• Journal of the Korean institute of surface engineering
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• v.42 no.1
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• pp.1-7
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• 2009

Resistive heating sources are widely used to prepare thin films by vapor deposition because they are cheap, and easy to install and handle in vacuum system. Graphite is one of materials used to make the resistive heating source, but until now only limited applications have been possible as it reacts easily with evaporating materials at high temperature. In this study, evaporation characteristics of aluminum have been investigated by using graphite boat thermally treated with BN powder. The employed graphite boat has been prepared by spray-coating BN power onto the cavity surface of the boat and thermal treatment with aluminum in vacuum at the temperature of more than $1400^{\circ}C$. The voltage-current characteristics as well as resistivity changes of the graphite boat have been investigated during aluminum evaporation according to the applied voltage and time. The evaporation aspect has been picturized during flash evaporation for 40 seconds based on the characterization results. The evaporation rate of the graphite boat has been compared with that of BN boat. The graphite boat showed some different characteristics compared with BN boat, in that the evaporation occurred at the last stage of flash evaporation. The film appearance according to the applied voltage has been compared, and also the reflectance of the resulting film has been investigated according to the film thickness. It has been found that the graphite boat thermally treated with BN powder can be used for aluminum evaporation without problem.

• Journal of the Korean Institute of Navigation
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• v.19 no.4
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• pp.83-92
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• 1995

In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ${\pm}0.006^{\circ}C$ at $800^{\circ}C$, temperature uniformity for graphite boat around was within ${\pm}0.15^{\circ}C$ at $650^{\circ}C$, and cooling rate was controllable from $2.2^{\circ}C$/min to $0.05^{\circ}C$/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.

• Journal of the Korean institute of surface engineering
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• v.24 no.1
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• pp.25-30
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• 1991

The evaporation characteristics of Ag, Al, Au, Cr. Cu, In, Mg, Mn, Pb, Pd, Si, SiO, Sn, Ti and Zn with the various resistive heating sources have been studied. The employed sources are refractory metal (Mo, Ta and W) boats, W-wire, ceramic (usually Al2O3)-coated and -barriered refractory metal boats, and special boats such as baffled boats and intermetallic boats (nitride compound and graphite). We investigated the melting mode, evaporation rate at a specific power, and lifetime of the sources. A special boat holder is also discussed which is needed to cool the sources at a large heat capacity.

• Korean Journal of Optics and Photonics
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• v.8 no.5
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• pp.438-442
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• 1997

In this study we report the effect of melt instability on the Liquid Phase Epitaxy. We made a new graphite boat of the structure relieving the instability of melt. It did not improve the uniformity of each layers but also reduced the thickness of growth layers and the deviation of the thickness over 1/2, 1/3 respectively. Moreover, we could get the growth layer of about 80$\AA$. With the point of melt stability in view we investigated the effect of InP seed used in two phase solution method. It is concluded that the quality of layers grown by the single crystal is superior to that by the poly crystal in two phase solution method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.282-288
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• 2017

In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zn-doped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement. The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole ($1.25mm{\times}25mm$) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of $8{\times}10^{18}/cm^2$ by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.