• Korean Journal of Microbiology
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• v.3 no.2
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• pp.15-21
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• 1965

Using the synchronous culture method and the manometric technique, changes in respiratory activities, utilization of some organic acids (succinate, malate, lactate and acetate etc.) and its effect on glucose metabolism in Chlorella cells at different growing stages were measured. 1) Endogenous respiration of the cells was not active at growing stage and was almost constant throughout the early ripening, maturing and division stages. 2) Lactate was utilized as respiratory substrate better than other organic acids tested. Exogenous respiration of glucose was most active at growing and maturing stages and was decreased strikingly at division stage. 3) Succinate and citrate inhibited endogenous and glucose respiration of the cells throughout the all life cycle. 4) Malate and acetate were utilized in the cells at early growing and division stages better, and malate enhanced the glucose respiration while in case of acetate it was depressed. 5) Calcium ion inhibited not only permeability of respiratory substrate but endogenous respiration itself.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.277-277
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• 2010

In this report, we present a very effective growing method of graphene using plasma enhanced chemical vapor deposition(PECVD). The graphene is successfully grown on copper substrate. Low temperature growing is obtained with methane and hydrogen plasma. The graphene layers are analyzed by Raman spectroscopy and atomic force microscope. We also provide a transfer technique of graphene layer onto silicon substrate to build up various kinds of application devices.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1260-1261
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• 2008

Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.

• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.245-247
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• 2012

In this study, ZnO films have been grown on PES (polyethersulfone) of flexible polymer substrate by PLD (pulsed laser deposition) and characterized for crystalline and optical properties. Growing conditions were changed with substrate temperatures ranging from 50 to $200^{\circ}C$ and laser power density ranging from 0.2 to $0.4J/cm^2$. When ZnO thin films are deposited at low temperature with a small laser power density, the (002) peaks of XRD to signify the crystal quality of ZnO thin films appear to be very weak and the (101) peaks to signify the chemical composition of oxygen and zinc are strong. The (002) peaks increase with the substrate temperature and laser power density because the energy needed for the supply of the combination regarding zinc and oxygen has increased. In this study, the best condition for growing ZnO thin film on PES is at a substrate temperature of $200^{\circ}C$ and with a laser density of $0.3J/cm^2$. The characteristics of PL were measured by UV and green luminescence.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.2
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• pp.243-248
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• 1986

The impurities in As and Ga sources and the contamination of the GaAs substrate prior to growing of MBE GaAs epitaxial layer have been investigated using RHEED, AES and RGA methods. The as source was contaminated by H2O, CO, CO2 and AsO, and the Ga source was contaminated by H2, H2O, CO and CO2. These contaminants could easily be removed by prebaking the source. On the other hand, GaAs substrate was contaminated principally carbon and oxygen. The oxygen could easily be removed by heating the substrate above 480\ulcorner, and the carbon could also be reduced by sputtering the substrate with 1ke V Ar+. The chemically etched substrate surface prior to growing the layer was rough, but it was made to be smooth and clean by heating it above 530 \ulcorner.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.113-115
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• 2010

In this study, ZnO films have been grown on PES(polyethersu]fone) substrate by PLD(pulsed laser deposition) and characterized as a change of laser density and substrate temperature. Growing conditions were changed with substrate temperatures ranging from 50 to $200^{\circ}C$ and laser densities ranging from $0.2\sim0.4 J/cm^2$. Optical and structural properties were measured by XRD, SEM, AFM, PL measurement.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.13-17
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• 1997

It is identified that the diamond films grown o bias-treated (100) silicon showed different surface morphologies and film textures according to the initial applied dc bias voltage at the same growth condition. The highly oriented diamond film (HODF) was successfully grown on -200 V bias-treated silicon substrate in which the heteroepitaxial relation of $(100)_{dimond}//(100)_{si}\; and\; [110]_{diamond}//[110]_{si}$ was identified. On the contrary, the heteroepitaxial relation was considerably disturbed in the samples bias-voltage was a key factor in growing the highly oriented diamond film on (100) silicon substrate. Considering the experimental results, we proposed a new model about heteroepitaxial diamond growth on silicon, in which 9 diamond unit cell are matched with 4 silicon cells and the bond covalency of both atoms is satisfied via the intermediate layer at the interface as well.

• Journal of the Korean Wood Science and Technology
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• v.45 no.6
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• pp.857-871
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• 2017

The major substrates used in soilless growing media are peat moss and perlite, where peat moss is a limited and expensive natural resource. Determination of appropriate substrates based on technical and economic feasibility is the vital aspect of research and the key to success in any soilless production system. This research work was performed to evaluate different low-cost and sustainable alternative substrate as soilless growing media for horticulture plant. The objective of this study was to compare the effect of sawdust species and steam treatment, for physico-chemical properties and growth of horticultural plant. This study involves the physical and chemical characterization and growth test of four substrate (pine sawdust, oak sawdust, steamed pine sawdust and steamed oak sawdust) in order to evaluate their use as components of growing media. Steamed oak sawdust ($121^{\circ}C$, 30 min) showed adequate physical and chemical properties compared to peat moss for their use as growing media. The growing media were prepared using different mixture proportion to grow Brassica campestris L., Festuca arundinacea and Lespedeza cyrtobotrya Miq. The highest germination, stem length and leaf area of Brassica campestris L., Festuca arundinacea and Lespedeza cyrtobotrya were observed in 30 minute steamed oak sawdust mixture growing media. The steam treatment condition of sawdust used in the growing media significantly positive affected the germination, the stem length and the leaf area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.113-114
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• 2005

We present the effect of substrate temperature on the structural and optical properties of ZnO films grown on sapphire substrate by pulsed laser deposition. Growing at higher substrate temperature results in an increase in the surface roughness. The optimum c-axis orientation of the ZnO films occurs at the substrate temperature of 700$^{\circ}C$ The decay time shows a rapid increase in the substrate temperature from 400$^{\circ}C$ to 500$^{\circ}C$ and falls down gradually as the substrate temperature is approached to 700$^{\circ}C$.

• Journal of the Korean Society of Industry Convergence
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• v.20 no.5
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• pp.351-357
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• 2017

Growing plant in potting media without soil is known as Soilless cultivation. This method is used mostly in greenhouse cultivation to increase horticultural commodities production. Peat moss is commonly utilized as potting media substrate because of its characteristic. However, peat moss price is high because of the quantity of peat moss in nature has been decreased. Recently, most of the research is conducted to find the alternative growing medium to cultivate horticulture plant in potting media. Perlite and rice husk ash were mentioned that had a potent as alternative growing media for seasonal plants to increase agriculture production due to the lack of production area. This study aimed to determine the effect of using different substrate and growth performance of chili. The method used was the soilless cultivation. The chili was planted in the pot with perlite media, rice husk ash media, and peat moss media. The chili was measured after 65 days after planting. The result showed that rice husk ash and perlite were more potentials in chili growth performance than peat moss. Rice husk ash had the significant result of plant height. While, Perlite effect on root length, plant weight, leaf length, and stem diameter. The best alternative for cultivation chili without substrate based on this research was perlite then rice husk ash and peat moss.