• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1117-1122
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• 1995

The effect of grain boundary structure on zigzag migrtion has been studied. Five kinds of a(2110)-m(1010) diffusion couples with different twist angles by 30$^{\circ}$from a [0001] common direction of each plane were prepared. When chromia (Cr2O3) was added to the diffusion couples by a vapor phase, zigzag migration of the grain boundary occurred. The fraction of zigzag migration did not essentially vary with the twist angle, but the magnitude and migration distance of individual migrating segment varied. The variation of CIGM morphology thus appears to result from the change in grain boundary mobility due to microscopic deviation of grain boundary structure out of a macroscopic grain boundary orientation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.39-39
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• 2003

Molecular dynamics (MD) simulation was performed to study the stress induced grain boundary migration caused by the interaction of dislocations with a gain boundary. The simulation was carried out in a Ni block (295020 atoms) with a ∑ = 5 (210) grain boundary and an embedded atom potential for Ni was used for the MD calculation. Stress was provided by indenting a diamond indenter and the interaction between Ni surface and diamond indenter was assumed to have a fully repulsive force to emulate a faction free surface. Results showed that the indentation nucleated perfect dislocations and the dislocations produced stacking faults in the form of a parallelepiped tube. The parallelepiped tube consisted of two pairs of parallel dislocations with Shockley partials and was produced successively during the penetration of the indenter. The dislocations propagated along the parallelepiped slip planes and fully merged onto the ∑ = 5 (210) grain boundary without emitting a dislocation on the other grain. The interaction of the dislocations with the grain boundary induced the migration of the grain boundary plane in the direction normal to the boundary plane and the migration continued as long as the dislocations merged onto the grain boundary plane. The detailed mechanism of the conservative motion of atoms at the gram boundary was associated with the geometric feature of the ∑ = 5 (210) grain boundary.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.102-109
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• 2000

When PbZrO3 (PZ) and PbTiO3 (PT) particles were scattered on polished surfaces of sintered Pb(Zr0.52Ti0.48)O3 (PZT; Zr/Ti=1.08) and then annealed, the PZT grain boundaries migrated. Near the scattered particles, grain boundaries were corrugated and thus the grain shape changed from a normal one to irregular ones. Especially, near the scattered PZ particles, fast grain growth occurred. In the regions swept by moving grain boundaries, the Zr/Tiratio was measured to be about 1.35 for of PZ scattering and about 0.8 for PT scattering, respectively. This result indicates that the grain boundary migration was induced by alloying of Zr and Ti ions in PZT grains, as in usual diffusion induced grain boundary migration(DIGM). A calculation showed that higher coherency strain energy was induced for PT scattering because of higher alloying of Ti than of Zr.

• Interaction and multiscale mechanics
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• v.1 no.2
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• pp.191-209
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• 2008

In this paper, we model grain boundary evolution based on a multiple level set method. Grain boundary migration under a curvature-induced driving force is considered and the level set method is employed to deal with the resulting topological changes of grain structures. The complexity of using a level set method for modeling grain structure evolution is due to its N-phase nature and the associated geometry compatibility constraint. We employ a multiple level set method with a predictor-multicorrectors approach to reduce the gaps in the triple junctions down to the grid resolution level. A ghost cell approach for imposing periodic boundary conditions is introduced without solving a constrained problem with a Lagrange multiplier method or a penalty method. Numerical results for both uniform and random grain structures evolution are presented and the results are compared with the solutions based on a front tracking approach (Chen and Kotta et al. 2004b).

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.354-359
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• 1999

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.912-918
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• 1992

Microstructure evolution including morphological change in the vicinity of the electrodes, porosity change and grain boundary migration was observed in polycrystalline CoO subject to electric fields at 1100 and 121$0^{\circ}C$ in air. At the cathode, the transported cations react with oxygen in the surrounding to form new lattices, while, at the anode, the reverse reaction occurs leading to lattice annihilation. Lattice formation also takes place at the surface of pores near the cathode inducing pore-filling effect. Grain boundary migration was found bo be enhanced or retarded depending on the field direction. It is therefore implied that the driving force of grain boundary migration is the vectorial sum of the curvature-induced chemical potential gradient and the electric field applied.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.888-892
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• 1992

The chemically induced grain-boundary migration has been studied in MgAl2O4 spinel under ZnO atmosphere. MgAl2O4 compacts been prepared by sintering powder mixture of Al2O3 and MgO at 1$600^{\circ}C$ for 60 h in air. The sintered MgAl2O4 has been heat-treated at 150$0^{\circ}C$ in a ZnO atmosphere. During the heat-treatment grain boundaries have become curved or faceted, and the total area of grain boundaries have increased. In the migrated region, the ZnO content is higher by 6 wt% than that in other regions, indicating that the migration was induced by addition of ZnO. In some shrinking grains, the faceted planes of different grain boundaries for the same grain are parallel to each other. This result provide an experimental support for the coherency strain energy in diffusion layer of the shrinking grain as being the major driving force. Calculated coherency strain energy of MgAl2O4 shows the maximum at {111} planes and the minimum at {100} planes. Although the minimum surface energy is at {111} planes, the faceted moving boundaries are expected to be {100} planes because of lowest driving force for the grain-boundary migration.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.107-110
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• 2007

It has been reported that the permanent strain could happen during recrystallization and grain growth even under the externally applied stress which is much lower than yield stress. In this study, we performed dilatometry experiments under the various compressive stresses and measured the amount of recrystallization and grain growth induced permanent strain. A new constitutive equation based on the concept of boundary migration induced plasticity was suggested to describe the recrystallization and grain growth induced plasticity. This equation was verified by comparing the calculated values with dilatometric experimental data under the various compressive stresses.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.301-305
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• 2016

We investigate proton conduction in a nonstoichiometric ${\Sigma}3$ $BaZrO_3$ (210)[001] tilt grain boundary using density functional theory (DFT). We employ the space charge layer (SCL) and structural disorder (SD) models with the introduction of protons and oxygen vacancies into the system. The segregation energies of proton and oxygen vacancy are determined as -0.70 and -0.54 eV, respectively. Based on this data, we obtain a Schottky barrier height of 0.52 V and defect concentrations at 600K, in agreement with the reported experimental values. We calculate the energy barrier for proton migration across the grain boundary core as 0.61 eV, from which we derive proton mobility. We also obtain the proton conductivity from the knowledge of proton concentration and mobility. We find that the calculated conductivity of the nonstoichiometric grain boundary is similar to those of the stoichiometric ones in the literature.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.83.2-83
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• 2000