• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.326-331
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• 2007

Large-scale molecular dynamics simulations are performed to verify the deformation characteristics of grain boundaries in nanolithography process. The copper substrate made of 200,000 atoms is constructed by two grains in different crystal orientations using dynamic relaxation method. The grain boundary is located in the middle of the substrate with $45\sim135$ degree angles. The plowing tip is made of diamond-like-carbon atoms in a variety of shapes. In the simulations, the generation, propagation, and accumulation of dislocations are observed inside the substrate. From the numerical results, we address the dynamic behavior of the grain boundaries as well as the frictional characteristics in terms of the morphology of initial grain boundaries.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.348-349
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• 2006

The plastic deformation behavior of cemented carbides is related to the WC grain boundary strength. Ab initio calculations predict that Co and Mn segregate to WC/WC grain boundaries. To experimentally study the effect of Mn, a WC-Co-Mn material was manufactured and compared to a WC-Co material. The microstructure was studied using scanning electron microscopy (SEM), including electron backscatter diffraction (EBSD). Special attention was paid to the WC grain size and the frequency of special low-energy grain boundaries. Mn was found to have negligible effect on both the WC grain growth and the fraction of $\sum2$ WC/WC boundaries in the as-sintered material.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.255-262
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• 2020

Grain boundaries play a major role in determining device performance, particularly of polysilicon-based photodetectors. Through the post-annealing of as-deposited polysilicon and then, the analysis of electric behavior for a metal-polysilicon-metal (MSM) photodetector, we were able to identify the influence of grain boundaries. A modified model of polysilicon grain boundaries in the MSM structure is presented, which uses a crystalline-interfacial layer-SiO_x layer- interfacial layer-crystalline system that is similar to the Si-SiO₂ system in MOS device. Hydrogen passivation was achieved through a hydrogen ion implantation process and was used to passivate the defects at both interfacial layers. The thin SiO_x layer at the grain boundary can enhance the photosensitivity of an MSM photodetector by decreasing the dark current and increasing the light absorption.

• 한국세라믹학회지
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• 제37권1호
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• pp.102-109
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• 2000

When PbZrO3 (PZ) and PbTiO3 (PT) particles were scattered on polished surfaces of sintered Pb(Zr0.52Ti0.48)O3 (PZT; Zr/Ti=1.08) and then annealed, the PZT grain boundaries migrated. Near the scattered particles, grain boundaries were corrugated and thus the grain shape changed from a normal one to irregular ones. Especially, near the scattered PZ particles, fast grain growth occurred. In the regions swept by moving grain boundaries, the Zr/Tiratio was measured to be about 1.35 for of PZ scattering and about 0.8 for PT scattering, respectively. This result indicates that the grain boundary migration was induced by alloying of Zr and Ti ions in PZT grains, as in usual diffusion induced grain boundary migration(DIGM). A calculation showed that higher coherency strain energy was induced for PT scattering because of higher alloying of Ti than of Zr.

• 한국재료학회지
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• 제14권1호
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• pp.35-40
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• 2004

In this study, dissolution characteristics of four types of commercial calcium phosphate ceramics were investigated in distilled water with respect to chemical composition and microstructure. For all samples, no significant damage was observed after 3 days of immersion. Following the 7 days of immersion, surface dissolution of the ceramics containing a crystalline phase susceptible to water such as TCP, even pure hydroxyapatite, was initiated at grain boundaries and the dissolution was extended interior to the material along the grain boundaries. In the considerably dissolved area, there was grain separation followed by the formation of 20 $\mu\textrm{m}$ of cavities. In at least one case, the residual pores on the surface appeared to initiate dissolution. In a dissolved area, a crack during the fracture propagates along the grain boundaries resulting in intergranular fracture, while transgranular fracture occurs in a dense area without significant dissolution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.329-329
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• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• The Korean Journal of Ceramics
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• 제7권2호
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• pp.70-73
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• 2001

Phase transformation of TiSi$_2$ confined in sub-micron area of which the size is around or smaller than the grain size of C49 TiSi$_2$ phase is studied. It has been known that the C49 to C54 phase change is massive transformation that occurs abruptly starting from C54 nuclei located at triple point grain boundaries of C49 phase. When the C49 phase is confined in sub-micron area, however, the massive phase transformation is observed to be hindered due to the lack of the triple point grain boundaries of C49 phase. Heat treatment at higher temperatures starts to decompose the C49 phase, and the resulting decomposed Ti atoms diffuse to, and react with, the underneath Si material to form C54 phase that exhibits spherical interface with silicon. The newly formed C54 grains can also trigger the massive phase transformation to convert the remaining undecomposed C49 grains to C54 grains by serving as nuclei like conventional C54 nuclei located at triple point grain boundaries.

• Corrosion Science and Technology
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• 제9권6호
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• pp.300-309
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• 2010

The influences of sensitization on localized corrosion resistance of 304 stainless steel, were investigated, using micro-dropletcell techniques. Micro-droplet cell allows one to align the micro-electrode to the desired spot of the working electrode and measure directly local current with the potentiodynamic polarization, linear polarization and a.c. impedance. Micro-electrochemical tests were carried out inside of the grain and on grain boundaries separately. It was found that sensitization decreased the pitting potential, increasing corrosion current density around grain boundaries. Galvanic current density was also measured between grain and grain boundaries.

• Nuclear Engineering and Technology
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• 제51권3호
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• pp.769-775
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• 2019

The tensile strength of irradiated 3C-SiC, SiC with artificial point defects, SiC with symmetric tilt grain boundaries (GBs), irradiated SiC with GBs are investigated using molecular dynamics simulations at 300 K. For an irradiated SiC sample, the tensile strength decreases with the increase of irradiation dose. The Young's modulus decreases with the increase of irradiation dose which agrees well with experiment and simulation data. For artificial point defects, the designed point defects dramatically decrease the tensile strength of SiC at low concentration. Among the point defects studied in this work, the vacancies drop the strength the most seriously. SiC symmetric tilt GBs decrease the tensile strength of pure SiC. Under irradiated condition, the tensile strengths of all SiC samples with grain boundaries decrease and converge to certain value because the structures become amorphous and the grain boundaries disappear after high dose irradiation.

• 분석과학
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• 제5권1호
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• pp.121-126
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• 1992

GaAs ${\Sigma}=19$, [110] tilt grain boundary의 구조를 투과전자현미경을 이용하여 연구하였다. Higher-Order Laue-Zone(HOLZ) 빔들과 {200} 빔과의 dynamical coupling 결과를 검토하여 입계 양쪽 각각의 입자(grain) 내 Ga-As의 상대적 위치(방향성)를 결정하였으며, 두 입자 사이에는 inversion symmetry가 결합되지 않은 ${\Sigma}=19$ coincidence에 해당하는 교차각이 있었다. 계면은 $\{331\}_A/\{331\}_B$, [110] 결정면을 따라서 발생하는 경향이 강함을 관측했다. 이 facet에서의 원자구조 및 격자이동 등을 고분해 투과전자현미경을 이용하여 밝혔다. 5-, 7-, 그리고 6-member ring의 조합으로 되어 있는 단위를 계면원자구조 model로 제시했다.