• Journal of Powder Materials
• /
• v.25 no.2
• /
• pp.99-103
• /
• 2018

Spherical monosized pure aluminum (Al) particles are successfully fabricated by the pulsated orifice ejection method (POEM). The surface reaction between Al and the graphite crucible is investigated by analysing the microstructure and chemical composition of the materials. No significant chemical reaction occurs between Al and the graphite owing to the crystalline Al oxide (${\gamma}-Al_2O_3$) layer generated in the initial state. The ${\gamma}-Al_2O_3$ layer is clearly observed in all regions between the Al particles and graphite via transmission electron microscopy and confirmed by the selected area diffraction pattern. The morphology of the ${\gamma}-Al_2O_3$ layer perfectly follows the surface morphology of the graphite crucible, which showed nanoscale roughness. This implies that molten Al could not directly contact graphite even though the surface of the crucible became rough to some extent. However, this passivation phenomenon allowed the successful fabrication of monosized pure Al particles. Therefore, POEM is a useful process at least to manufacture monosized pure Al particles.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.3 no.2
• /
• pp.117-124
• /
• 1993

It was found that the basic principle of continuous crystal growth method was following as; the powder supplied from the feeding system is molten in the graphite crucible under the ambient gas. After forming the molten zone in the lower part of the crucible, the seed crystal is deeped into the melt and pulled down with the rotation so that the melt crystallized from the seed. When the lowering rate, rotation rate, feeding rate and temperature are correct, the single crystal can grow. The critical melt level, the feeding rate, the growth rate, the change of the shape of molten zone by the graphite susceptor and crucible, the position of work coil, the balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed which are the variables of the crystal growth and the sintering phenomenon of melt surface were researched.

• Journal of Korea Foundry Society
• /
• v.25 no.3
• /
• pp.115-122
• /
• 2005

In the present study, an EMC (Electromagnetic Casting) process, using a segmented Cu cold crucible under a high frequency alternating magnetic field of 20 kHz, was practiced for the fabrication of poly-crystalline Si ingot of 50 mm diameter. The effects of Joule heating and electromagnetic pressure in molten Si were systematically investigated with various processing parameters such as electric current and crucible configuration. A preliminary experimental work was initiated with the pure Al system for the establishment of a stabilized non-contact working condition, and further adapted to the semiconductor-off-grade Si system. A commercialized software such as Opera-3D was utilized in order to simulate electromagnetic pressure and Joule heating. In order to evaluate the meniscus shape of the molten melts, shape parameter was used throughout the research. A segmented graphite crucible, which was attached at the upper part of the cold crucible, was introduced to enhance significantly the heating efficiency of Si melt keeping non-contact condition during continuous melting and casting processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.223-223
• /
• 2010

태양 전지에 사용되는 실리콘의 전자기 유도 용융 기술은 잉곳(ingot)의 성장 및 금속 정련 등의 핵심 공정인 실리콘 용융에서 사용되는 중요한 기술이다. 하지만, 유도 용융에 사용되는 흑연 도가니에 의한 실리콘의 오염은 실리콘의 순도저하에 요인으로 작용한다. 흑연 도가니와 용융된 실리콘이 접하는 계면에서 탄소의 오염이 발생하게 되며, 실리콘 내부에 흡수한 탄소는 대표적인 비금속 불순물로 태양전지 효율을 감소시킨다. 본 연구에서 사용되는 흑연 도가니는 유도 코일의 전자기력에 의해 실리콘과 무접촉 또는 연접촉이 가능한 구조이다. 또한, 유도 자기장을 이용하여 실리콘과 같은 반도체를 용융할 경우, 고상에서의 낮은 전기전도도로 인해 효과적인 줄-발열(Joule Heating)이 불가능하므로 플라즈마와 같은 보조 열원을 필요로 한다. 본 연구에서는, 보조 열원 없이 세그먼트(segment)된 흑연 도가니를 이용한 실리콘 용융 연구를 진행하였다.

• Journal of Korea Foundry Society
• /
• v.20 no.4
• /
• pp.247-253
• /
• 2000

Titanium was melted in the CaO-coated alumina crucible and the reaction between the melt and the coating layer was negligible. The volume fraction of the gas porosity was decreased with increasing pressure and the sound bar castings with no porosity was obtained under the Ar atmosphere of the pressure of $300kN/mm^2$. The surface of the casting obtained from CaO-coated graphite mold was slightly rougher than that from graphite without coating. The reaction product of titanium melt with the layer of CaO was mainly titanium oxide and that with graphite crucible was titanium cabide with small amount of titanium nitride.

• Journal of the Korean Ceramic Society
• /
• v.30 no.4
• /
• pp.309-315
• /
• 1993

Gas pressure sintering is a promising process in various densification methods of high strength Si3N4 ceramics. Environmental influences on gas pressure sintering of Si3N4 was investigated with the variationof packing powder, specimen container and N2 gas pressure. The specimens had higher density, larger weight loss and inhomogeneous color in graphite specimen container than in SN26 crucible. The variations of sintering densities in various packing powders (Si3N4, SN26, AlN, BN) were very small but SiC powder was synthesised in graphite crucible with Si3N4 packing powder, aluminium oxynitride compounds were synthesised in SN26 crucible with AlN packing power. Also N2 gas pressure over 20kg/$\textrm{cm}^2$ reduced the densification of Si3N4 in one step-gas pressure sintering. As the result of two step-gas pressure sintering at 700kg/$\textrm{cm}^2$ for 15min., relative density of 99.9% and 3-point bending strength of 1090MPa and dense microstructure of 3~4${\mu}{\textrm}{m}$ grain size were obtained.

• Journal of Korea Foundry Society
• /
• v.35 no.5
• /
• pp.114-119
• /
• 2015

This paper reports the effect of a refractory crucible type on the microstructure of duplex stainless steel (DSS) cast with the addition of gadolinium using air-induction melting. Grade 4A DSSs with 1 wt% of gadolinium (Gd) were fabricated in various crucibles including alumina ($Al_2O_3$), magnesia (MgO), calcia (CaO) coated with yttria ($Y_2O_3$) and graphite. The standard free energies of the formation of calcium and yttrium oxide were lower than those of gadolinium oxide and other crucible elements based oxide. The yield of Gd in DSS using $Al_2O_3$, MgO, CaO-coated $Y_2O_3$ and graphite was 5, 19, 83 and 96%, respectively. As Gd yield increased, the amount of Gd-based inclusions increased, the size of the inclusions were reduced, and the inclusions became evenly distributed.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.2
• /
• pp.51-55
• /
• 2015

The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
• /
• 2010.04a
• /
• pp.177-177
• /
• 2010

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.7
• /
• pp.673-679
• /
• 2006

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. In this study, SiC crystal boules were prepared with different angles in trapezoid-shaped graphite seed holders using sublimation physical vapor transport technique (PVT) and then their crystal quality was systematically investigated. The temperature distribution in the growth system and the crystal shape were varied with angles in trapezoid-shaped graphite seed holders, which was successfully simulated using 'Virtual Reactor'. The SiC polytype proved to be the n-type 6H-SiC from the typical absorption spectrum of SiC crystal. The micropipe densities of SiC wafers in this study were measured to be < $100/cm^2$. Consequently, SiC single crystal with large diameter was successfully achieved with changing angle in trapezoid-shaped graphite seed holders.