• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.88-90
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• 2003

We reported an AC PDP structure with grooved front panel dielectric layer. The structure exhibits low breakdown voltage, better luminance, and better endurance to crosstalk in high Xe contents. It also shows less luminous efficacy then conventional structure because of the thinner dielectric layer, but we can apply the higher Xe contents to the grooved dielectric structure, which results in the higher luminous efficacy. We made experiments with the Xe contents from 4 to16% and total gas pressure from 400 to 600Torr. The grooved dielectric structure shows the improvement of 20% luminous efficacy and 17% luminance. The firing voltages lower about 40V at 600Torr and Xe 12, 16%. The discharge characteristics of grooved dielectric structure are verified also with 2D simulation.

• 마이크로전자및패키징학회지
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• 제12권1호
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• pp.17-20
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• 2005

In this paper, we presented the quasi-static characteristics of novel microstrip lines with anisotropic grooved dielectric in finite metal. A quasi-static mode-matching method has been used to analyze this new structure and the simulation results are validated through comparison with other available results. The results in this paper show that it is possible to control the propagation characteristics of microstrip lines with the use of anisotropic grooved dielectric in finite metal. Also anisotropic grooved dielectric in microstrip line can be newly added to the design parameters of high performance three dimensional monolithic microwave circuits and other microwave applications.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.123-126
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• 2007

In this study, a high luminous efficacy AC-PDP panel with long discharge gap and grooved dielectric layer has been studied. By applying this high efficacy concept and optimized driving waveform featuring negative biased sustain, ${\sim}2.6lm/W$ of luminous efficacy was achieved in 42- inch HD panel. Modified fabricating process and new discharge cell structure were investigated to obtain improved uniformity and operating characteristics.

• 한국정밀공학회지
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• 제13권11호
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• pp.46-56
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• 1996

Planarization technique is rapidly recognized as a critical step in chip fabrication due to the increase in wiring density and the trend towards a three dimensional structure. Global planarity requires the preferential removal of the projecting features. Also, the several materials i.e. Si semiconductor, oxide dielectric and sluminum interconnect on the chip, should be removed simultaneously in order to produce a planar surface. This research has investihgated the development of the chemical mechanical polishing(CMP) machine with uniform pressure and velocity mechanism, and the pad insensitive to pattern topography named hard grooved(HG) pad for global planarization. Finally, a successful result of uniformity less than 5% standard deviation in residual oxide film and planarity less than 15nm in residual step height of 4 inch device wafer, is achieved.