• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.777-783
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• 1994

Oxidation behavior of hot-pressed silicon nitride ceramics with various sintering additives has been investigated. The weight gain of each specimens has shown in the range of 0.11 mg/$\textrm{cm}^2$ ~3.4 mg/$\textrm{cm}^2$ at 140$0^{\circ}C$ for 192 h and eleven compositions have shown good oxidation resistance with the weight gain below 0.5 mg/$\textrm{cm}^2$. The oxidation rate has been shown to obey the parabolic rate law and the oxidized surface has consisted of $\alpha$-cristobalite and M2Si2O7 or MSiO3 (M=rare earth or transition metals) phase. The oxidation rate of each specimens has related to the eutectic temperature between additive oxide and SiO2, and ionic radius of additive oxides, respectively. From the above results, it could be concluded that the oxidation behavior of hot pressed silicon nitride is dominated by the high temperature properties of grain boundary glassy phase and the high temperature properties of grain boundary glassy phase are affected by the ionic radius of additive oxides.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.612-618
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• 2000

The WC/WC grain boundary structure and intergranular segregation in WC-Co and WC-VC-Co cemented carbides were investigated by high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy in order to elucidate whether contiguous boundaries were present or not at the atomic level. Some grain boundaries were separated by liquid phase, while others were contiguous at the atomic level. Cobalt was found to be segregated to WC/WC grain boundaries in WC-Co. Cobalt and vanadium were co-segregated to grain boundaries in WC-VC-Co. The segregation width in both materials was about 6 nm. These results suggest that the vanadium present in contiguous boundaries acts as an effective barrier to the migration of boundaries during sintering and annealing. This could explain the grain growth inhibiting mechanism of VC added to WC-Co.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1159-1160
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• 2006

For pure Molybdenum carburized in mixed gases of argon and carbon monoxide, microstructural observations were carried out. X-ray diffraction analysis for carburized specimens revealed that brittle ${\alpha}-Mo_2C$- layer hardly formed in the case of low carbon monoxide concentration. Fracture strength of the specimen carburized at 1673 K for 16 h is about 550 MPa higher than that of the un-carburized specimen. SEM observation revealed that with increasing carburizing temperature, the region demonstrating a transgranular fracture mode progressed towards the center of specimen. This result means that the grain boundaries were strengthened by the grain boundary diffusion of carbon and the strength of grain boundaries exceeded that of grain itself.

• Transactions of Materials Processing
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• v.14 no.8 s.80
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• pp.681-688
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• 2005

The high-temperature deformation mechanisms of a ${\alpha}+{\beta}$ titanium alloy (Ti-6Al-4V), near-a titanium alloy (Ti-6.85Al-1.6V) and a single-phase a titanium alloy (Ti-7.0Al-1.5V) were deduced within the framework of inelastic-deformation theory. For this purpose, load relaxation tests were conducted on three alloys at temperatures ranging from 750 to $950^{\circ}C$. The stress-versus-strain rate curves of both alloys were well fitted with inelastic-deformation equations based on grain matrix deformation and grain-boundary sliding. The constitutive analysis revealed that the grain-boundary sliding resistance is higher in the near-${\alpha}$ alloy than in the two-phase ${\alpha}+{\beta}$ alloy due to the difficulties in relaxing stress concentrations at the triple-junction region in the near-${\alpha}$ alloy. In addition, the internal-strength parameter (${\sigma}^*$) of the near-${\alpha}$ alloy was much higher than that of the ${\alpha}+{\beta}$ alloy, thus implying that dislocation emission/ slip transfer at ${\alpha}/{\alpha}$ boundaries is more difficult than at ${\alpha}/{\beta}$ boundaries.

