• Interaction and multiscale mechanics
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• v.1 no.2
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• pp.191-209
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• 2008

In this paper, we model grain boundary evolution based on a multiple level set method. Grain boundary migration under a curvature-induced driving force is considered and the level set method is employed to deal with the resulting topological changes of grain structures. The complexity of using a level set method for modeling grain structure evolution is due to its N-phase nature and the associated geometry compatibility constraint. We employ a multiple level set method with a predictor-multicorrectors approach to reduce the gaps in the triple junctions down to the grid resolution level. A ghost cell approach for imposing periodic boundary conditions is introduced without solving a constrained problem with a Lagrange multiplier method or a penalty method. Numerical results for both uniform and random grain structures evolution are presented and the results are compared with the solutions based on a front tracking approach (Chen and Kotta et al. 2004b).

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.39-39
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• 2008

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2009.04a
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• pp.38-41
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• 2009

Debonding behavior of symmetric tilt bicrystal interfaces with <100> misorientation axis is investigated through molecular dynamics simulations. FCC single crystal copper is considered in each grain and the model is idealized as a grain boundary under mechanical loading. Embedded-Atom Method potential is chosen to calculate the interatomic forces between atoms. Constrained tensile deformations are applied to a variety of misorientation angles in order to estimate the effect of grain boundary angle on local peak stress. A new parameter of symmetric grain-boundary structure is introduced and refines the correlation between grain boundary angle and local peak stress.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.413-421
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• 2017

In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1738-1740
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A solar cell conversion efficiency was degraded by grain boundary effect in Polycrystalline silicon. To reduce grain boundary effect, we performed a preferential grain boundary etching, $POCl_3$ n-type emitter doping, and then ITO film growth on poly-Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth about $10{\mu}m$. RF magnetron sputter grown ITO films showed a low resistivity of $10^{-4}\Omega-cm$ and high transmittance of 85%. With well fabricated poly-Si solar cells. we were able to achieve as high as 15% conversion efficiency at the input power of 20mW/$cm^2$.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.612-618
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• 2000

The WC/WC grain boundary structure and intergranular segregation in WC-Co and WC-VC-Co cemented carbides were investigated by high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy in order to elucidate whether contiguous boundaries were present or not at the atomic level. Some grain boundaries were separated by liquid phase, while others were contiguous at the atomic level. Cobalt was found to be segregated to WC/WC grain boundaries in WC-Co. Cobalt and vanadium were co-segregated to grain boundaries in WC-VC-Co. The segregation width in both materials was about 6 nm. These results suggest that the vanadium present in contiguous boundaries acts as an effective barrier to the migration of boundaries during sintering and annealing. This could explain the grain growth inhibiting mechanism of VC added to WC-Co.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.255-262
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• 2020

Grain boundaries play a major role in determining device performance, particularly of polysilicon-based photodetectors. Through the post-annealing of as-deposited polysilicon and then, the analysis of electric behavior for a metal-polysilicon-metal (MSM) photodetector, we were able to identify the influence of grain boundaries. A modified model of polysilicon grain boundaries in the MSM structure is presented, which uses a crystalline-interfacial layer-SiO_x layer- interfacial layer-crystalline system that is similar to the Si-SiO₂ system in MOS device. Hydrogen passivation was achieved through a hydrogen ion implantation process and was used to passivate the defects at both interfacial layers. The thin SiO_x layer at the grain boundary can enhance the photosensitivity of an MSM photodetector by decreasing the dark current and increasing the light absorption.

• Journal of Welding and Joining
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• v.5 no.2
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• pp.9-16
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• 1987

Post weld heat treatment (PWHT) is carried out to increase the fracture toughness in heat affected zone(HAZ) and remove the residual stress. There occur some problems such as toughness decreement and stress relief cracking(SRC) in the coarse grained HAZ subjected to the effect of tempering treatment. Especially, embitterment of structure directly relates to the mode of fracture and is appeared as the difference of fracture surface, that is, grain boundary failure. Therefore, in this paper, PWHT was carried out under the stress of 0, 10, 20 and $30kg/cm^2$ to simulate residual stress in HAZ welded by heat input of 10, 30 and 40KJ/cm. Applied stress in weld HAZ during PWHT assisted precipitin of over saturated alloying element in the structure, and grain boundary failure according to welding heat input didn't almost appear at the heat input of 10 KJ/cm, but it appeared from being the applied stress of $30kg/cm^2$ at $30KJ/cm and 20kg/mm^2$ at 40KJ/cm.

• Journal of the Korean Society for Heat Treatment
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• v.5 no.1
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• pp.13-22
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• 1992

The thermal stability of duplex high Mn-steel structure have been investigated using 15%Mn~1.0~2.4%C steels which are composed of ${\gamma}$-and ${\theta}$-phases in the range of temperature from 900 to $1100^{\circ}C$, and time from 50 to 300h. The results are as follows ; 1) The grain growth in single-phase region proceeds by grain boundary migration and the relation between mean radius $\bar{r}$ and annealing time t is described as follows ; $\bar{r}^2-{\bar{r}_0}^2=k_0{\cdot}t$ 2) The grain growth of duplex, (${\gamma}+{\theta}$), strucrure is slower than that single phase because the chemical composition of ${\gamma}$-and ${\theta}$-phases differs esch others. 3) The grain of (${\gamma}+{\theta}$) duplex structure grow slowly in a mode of Ostwald ripening. Because grain boundaries of ${\gamma}$-phase migrate under a restriction of pinning by ${\theta}$-phases. 4) In the duplex structures. the dispersed structures change to the dual-structures, as the volume fraction of the dispersed second-phase increase. Consequently, the growth-law, which is controlled by boundary-diffusion change to that of the volume diffusion-mechanism.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1337-1342
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• 2008

The whisker grows at the plating of a lead frame so that it causes the serious problem like the short. To prove this case, many people have studied the cause and influence of the tin whisker growth. This study explains the grain size affects the growth of the whisker in the lead frame. By these studies about the whisker, the whisker growth is discovered by stresses generated by the intermetallic compound and CTE mismatch in both plating and base metal. The stresses or lattice defect generated in the plating process changes grain structure of plating. Consequently, these various stresses are stabilized by forming unspecified whiskers through lots of grain boundaries. Because the grain boundary is the path of the whisker growth, the smaller grain size exists, the more whiskers grow.