• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.228.2-228.2
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• 2014

Characteristics of high Fermi velocity, high mechanical strength, and transparency offer tremendous advantages for using graphene as a promising transparent conducting material [1] in electronic devices. Although graphene is a prospective candidate for touch sensor with strong mechanical properties [2] and flexibility, only few investigations have been carried out in the field of sensor as a device form. In this study, we suggest ultra-highly sensitive and transparent graphene touch sensor fabricated by single layer graphenes. One of the graphene layers is formed in the top panel as a disconnected graphene beam transferred on PDMS, and the other of the graphene layer is formed with line-patterning on the bottom panel of triple structure PET/PI/SiO2. The touch sensor shows characteristics of flexible. Its transmittance is approximately 75% where transmittance of the top panel and the bottom panel are 86.3% and 87%, respectively, at 550 nm wavelength. Sheet resistance of each graphene layer is estimated as low as $971{\Omega}/sq$. The results show that the conductance change rate (${\Delta}C/C0$) is $8{\times}105$ which depicts ultra-high sensitivity. Moreover, reliability characteristic confirms consistent behavior up to a 100-cycle test.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.384.2-384.2
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• 2014

We investigated the electrical and structural properties of chemical vapor deposition (CVD)-grown graphene and post treated by O2 plasma. For the patterning of graphene, the plasma technology is generally used and essential for etching of graphene. But, the cautious O2 plasma treatments are required to avoid the damage in graphene edge which can be the harmful effects on the device performance. To analyze the effects of plasma treatment on structural properties of graphene, the change of surface morphology of graphene are measured by scanning electron microscope and atomic force microscope before and after plasma treatment. In addition, the binding energy of carbon and oxygen are measured through to X-ray photoelectron spectroscopy. After plasma treatment, the severe changes of surface morphology and binding energy of carbon and oxygen were observed which effects on the change of sheet resistance. Finally, to analyze of graphene characteristics, we measured the Raman spectroscopy. The measured results showed that the plasma treatment makes the upward of D-peak and downward of G'-peak by elevated power of plasma.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2014.11a
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• pp.226-227
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• 2014

We demonstrate nanoscale local anodic oxidation (LAO) patterning on few layer graphene using atomic force microscope (AFM) at room temperature and normal atmosphere. We focus on the humidity dependency in nanoscale oxidation of graphene. The relationship between the oxidation size and the AFM setting values, such as set point, tip speed, and humidity are observed. By changing these values, proper parameters were found to produce features on demand size. This technique provides an easy way to form graphene oxide lithography without any chemical resists. We have obtained oxidation size down to 50-nm with 6-nm-height oxide barrier line with $0.1{\mu}m/s$ tip scanning speed and micrometer size symbols on a graphene flake. We attribute the bumps to local anodic oxidation on graphene surface and combination of oxygen ions into the graphene lattice.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.564-564
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• 2012

Graphene has been emerged as a fascinating material for future nanoelectronic applications due to its extraordinally electronic properties. However, their zero-bandgap semimetallic nature is a major problem for applications in high performance field-effect transistors (FETs). Graphene nanoribbons (GNRs) with narrow widths (${\geq}10nm$) exhibit semiconducting behavior, which can be used to overcome this problem. In previous reports, GNRs were produced by several approaches, such as electron beam lithography patterning, chemically derived GNRs, longitudinal unzipping of carbon nanotubes, and inorganic nanowire template. Using these methods, however, the width distribution of GNRs was a quiet broad and substantial defects were inevitably occurred. Here, we report a novel approach for fabricating width-tailored GNRs by focused ion beam-assisted chemical vapor deposition (FIB-CVD). Width-tailored phenanthrene ($C_{14}H_{10}$) templates for direct growth of GNRs were prepared on $SiO_2$/Si substrate by FIB-CVD. The GNRs on the templates were synthesized at $900-1,050^{\circ}C$ with introducing $CH_4$ $(20sccm)/H_2$ (10 sccm) mixture gas for 10-300 min. Structural characterizations of the GNRs were carried out using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.237.1-237.1
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• 2016

