• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.2
• /
• pp.127-130
• /
• 2005

The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy and electroluminescence measurements. As the quantum well growth time was changed, the wavelength was varied from 451 to 531 nm. In the varied current conditions, the blue LED with the InN MQW structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN MQW structures do not show the color temperature changes with the variations of applied currents.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.64-67
• /
• 2005

We fabricated an array consisting of organic TFTs(OTFT) and organic LEDs (OLED) in order to demonstrate the possible application of OTFTs to flexible active matrix OLED (AMOLED). The panel was composed of $64{\times}64$ pixels on 4 inch size polyethylene-terephehalate (PET) substrate in which each pixel had one OTFT integrated with one green OLED. The panel successfully displayed some letters and pictures by emitting green light with a luminance of $1.5\;cd/m^2$ at 6 V, which was controlled by the gate voltage of OTFT.

• Journal of the Semiconductor & Display Technology
• /
• v.22 no.2
• /
• pp.81-86
• /
• 2023

Recently, there has been an increased demand for light-emitting diode (LED) due to the growing emphasis on environmental protection. However, the use of GaN-based sapphire in LED manufacturing leads to the generation of defects, such as dislocations caused by lattice mismatch, which ultimately reduces the luminous efficiency of LEDs. Moreover, most inspections for LED semiconductors focus on evaluating the luminous efficiency after packaging. To address these challenges, this paper aims to detect defects at the wafer stage, which could potentially improve the manufacturing process and reduce costs. To achieve this, image processing and deep learning-based defect detection techniques for Sapphire Epi-Wafer used in Green LED manufacturing were developed and compared. Through performance evaluation of each algorithm, it was found that the deep learning approach outperformed the image processing approach in terms of detection accuracy and efficiency.

• Proceedings of the Plant Resources Society of Korea Conference
• /
• 2018.10a
• /
• pp.109-109
• /
• 2018

Bacillus subtilis B22, a chemotrophic and aerobic bacterial strain was isolated from homemade kimchi, identified by 16S rRNA gene sequencing. B22 was primarily screened by biochemical, carbon source utilization tests. B22 was used to produce pectinase and ${\beta}$-glucosidase by submerged fermentation under different light sources. B22 was incubated in pectin media and basal media (pH 7.0) under blue, green, red and white light-emitting diodes (LEDs), fluorescent white light, and in darkness at $37^{\circ}C$, orbital shaker 150 rpm for 24 hours. Fermentation under blue LEDs maximized pectinase production ($71.59{\pm}1.6U/mL$ at 24 h) and ${\beta}$-glucosidase production ($56.31{\pm}1.6U/mL$ at 24 h). Further, the production of enzyme increased to pectinase ($156{\pm}1.28U/mL$) and ${\beta}$-glucosidase ($172{\pm}1.28U/mL$) with 3% glucose as a carbon source. Activity and stability of the partially purified enzymes were higher at pH 6.0 to 8.0 and $25-55^{\circ}C$. The effect on the metal ions $Na^+$ and $K^+$ and (moderateactivity) $Mn^{2+}$ and $Ni^{2+}$ increased activity, while $Hg^{2+}$, $Cu^{2+}$, $Fe^{2+}$, and $Fe^{2+}$ inhibited activity. EDTA, phenylmethylsulfonyl fluoride and 5,5-dithiobis (2-nitrobenzoicacid) reduced activity, while tetrafluoroethylene and 1,10-phenanthroline inhibited activity. The amylase was highly tolerant of the surfactants TritonX-100, Tween-20, Tween-80 and compatible with organic solvents methanol, ethanol, isoamylalcohol, isopropanol, t-butylalcohol and the oxidizing agents hydrogen peroxide, sodium perborate and sodium hypochlorite, although potassium iodide and ammonium persulfate reduced activity. These properties suggest utility of pectinase and ${\beta}$-glucosidase produced by B. subtilis B22 under blue LED-mediated fermentation for industrial applications.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.2
• /
• pp.131-135
• /
• 2005

The effect of different surface passivation films on blue or green (465-505 nm) InGaN/GaN multi-quantum well light-emitting diodes (LEDs) die were examined. $SiO_2$ or $SiN_x$ deposited by plasma enhanced chemical vapor deposition, or $Sc_2O_3$ or MgO deposited by rf plasma enhanced molecular beam epitaxy all show excellent passivation qualities. The forward current-voltage (I-V) characteristics were all independent of the passivation film used, even though the MBE-deposited films have lower interface state densities ($3-5{\times}10^{12}\;eV^{-1}\;cm^{-2}$) compared to the PECVD films (${\sim}10^{12}\;eV^{-1}\;cm^{-2}$), The reverse I-V characteristics showed more variation, hut there was no systematic difference for any of the passivation films, The results suggest that simple PECVD processes are effective for providing robust surface protection for InGaN/GaN LEDs.

• Journal of the Korean Chemical Society
• /
• v.50 no.6
• /
• pp.471-476
• /
• 2006

series of Ca1-xSrxS:Ce phosphors were synthesized by solid-state reactions. The Ca1-xSrxS:Ce phosphors have a strong absorption in region from 430 nm to 470 nm. The emission peaks of CaS:Ce are located at 510 nm and 570 nm. The partial replacement of Ca by Sr in Ca1-xSrxS:Ce causes a blue shift of emission wavelengths. The Ca1-xSrxS:Ce can be used as bluish green and yellow emitting phosphors for white light emitting diodes (LEDs) pumped by the blue LED. We reported the optical properties of Ca1-xSrxS:Ce phosphors for application in phosphor converted white LEDs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.627-627
• /
• 2013

Recently, most studies concerning inorganic CdSe/ZnS quantum dot (QD)-polymer hybrid LEDs have been concentrated on the structure with multiple layers [1,2]. The QD LEDs used almost CdSe materials for color reproduction such as blue, green and red from the light source until current. However, since Cd is one of six substances banned by the Restriction on Hazardous Substances (RoHS) directive and classified into a hazardous substance for utilization and commercialization as well as for use in life, it was reported that the use of CdSe is not suitable to fabricate a photoelectronic device. In this work, we demonstrate a novel, simple and facile technique for the synthesis of ZnO-graphene quasi-core.shell quantum dots utilizing graphene nanodot in order to overcome Cd material including RoHS materials. Also, We investigate the optical and structural properties of the quantum dots using a number of techniques. In result, At the applied bias 10 V, the device produced bluish-white color of the maximum brightness 1118 cd/$m^2$ with CIE coordinates (0.31, 0.26) at the bias 10 V.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.29 no.6
• /
• pp.27-34
• /
• 2015

There has been a critical issue in optical simulation of phosphors in LEDs due to their light-reabsorption properties. To improve the accuracy of optical modeling for a white LED package, we utilized the spectrum data of the phosphor-dispersed encapsulant film instead of the phosphor powder. By measuring white LED packages with green and red phosphors, the maximum difference between simulation and experimental results of a color temperature, a color rendition index number and a color coordinate corresponds to ${\Delta}T=95K$, ${\Delta}Ra=1.7$ and ${\Delta}xy=0.007$, respectively. Based on those results, the proposed method can well explain the change of emission spectra of white LEDs with more than two phosphors which introduce the complex optical phenomena such as absorption, reabsorption, light emission, reflection and scattering, etc.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.20.2-20.2
• /
• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1338-1342
• /
• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.