• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.209.2-209.2
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• 2015

Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.157-157
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• 2011

Graphene has generated significant interest in the recent years as a functional material for electronics, sensing, and energy applications due to its unique electrical, optical, and mechanical properties. Much of the considerable interest in graphene stems from results obtained for samples mechanically exfoliated from graphite. Practical applications, however, require reliable and well-controlled methods for fabrication of large area graphene films. Recently high quality graphene layers were fabricated using chemical vapor deposition (CVD) on nickel and copper with methane as the source of the carbon atoms. Here, we report a simple and efficient method to synthesize graphene layers using solid carbon source. Few-layer graphene films are grown using filtered vacuum arc source (FVAS) technique by evaporation of carbon atom on Ni catalytic metal and subsequent annealing of the samples at 800$^{\circ}$C. In our system, carbon atoms diffuse into the Ni metal layer at elevated temperatures followed by their segregation as graphene on the free surface during the cooling down step as the solubility of carbon in the metal decrease. For a given annealing condition and cooling rate, the number of graphene layers is easily controlled by changing the thickness of the initially evaporated amorphous carbon film. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as CVD and chemical methods.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.384-388
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• 2015

We prepared blocking layers by adding 0.0 ~ 0.6 wt% nano diamond blends (DBs) to $TiO_2$ blocking layers to improve the energy conversion efficiencies (ECEs) of dye sensitized solar cells (DSSCs). TEM and micro-Raman spectroscopy were used to characterize the microstructure and phases of DBs, respectively. Optical microscopy and FE-SEM were used to analyze the microstructure of the $TiO_2$ blocking layer with DBs. UV-VIS-NIR spectroscopy was used to determine the absorbance of the working electrodes. A solar simulator and a potentiostat were used to determine the photovoltaic properties and the impedance of the DSSCs with DBs. From the results of the DBs analysis, we determined a 6.97 nm combination of nano diamonds and graphite. We confirmed that ECE increased from 5.64 to 6.48 % when the added DBs increased from 0.0 to 0.2 wt%. This indicates that the effective surface area and electron mobility increased when DBs were added to the $TiO_2$ blocking layer. Our results indicate that the ECE of DSSCs can be enhanced by adding an appropriate amount of DBs to the $TiO_2$ blocking layers.

• Journal of Korea Foundry Society
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• v.17 no.4
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• pp.393-401
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• 1997

Commercial flake graphite cast iron substrate was coated with titanium powder by low pressure plasma spraying and was irradiated with a $CO_2$ laser to produce the wear resistant composite layer. From the experimental results of this study, it was possible to composite TiC particles on the surface layer by direct reaction between carbon existed in the cast iron matrix and titanium with thermal sprayed coating by remelting and alloying them using laser irradiation. The cooling rate of laser remelted cast iron substrate without titanium coating was about $1{\times}10^4$ K/s to $1{\times}10^5$ K/s in the order under the condition used in this study. The microstructure of alloyed layer consisted of three zones, that is, TiC particule crystallized zone (MHV $400{\sim}500$), the mixed zone of TiC particule+ledebulite (MHV $650{\sim}900$) and the ledebulite zone (MHV $500{\sim}700$). TiC particules were crystallized as a typical dendritic morphology. The secondary TiC dendrite arms were grown to the polygonized shape and were necking. And then the separated arms became cubic crystal of TiC at the slowly solidified zone. But in the rapidly solidified zone of fusion boundry, the fine granular TiC particules were grouped like grape.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.85-85
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• 2010

Graphene, the building block of graphite, is one of the most promising materials due to their fascinating electronic transport properties. The pseudo-two-dimensional sp2 bonding in graphene layers yields one of the most effective solid lubricants. In this poster, we present the correlation between electrical and nanomechanical properties of graphene layer grown on Cu/Ni substrate with CVD (Chemical Vapor Deposition) method. The electrical (current and conductance) and nanomechanical (adhesion and friction) properties have been investigated by the combined apparatus of friction force microscopy/conductive probe atomic force microscopy (AFM). The experiment was carried out in a RHK AFM operating in ultrahigh vacuum using cantilevers with a conductive TiN coating. The current was measured as a function of the applied load between the AFM tip and the graphene layer. The contact area has been obtained with the continuum mechanical models. We will discuss the influence of mechanical deformation on the electrical transport mechanism on graphene layers.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1994.04c
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• pp.6-6
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• 1994

