grain size, crystallization fraction, and preferential orientation of the polycrystalline Si layer were strongly influenced by the surface roughness of the underlying ZnO layer. As the roughness of the ZnO surface increased, a higher growth rate (~40 min) and preferential Si (100) orientation were obtained because of the spatial concentration fluctuations in the Al-Si alloy, induced by the surface roughness of the underlying ZnO layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.