• 센서학회지
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• 제32권2호
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• pp.100-104
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• 2023

In this study, a device was fabricated to check the possibility of a memory device by controlling the oxygen functional groups in graphene oxide formed with a 45-second exposure time. We discovered that graphene oxide can be formed using the ultraviolet (UV) light treatment method with different exposure times. Moreover, Raman spectroscopy measurement revealed that the oxygen functional groups can be moved by controlling the voltage. We further studied the change in the local graphene oxide region, which was found to be related to the modulation of the electrical properties of the device. Therefore, the fabricated graphene oxide device can be used as a wettability switching membrane and graphene-based ion transport device.

• 반도체디스플레이기술학회지
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• 제20권1호
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• pp.54-58
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• 2021

The RGO with controllable oxygen functional groups is a novel material as the active layer of resistive switching memory through a reduction process. We designed a nanoscale conductive channel induced by local oxygen ion diffusion in an Au / RGO+GQD / Al resistive switching memory structure. A strong electric field was locally generated around the Al metal channel generated in BIL, and the local formation of a direct conductive low-dimensional channel in the complex RGO graphene quantum dot region was confirmed. The resistive memory design of the complex RGO graphene quantum dot structure can be applied as an effective structure for charge transport, and it has been shown that the resistive switching mechanism based on the movement of oxygen and metal ions is a fundamental alternative to understanding and application of next-generation intelligent semiconductor systems.