• 제목/요약/키워드: Grain Structure

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Analysis of the effect on the whisker growth as grain size of plating and base metal (Plating 및 Base metal의 Grain size에 따른 Whisker 성장 영향 분석)

  • Kim, Su-Jin;Chang, Mi-Soon;Kwack, Kae-Dal
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.1337-1342
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    • 2008
  • The whisker grows at the plating of a lead frame so that it causes the serious problem like the short. To prove this case, many people have studied the cause and influence of the tin whisker growth. This study explains the grain size affects the growth of the whisker in the lead frame. By these studies about the whisker, the whisker growth is discovered by stresses generated by the intermetallic compound and CTE mismatch in both plating and base metal. The stresses or lattice defect generated in the plating process changes grain structure of plating. Consequently, these various stresses are stabilized by forming unspecified whiskers through lots of grain boundaries. Because the grain boundary is the path of the whisker growth, the smaller grain size exists, the more whiskers grow.

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Stucture and Intergranular Segregation of WC/WC Grain Boundaries in WC-Based Cemented Carbides (WC기 초경합금중 WC/WC界面의 구조와 입계편석)

  • Sin, Sun-Gi
    • Korean Journal of Materials Research
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    • v.10 no.9
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    • pp.612-618
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    • 2000
  • The WC/WC grain boundary structure and intergranular segregation in WC-Co and WC-VC-Co cemented carbides were investigated by high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy in order to elucidate whether contiguous boundaries were present or not at the atomic level. Some grain boundaries were separated by liquid phase, while others were contiguous at the atomic level. Cobalt was found to be segregated to WC/WC grain boundaries in WC-Co. Cobalt and vanadium were co-segregated to grain boundaries in WC-VC-Co. The segregation width in both materials was about 6 nm. These results suggest that the vanadium present in contiguous boundaries acts as an effective barrier to the migration of boundaries during sintering and annealing. This could explain the grain growth inhibiting mechanism of VC added to WC-Co.

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Transformation Behavior on Heat Treatment Condition in Grain-Refined Cu-Zn-Al Shape Memory Alloy (결정립 미세화된 Cu-Zn-Al 형상기억합금의 열처리 조건에 따른 변태거동)

  • Kang, J.W.;Jang, W.Y.;Yang, G.S.
    • Journal of the Korean Society for Heat Treatment
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    • v.4 no.4
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    • pp.34-43
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    • 1991
  • A small amount of misch metal and/or Zr was added as a dopant to 70.5wt----Cu-26wt----Zn-3.5wt----Al shape memory alloy in order to study the effect of grain refinement and heat treatments on the transformation behavior, stabilization of martensite, and shape memory ability. It was found that the addition of misch metal and Zr was very effective for reducing the grain size. The fracture mode has been changed from intergranular brittle fracture to ductile fracture with void formation and coalescence by the addition of misch metal and Zr. Aging of the ${\beta}$-phase decreases the $M_s$ temperature, but that of the martensite phase increases the $A_s$ temperature. The hysteresis of transformation temperature ${\Delta}T(A_s-M_s)$ has an increasing tendancy by grain refinement. The crystal structure of martensite was identified as monoclinic structure. As the grain size decreased, martensite stabilization more easily occured and the shape, memory ability has been reduced by the grain size refined.

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Dislocation structure in hot-pressed polycrystalline $TiB_{2}$ (고온가압성형된 다결정 $TiB_{2}$내에서 전위구조)

  • Kwang Bo Shim;Brian Ralph;Keun Ho Auh
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.194-202
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    • 1996
  • Transmission electron microscopy has been used to characterize the dislocation structure in hot-pressed titanium diboride. The thin foil samples were prepared by the conventional ion beam thinning technique and reveal the main features associated with the dislocations ; low-angle grain boundaries with dislocation arrays, high-angle grain boundaries with ledges/steps on the boundary planes. The ledges/steps on the grain boundaries were characterized as the origin of defect structures such as dislocation formation or crack propagation near grain boundaries. A fraction of the high angle grain boundaries contained periodic arrays of grain boundary dislocations. The Burger's vectors of the dislocations in the $TiB_{2}$specimens were determined.

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Application of Solifidification Grain Structure Simulation for the Casting by Cellular Automaton Method (Cellular Automaton법을 이용한 주물의 응고조직 시뮬레이션에의 적용)

  • Cho, In-Sung;Ohnaka, Itsuo
    • Journal of Korea Foundry Society
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    • v.21 no.1
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    • pp.41-47
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    • 2001
  • Computer simulation of the solidification grain structure was applied to the casting process by using CA-DFDM. The Direct Finite Difference Method (DFDM) for temperature field calculation and latent heat treatment was coupled with Cellular Automaton (CA) method for the grain growth. 2-dimensional simulation of the solidification grain structures and calculation of the concentration fields were carried out and the calculated concentration distributions were compared with exact solution. Castings having complex geometries such as turbine blades were applied for 3-dimensional CA-DFDM. Effects of grain selector and mold extraction speed on the solidification grain structures in the turbine blade were examined.