Har dmaterials such as cemented carbides with or without coated layer, cermets, ceramics and diamond or c-BN high pressure sintered compact are used for cutting tools, wear -resistant parts, rock drilling bits and/or high pressure vessels. These hardmaterials contain not only hard phase, but also second consituent as the element for forming ductile phase and/or sintering aid, and the mechanical properties of each material depend on (1) the amount of the second constituent as well as (2) the grain size of the hard phase. The hardness of each material mainly depends on these two factors. The fracture strength, however, largely depends on other microstructur a1 factors as well as the above two factors. For all hardmaterials, the fracture strength is consider ably affected by (3) the size of microstructur a1 defect which acts as the fracture source. In cemented carbides, the following factors which are generated mainly due to the addition of the second constituent are also important; (4) the variation of the carbon content in the normal phase region free from V-phase and graphite phase, (5) the precipitation of $Co_3$ during heating at about $800^{\circ}C$,(6) the domain size of binder phase, and (7) the formation of ${\beta}$-free layer or Co-rich layer near the surface of sintered compacts. For cemented carbides coated with thin hard substance, the important factors are as follows; (8) the kind of coated substance, (9) the formation of ${\eta}$-phase layer at the interface between coated layer and substrate, (10) the type of residual stress (tension or compression) in the coated layer which depends on the kind of coating method (CVD or PVD), and (11) the properties of the substrate, and (12) the combination, coherency and periodicity of multi-layers. In the lecture, the details of these factors and their effect on the strength will be explained.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.6
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• pp.57-63
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• 2019

S-parameters were used to analyze the effect of the circuit according to the height of the EMI shield layers. Among the S-parameters, S11, S21, S22, and S31 were used as factors for determining the effect on the circuit function. Simulations were performed using shields made of Graphite and Ferrite, and the frequencies were run from 100 MHz to 1 GHz. As the height of the shield was increased, the value of S21 was getting closer to 0 dB. In addition, the SE value was confirmed to improve the shielding performance according to the thickness of the insulating layer only in a specific frequency band. Based on 800um with thickest silicon dioxide thickness, the FG structure averaged -1 dB in narrow frequency bands between 100 MHz and 300 MHz, showing better efficiency than GF with an average of -2 dB. Although GF structures do not show high efficiency, they exhibit average performance of -3 dB in frequency bands between 100 MHz and 1 GHz rather than FG structures that sway over a wide range. In other words, FG and GF structures have trade-off structures. Therefore, it should be noted that the appropriate structure is selected for use.

• Current Photovoltaic Research
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• v.4 no.1
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• pp.16-20
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• 2016

$Cu_2ZnSnS_4$ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with $V_{oc}$ of 570 mV, $J_{sc}$ of $18.15mA/cm^2$ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.

• Progress in Medical Physics
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• v.29 no.4
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• pp.101-105
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• 2018

In this paper, a neutron moderation system for boron neutron capture therapy (BNCT) based on a $^{252}Cf$ neutron source is proposed. Different materials have been studied in order to produce a high percentage of epithermal neutrons. A moderator with a construction mixture of $AlF_3$ and Al, three reflectors of $Al_2O_3$, BeO, graphite, and seven filters (Bi, Cu, Fe, Pb, Ti, a two-layer filter of Ti+Bi, and a two-layer filter of Ti+Pb) is considered. The MCNPX simulation code has been used to calculate the neutron and gamma flux at the output window of the neutronic system. The results show that the epithermal neutron flux is relatively high for four filters: Ti+Pb, Ti+Bi, Bi, and Ti. However, a layer of Ti cannot reduce the contribution of ${\gamma}$-rays at the output window. Although the neutron spectra filtered by the Ti+Bi and Ti+Pb overlap, a large fraction of neutrons (74.95%) has epithermal energy when the Ti+Pb is used as a filter. However, the percentages of the fast and thermal neutrons are 25% and 0.5%, respectively. The Bi layer provides a relatively low epithermal neutron flux. Moreover, an assembly configuration of 30% $AlF_3+70%$ Al moderator/$Al_2O_3$ reflector/a two-layer filter of Ti+Pb reduces the fast neutron flux at the output port much more than other assembly combinations. In comparison with a recent model suggested by Ghassoun et al., the proposed neutron moderation system provides a higher epithermal flux with a relatively low contamination of gamma rays.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.7-11
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• 2022

Recently, Hanmi Gemological Institute & Laboratory (HGI) had an opportunity to examine 5 transparent synthetic moissanite. The round brilliants ranged from 0.93 to 0.96 ct and had a colorless, pink, yellow, blue, and red color. Advanced testing results, including Fourier-transform infrared (FTIR) and Raman spectroscopy, identified all the specimens as synthetic moissanite. Under the microscope, all samples except the colorless were confirmed to be a synthetic moissanite coated with a colored film. EDXRF chemical analysis detected very weak X-ray fluorescence peak characteristics of Ca, Ti, and Co in the colored samples. These features were not detected in the colorless sample. Raman spectroscopy investigation was unable to detect the 1332 cm^-1 (produced by sp³ bonding of carbon atoms) or the ~1550 cm^-1 (produced by graphite-related sp² bonding) peak in the colorless sample. The SEM image of the colorless sample showed no indication of a coating. The TEM image of the colorless sample revealed the presence of a 3~8 nm thick layer on the moissanite. Moreover, from the corresponding STEM Z-contrast image combined with the energy-dispersive X-ray spectroscopy (EDX) line profiles and EDX elemental maps, this layer was estimated to be carbon, silicon and oxygen.