• Journal of Technologic Dentistry
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• v.34 no.4
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• pp.345-352
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• 2012

Purpose: The age-hardening mechanism of an Au-Ag-Cu-Pt-Zn alloy for crown and bridge fabrication was investigated by means of hardness test, X-ray diffraction study and field emission scanning electron microscopic observation. Methods: Before hardness testing, the specimens were solution treated and then were rapidly quenched into ice brine, and were subsequently aged isothermally at $400-450^{\circ}C$ for various periods of time in a molten salt bath and then quenched into ice brain. Hardness measurements were made using a Vickers microhardness tester. The specimens were examined at 15 kV using a field emission scanning electron microscope. Results: By the isothermal aging of the solution-treated specimen at $450^{\circ}C$, the hardness increased rapidly in the early stage of aging process and reached a maximum hardness value. After that, the hardness decreased slowly with prolonged aging. However, the relatively high hardness value was obtained even with 20,000 min aging. By aging the solution-treated specimen, the f.c.c. Au-Ag-rich ${\alpha}_0$ phase was transformed into the Au-Ag-rich ${\alpha}_1$ phase and the AuCu I ordered phase. Conclusion: The hardness increase in the early stage of aging process was attributed to the formation of lattice strains by the precipitation of the Cu-rich phase and then subsequent ordering into the AuCu I-type phase. The decrease in hardness in the later stage of aging process was due to the release of coherency strains by the coarsening of tweed structure in the grain interior and by the growth and coarsening of the lamellar structure in the grain boundary. The increase of inter-lamellar space contributed slightly to the softening compared to the growth of lamellar structure toward the grain interior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.34-37
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• 2001

In this study, the capacitance-voltage properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.20)-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1480~150$0^{\circ}C$ and 4 hours, respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C<$\pm$10%. The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.ulating layers.s.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.366-370
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• 2007

Silicon nitride ($Si_3N_4$) ceramics have been considered for various components of nuclear power plants such as the mechanical seal of a reactor coolant pump (RCP), the guide roller for a control rod drive mechanism (CRDM), and a seal support, etc. Corrosion behavior of $Si_3N_4$ ceramics in a high-temperature and high-pressure water must be elucidated before they can be considered as components for nuclear power plants. In this study, the corrosion behaviors of $Si_3N_4$ ceramics containing MgO and $Al_2O_3$ as sintering aids were investigated at a hydrothermal condition ($300^{\circ}C$, 9.0 MPa) in pure water and 35 ppm LiOH solution. The corrosion reactions were controlled by a diffusion of the reactive species and/or products through the corroded layer. The grain-boundary phase was preferentially corroded in pure water whereas the $Si_3N_4$ grain seemed to be corroded at a similar rate to the grain-boundary phase in LiOH solution. Flexural strengths of the $Si_3N_4$ ceramics were significantly degraded due to the corrosion reaction. Results of this study imply that a variation of the sintering aids and/or a control (e.g., crystallization) of the grain-boundary phase are necessary to increase the corrosion resistance of $Si_3N_4$ ceramics in a high-temperature water.

• Applied Microscopy
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• v.45 no.1
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• pp.32-36
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• 2015

The microstructural features of FeCoCrNi, FeCoCrNiAl and FeCoCrNiSix (x=0, 5, 10, 15, 20) alloys have been investigated in the present study. The microstructure of FeCoCrNi alloy changes dramatically with equiatomic addition of Al. The fcc irregular shaped grain structure in the as-cast FeCoCrNi alloy changes into the bcc interconnected structure with phase separation of Al-Ni rich and Cr-Fe rich phases in the as-cast FeCoCrNiAl alloy. The microstructure of FeCoCrNi alloy changes with the addition of Si. With increasing the amount of Si, the fcc structure of the grains is maintained, but new phase containing higher amount of Si forms at the grain boundary. As the amount of Si increases, the fraction the Si-rich grain boundary phase increases.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.396-403
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• 1996

In this paper, the (S $r_{0.85}$.C $a_{0.15}$)Ti $O_{3}$ of paraelectric grain boundary layer (GBL) ceramics were fabricated, and the analysis of microstructuye and the thermally stimulated current(TSC) were investigated for understanding effects of GBL's interfacial phenomenon on variations of electrical properties. As a result, the three peaks of .alpha., .alpha. and .betha. were obtained at the temperature of -20 [.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20[.deg. C] appears to show up by detrap of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase. and second phase.