• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.246.2-246.2
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• 2014

Green-light emitting OLED with single layer of Alq3 and orange-light emitting OLED with double layer of rubrene/Alq3 as EML were fabricated and characterized comparatively. The two OLED devices were based on an anode of ITO, HTL of TPD, and cathode of Al, respectively. The green light emitting OLED was then prepared with Alq3 as both ETL and EML, while the orange-light emitting OLED was prepared with rubrene deposited on Alq3. All the component layers of the OLED devices were deposited by a thermal evaporation technique in vacuum. Photoluminescence characteristics of the EML layers were investigated. Electrolumiscence characteristics of the OLED devices were comparatively investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.301-302
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• 2009

The Green emitting OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was 7,371 cd/$m^2$ at the RF power of 25W. O2 plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of green OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.496-498
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• 2008

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high quantum efficiency. Wide-energy-gap material, 1,1-bis[(di-4-tolylamino) phenyl]cyclohexane (TAPC), with high triplet energy level was used as a hole transporting layer. Electrophosphorescent devices fabricated using TAPC as a hole-transporting layer and N,N'-dicarbazolyl-4,4'-biphenyl (CBP) doped with fac-tris(2-phenylpyridine) iridium [Ir(ppy)3] as the emitting layer showed the maximum external quantum efficiency ($\eta_{ext}$) of 19.8 %, which is much higher than the devices adopting 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (NPB) (${\eta}B_{ext}=14.6%$) as a hole transporting layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.83-88
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• 2004

BAlq was fabricated as for hole blocking layer in the OLED devices to investigate its electrical and optical characteristics. Device structure was ITO/$\alpha$ -NPD/EML/BAlq/Alq3/Al:Li using TYG-201, DPVBi (4, 4 - Bis (2, 2 - diphenylethen-1 - yls) - Biphenyl), Alq and DCJTB (4-(dicyanomethylene)-2- (1-propyls)6-methy 4H-pyrans) as green emitting material, blue emitting material, host material for red emission and red emitting guest material respectively. The OLED device showed optimum working voltage and electron density at 600 cd/$m^2$ when thickness of BAlq is 25$\AA$ for RGB OLED devices while their efficiencies are better at 50$\AA$ of BAlq. Red and blue color OLEDs also fabricated using 30$\AA$ thickness of BAlq and compared with those without BAlq layer. BAlq was more effective in electrical properties such as working voltage, current density and efficiency of red OLED than blue and green ones. This study describes that 30$\AA$ is optimum thickness of BAlq for best performance of full color OLED devices when using BAlq as a hole blocking material.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.628-631
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• 2007

We developed new green emitting materials based on the spiro moieties. The introduction of a spiro linkage into the structure of DJGH series lead to a reduction in crystallization tendency and an increase in glass transition temperature. they showed much better emitting efficiency and color purity than commercial host material $Alq_3$.

• Journal of Information Display
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• v.8 no.1
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• pp.10-13
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• 2007

We synthesized new blue and bluish green emitting materials by using fully substituted ethylene moieties. Multi-layered EL devices were fabricated with synthesized materials and evaluated in terms of emission color and luminescence efficiency. TBBPE[EML 2] device showed bluish-green CIE value of (0.236, 0.412) and 5.02cd/A at $10mA/cm^2$. BPBBPE[EML 3] device also showed sky-blue CIE value of(0.218, 0.355) and 2.31cd/A at $l0mA/cm^2$.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.247-250
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• 2015

Organic light-emitting diode (OLED) research field has received great attention from academic and industrial circles. Recently, The technical feature of OLEDs is more and more attractive in the lighting market, including area emission characteristics different from other existing light sources. Features are environmentally friendly and efficient use of energy, large area, ultra-light weight, and ultrathin shape, etc. Furthermore, OLED light became the mainstream of next-generation lighting to replace the light emitting diode (LED) fluorescent light. This article summarizes phosphorescent emitting materials that have been applied to white OLEDs. In particular, the chemical structures and device performances of the important yellow, orange, and red phosphorescent emitting materials is discussed. Systematic classification and understanding of the phosphorescent materials can aid the development of new light-emitting materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.837-840
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• 2014

Novel materials of $Zn(HPB)_2$ and Ir-complexes were respectively synthesized as blue or red emitting material. White Organic Light Emitting Diodes (OLED) were fabricated by using $Zn(HPB)_2$ for a blue emitting layer, Ir-complexes for a red emitting layer and $Alq_3$ for a green emitting layer. White OLED was fabricated by using double emitting layers of $Zn(HPB)_2$ and $Alq_3:Ir$-complexes, and hole blocking layer of BCP. We also varied the thickness of BCP. When the thickness of BCP layer was 5 nm, white emission was achieved. We obtained a maximum luminance of $3,500cd/m^2$. The CIE coordinates was (0.375, 0.331). From this study, we could propose that the hybrid structure is efficient in lighting application of white OLED by improvement of color purity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.571-575
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• 2014

We synthesized new materials of $Zn(HPB)_2$ and Ir-complexes as blue or red emitting material. We fabricated white Organic Light Emitting Diodes (OLED) by using $Zn(HPB)_2$ for the blue emitting layer, Ir-complexes for the red emitting layer and $Alq_3$ for the green emitting layer. We fabricated white OLED by using double emitting layers of $Zn(HPB)_2$:Ir-complexes and $Alq_3$. The doping rate of Ir-complexes was varied, such as 0.2%, 0.4%, 0.6%, and 0.8%, respectively. When the doping rate of $Zn(HPB)_2$:Ir-complexes was 0.6%, white emission was achieved. The Commission Internationale de l'Eclairage (CIE) coordinates of the white emission was (0.322, 0.312).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.758-763
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• 2006

We has been studied the thin film encapsulation effect for organic light-emitting diodes (OLED). To evaluate the passivation properties of the passivation layer materials, we have carried out the fabrication of green light emitting diodes with ultra violet(UV) light absorbing polymer resin, $SiO_2,\;and\;SiN_x$, respectively. From the measurement results of shrinkage properties according to the exposure time to the atmosphere, we found that $SiN_x$ thin film is the best material for passivation layer. We have investigated the emission efficiency and life time of OLED device using the package structure of $OLED/SiN_x/polymer$ resin/Al/polymer resin. The emission efficiency of this OLED device was 13 lm/W and life time was about 2,000 hours, which reach 95 % of the performance for the OLED encapsulated with metal.