Electrical properties of graphene-based field effect transistors (G-FETs) can be degraded in ambient conditions owing to physisorbed oxygen or water molecules on the graphene surface. Passivation technique is one of a fascinating strategy for fabrication of G-FETs, which allows to sustain electrical properties of graphene in the long term without disrupting its inherent properties: transparency, flexibility and thinness. Ironically, despite its importance in producing high performance graphene devices, this method has been much less studied compared to patterning or device fabrication processes. Here we report a novel surface passivation method by using atomically thin self-assembled alkane layers such as C18- NH2, C18-Br and C36 to prevent unintentional doping effects that can suppress the degradation of electrical properties. In each passivated device, we observe a shift in charge neutral point to near zero gate voltage and it maintains the device performance for 1 year. In addition, the fabricated PG-FETs on a plastic substrate with ion-gel gate dielectrics exhibit not only mechanical flexibility but also long-term stability in ambient conditions. Therefore, we believe that these highly transparent and ultra-thin passivation layers can become a promising candidate in a wide range of graphene based electronic applications.

• Textile Coloration and Finishing
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• v.35 no.2
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• pp.121-127
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• 2023

In this study, a comprehensive investigation was conducted on the morphological and property changes of laser-induced nanocarbon (LINC) as a function of laser process parameters. LINC was formed on the surfaces of polyimide films with different backbone structures under various process conditions, including laser power, scan speed, and resolution. Three different forms of LINC electrodes (i.e., continuous 3D porous graphene, wooly nanocarbon fibers, line cut) were formed depending on the laser power and scan speed. Furthermore, heteroatom doping induced from the chemical structure of the polyimide during laser patterning was found to be effective in modifying the electrical properties of LINC electrodes. The LINC surfaces exhibited different microstructures depending on the laser beam resolution under constant laser power and scan speed, allowing for controllable surface wettability. The correlation between the chemical structure of the polymer substrate, laser process parameters, and carbonized surface properties in this study is expected to be utilized as fundamental understanding for the manufacturing of next-generation carbon-based electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.385-385
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• 2011

Ion beam Sputtering (IBS)를 이용한 물질 표면의 pattern 형성은 물리적 변수 조절로 손쉽게 nano structure의 크기와 형태를 조절할 수 있어 관심을 받고 있다. 본 연구발표에서는 massless Dirac Fermion behavior로 인한 highly carrier mobility와 같은 특성으로 인해 차세대 device material로 각광받고 있는 Graphene의 layered compound (층상구조) 형태인 HOPG (Highly Ordered Pyrolysis Graphite)에 IBS (Ion beam Sputtering)를 이용해 nano structure가 형성 가능함을 보이고 그 특징에 대해 소개하려 한다. HOPG(0001)를 Sputter 했을 때, 표면에 잘 정렬된 nano ripple pattern이 형성 가능함을 확인하였으며 sputter하는 시간을 변화하면 약 10 nm에서 80 nm까지 wavelength를 조절할 수 있다. 또한 이전의 IBS를 이용한 연구들에서 확인할 수 있는 다른 물질의 곧게 뻗은 nano ripple과는 다르게 ripple의 끝에 nano swab이 생기는 것을 AFM (Atomic Force Microscope)으로 확인할 수 있었다. 이러한 Graphite에서만 나타나는 Sputter에 의한 표면의 변화의 원인을 규명하고자 Sputter가 지속됨에 따라 나타나는 mopology의 roughness와 wavelength의 시간에 따른 dynamic scaling behavior를 확인하였고 그 얼개를 알기 위해 simulation을 수행 하였다.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.293-300
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• 2018

Reduced graphene oxide (rGO) nanosheets were patterned with poly[benzodithiophene-bis(decyltetradecyl-thien) naphthothiadiazole] (PBDT-DTNT) and poly[bis(triiso-propylsilylethynyl) benzodithiophene-bis(decyltetradecyl-thien) naphthobisthiadiazole] (PBDT-TIPS-DTNT-DT) and used in photovoltaics. Conductive patternings changed via surface modification of rGO; because polymers encountered a high hindrance while assembling onto grafted rGO. The best records were detected in indium tin oxide (ITO):poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS):PBDTDTNT/rGO:PBDT-DTNT:LiF:Al devices, i.e., short current density $(J_{sc})=11.18mA/cm^2$, open circuit voltage $(V_{oc})=0.67V$, fill factor (FF) = 62% and power conversion efficiency (PCE) = 4.64%. PCE increased 2.31 folds after incorporation of PBDT-DTNT into thin films. Larger polymer assemblies on bared-rGO nanosheets resulted in greater phase separations.