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Microstructures and Mechanical Properties of DA Alloy 718 (직접시효 처리된 Alloy718 합금의 미세조직과 기계적 특성)

  • Eum C. Y.;Yeom J. T.;Park N. K.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2004.10a
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    • pp.222-225
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    • 2004
  • Alloy 718 is normally used for the stationary and rotating parts of gas turbines due to its excellent combination of high temperature mechanical properties, formability and weldability. The mechanical properties of the Alloy 718 depend very much on grain size, as well as the strengthening phases, ${\gamma}'\;and\;{\gamma}'$. Direct aging is normally used to enhance tensile strengths at high temperatures. The grain structure of the superalloy components is mainly controlled during thermo-mechanical process by the dynamic, meta-dynamic recrystallization and grain growth. In this study, the influence of grain structure and heat treatment on tensile properties of direct-aged Alloy 718 was evaluated.

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Microstructures and Mechanical Behavior of 2024 Al Alloys Deformed by Equal Channel Angular Pressing (2024 Al 합금의 ECAP 공정에 따른 미세조직 변화와 강도특성)

  • Kim, Seon-Hwa;Choi, Yong-Lak
    • Korean Journal of Materials Research
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    • v.16 no.1
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    • pp.68-74
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    • 2006
  • 2024 Al alloys were severely deformed by equal channel angular pressing(ECAP) to obtain an ultrafine grain structure. The more deformation amount increased, the more grain size decreased. Most of the grain structure were changed from elongated to equiaxed shape with increasing pass number. The morphology of S' phases was also changed from rod-type to spherical type. The grain size of 6 passed specimen was 100 to 200 nm, and the size of S' phases was about 10 nm in the microstructure. XRD measurements have revealed that the texture formed by plastic deformation disappeared in the 6 passed specimen. SP test results described that the start of crack propagation occurred at the transition zone between plastic bending and membrane stretching because of small elongation. The maximum strength of ECA pressed specimen increased 1.9 GPa to 2.9 GPa with increasing pass number.

A Study on the Grain Growth and Structure Properties of LPCVD Films Using $Si_2H_6$ GAS ($Si_2H_6$를 이용한LPCVD 실리콘 박막의 결정 성장 및 구조적 성질에 관한 연구)

  • 홍찬희;박창엽
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.40 no.7
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    • pp.670-674
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    • 1991
  • This paper presents the material properties of LPCVD silicon films formed using Si2H6 gas at various deposition temperatures. To study the structural properties depending on the deposition temperature, XRD, EBD and TEM analyses were used. The maximum grain size in this experiment was obtained at the deposition temperature of 485ø C. It is discussed that LPCVD films formed below the deposition temperature of 485ø C are promising for low temperature TFT applications. The enhancement of the film characteristics results from the reduction of grain boundary density. We also observed that the film properties of Si2H6 at 600ø C was quite different from those of Si H4 at 600ø C. It has shown that the grain structure from a TEM analysis was elliptical and not dependent on the deposition temperature.

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A fundamental study on semi-solid forging with light and hardly formable materials (난가공성 경량소재의 반용융 단조에 관한 기초 연구)

  • Choi, J.C.;Cho, H.Y.;Min, G.S.;Park, H.J.;Choi, J.U.
    • Journal of the Korean Society for Precision Engineering
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    • v.13 no.7
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    • pp.29-35
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    • 1996
  • For semi-solid forging with aluminuim alloys, it is required to develope the globular grain structure. It was studide that cold upsetting ration in SIMA process has effect on the globularization of grain structure. Globular microstructure was generated without cold upsettings for commercial aluminium alloys. In the case of A12024, the range of grain size was 40 .approx. 50 .mu. m. The grain growth in growth in globular microstructure depend on heating time. Spur gear was forged in semi-solid state to investigate the forging condition for A12024 with hydraulic press.

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The Non-Linear Characteristics of ZnO Devices. (ZnO 소자의 비직선 특성)

  • Hong, Kyung-Jin;Chon, Kyung-Nam;Cho, Jae-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05a
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    • pp.43-46
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    • 2001
  • The ZnO devices using semiconductor properties, to include $MnO_2$, $Y_2O_3$ and other material, was fabricated by $Sb_2O_3$ mol ratio from 1 to 4 [mol%]. The non-linearity factor was calculated by setting current to be $1[mA/cm^2]$ and $10[mA/cm^2]$. The spinel structure was fonned by $Sb_2O_3$ addition and it was depressed the ZnO grain formation. The grain growing was controlled by spinel structure that has improved the non-linearity factors. The breakdown voltage characteristics of semiconductor devices to increase with $Sb_2O_3$ was increased in voltage-current. The non-linearity value of ZnO semiconductor devices was 45 over.

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