• 제목/요약/키워드: Grain-orientation

검색결과 350건 처리시간 0.024초

화학증착된 TiN 박막의 구조적 특성 및 결합력에 관한 연구 (Structural Characteristisrics and Adhesion of Chemicaly Vapor Deposited TiN Films on Stainless Steels)

  • 이민섭;이성래;백영현
    • 한국표면공학회지
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    • 제22권1호
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    • pp.17-25
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    • 1989
  • The structural Charactesties and adhesion of chemically vapor deposited TiN film on stain less steels have been investated as functions of deposition temperature, surface roughness of sub state, and types of substrates. The grain zine and the lattice parameter of TiN film decreased with decreasing roughness of substates. The(200) preferred orientation was developed dominatly and the lattlice parameter decreased as temperature intereased reardless of the surdless roughnessand type of the substrates used. The surface morphology of TiN film changed from bushed crystal to a plate and then to pyamidal dense crystals with an increase in the deposition temperature. The adhesion of TiN films increased with coating thinkness and decreased with surface roughness in general. The calculations using a Bejamin & Weaver's model have been compard. Maximum valuse of adhesion energy calculated using Laguier's model were W304=331Jm-2,w410=113Jm-2,andW430=107jm-2

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냉각주형식 연속주조장치에 의한 일방향응고 Cu 선재의 제조 (Unidirectionally Solidified Cu Rod Fabrication Using Continuous Casting Apparatus with Cooled Mold)

  • 조훈;조인성
    • 한국주조공학회지
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    • 제29권5호
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    • pp.198-203
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    • 2009
  • In order to manufacture copper ultra fine wire used for bonding wire in integrated circuit package, continuous casting process, which can produce high purity copper rod with small cross section, and wiredrawing process have to be optimized to prevent wire brakeage during entire manufacturing process of fine wire. The optimum condition for producing copper rod with mirror surface has to established by investigation of the effects of several parameters such as withdrawal speed, superheat and rod diameter on grain morphology of the cast rod and on its drawing characteristics to fine wire. The purpose of this study is to propose the optimized process parameters in continuous casting process in order to produce cast rod without internal defects, and to predict microstructure orientation suitable for wire drawing process.

콘크리트 기공 솔루션에서의 열간 압연 및 열 기계 처리 철근의 부식 특성 (Corrosion Characteristics of hot rolled and thermo-mechanically treated steel rebar in concrete pore solution)

  • 이한승;싱 지텐드라 쿠마르
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2018년도 춘계 학술논문 발표대회
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    • pp.202-203
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    • 2018
  • Chemistry and microstructure of steel reinforcement bars play an important role to control the corrosion in concrete environments. In present study, we have chosen two different microstructure of steel rebars produced from companies and assessed their corrosion characteristics in simulated concrete pore (SCP) solution with prolonged exposure periods. Hot rolled steel rebar showed more corrosion resistance compare to thermo-mechanically treated (TMT) one. The growth of passive is greater in hot rolled (A) than TMT (B) due to orientation of microstructure. TMT steel rebar exhibit distorted microstructure with many micro cells which enhances the galvanic coupling and induce the deterioration while on the other hand hot rolled rebars exhibit fine grain boundary which responsible in growth of uniform, adherent and protective passive film resultant improved impedance was observed.

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Characteristics of fluoride/glass as a seed layer for microcrystalline silicon film growth

  • Choi, Seok-Won;Kim, Do-Young;Ahn, Byeong-Jae;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.65-66
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    • 2000
  • Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

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$A_2B_2O_7$계를 중심으로 한 고온용 압전체의 개발동향 (The recent trend of $A_2B_2O_7$ piezoelectric ceramics having high curie temperature)

  • 남효덕
    • E2M - 전기 전자와 첨단 소재
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    • 제9권4호
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    • pp.415-421
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    • 1996
  • 본 고에서는 고온센서용 압전체가 필요하고 실용화할 수 있는 다결정 압전세라믹스 및 박막재료가 요구되는 점을 감안하여 고온에서도 사용할 수 있는 단결정 $A_{2}$B$_{2}$O$_{2}$형의 성장과 그 전기적 특성 및 최근 개발을 시도하고 있는 다결정 $A_{2}$B$_{2}$O$_{2}$형 압전체에 대한 지금까지의 개발동향을 문헌소개와 함께 필자의 연구결과 일부도 보고하며 아울러 박막화의 가능성도 제시하고자 한다.

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RF 마그네트론 스퍼터링법으로 증착한 B-doped ZnO 박막의 전기 및 광학적 특징 (Electrical and Optical properties of B-doped ZnO films Deposited by RF Magnetron Sputtiering)

  • 임주수;이재신
    • 한국세라믹학회지
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    • 제35권1호
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    • pp.17-22
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    • 1998
  • B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${\times}$1018 cm-3 and 5${\times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.

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Hot-wall MOCVD에 의한 $RuO_2$ 박막의 특성 (Characterization of $RuO_2$ Thin Films by Hot-wall Metal Organic Chemical Vapor Deposition)

  • 신웅철;윤순길
    • 한국세라믹학회지
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    • 제33권9호
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    • pp.969-976
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    • 1996
  • RuO2 thin films were deposited on SiO2(1000 $\AA$)/Si by hot-wall Metal Organic Chemical Vapor Depositon. The crystallinity of RuO2 thin films increased with increasing deposition temperature and the preferred orienta-tion of RuO2 films converted (200) plane to (101) plane with increasing film thicknesses. Such a change in preferred orientation was influenced on the crystallographic structure and the residual stress of RuO2 thin films. The resistivity of the 2700$\AA$-thick RuO2 thin films deposted at 30$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm and they could be applicable to bottom electrodes of high dielectric materials. However the resistivity of RuO2 thin films increased with decreasing film thicknesses. The grain size and the resistivity of RuO2 thin films were densified with increasing the annealing temperature and showed the decrease of resistivity.

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스핀스레이법 의한 $Fe{3-X}-Ni_XO_4$ 페라이트 박막의 제작과 그 특성 (The Properties and Manufacturing of $Fe{3-X}-Ni_XO_4$Films by Spin-Spray Ferrite Method)

  • 김명호;장경욱;부정기
    • 한국전기전자재료학회논문지
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    • 제11권8호
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    • pp.652-657
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    • 1998
  • We have performed spin-spray ferrite plating of $Fe{_3}{-X}-Ni_XO_4$(X=0.17~0.26) films in the temperature region $T=80~95[^{\circ}C]$. A reaction solution and an oxidizing solution were supplied to a reaction chamber by supply pump. The solubility limit of Ni increases as the substrate temperature increase, from X=0.17 at $80[^{\circ}C]$ to X=0.26 at $95[^{\circ}C]$. All the films are polycrystalline with no preferential orientation, and the magnetization exhibits no definite anisotropy. Grain size in the films increases as X increases, reaching $0.87[\mu{m}]$ at X=0.26.

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Preparation of ZnO Thin Films Using Zn/O-containing Single Precursorthrough MOCVD Method

  • Park, Jong-Pil;Kim, Sin-Kyu;Park, Jae-Young;Ok, Kang-Min;Shim, Il-Wun
    • Bulletin of the Korean Chemical Society
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    • 제30권1호
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    • pp.114-118
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    • 2009
  • A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

CoCrTa/Ti 이층막의 하지층기판온도의존성 및 특성개선 (Improvement of characteristics and dependence on underlayer substrate temperature of CoCrTa/Ti double layer)

  • 김용진;성하윤;금민종;손인환;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.492-495
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    • 2000
  • In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.

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