• Nuclear Engineering and Technology
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• 제41권8호
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• pp.1109-1114
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• 2009

The evolution of a high burnup structure (HBS) in a light water reactor (LWR) $UO_2$ fuel was simulated using the Potts model. A simulation system for the Potts model was defined as a two-dimensional triangular lattice, for which the stored energy was calculated from both the irradiation damage of the $UO_2$ matrix and the formation of a grain boundary in the newly recrystallized small HBS grains. In the simulation, the evolution probability of the HBS is calculated by the system energy difference between before and after the Monte Carlo simulation step. The simulated local threshold burnup for the HBS formation was 62 MWd/kgU, consistent with the observed threshold burnup range of 60-80 MWd/kgU. The simulation revealed that the HBS was heterogeneously nucleated on the intergranular bubbles in the proximity of the threshold burnup and then additionally on the intragranular bubbles for a burnup above 86 MWd/kgU. In addition, the simulation carried out under a condition of no bubbles indicated that the bubbles played an important role in lowering the threshold burnup for the HBS formation, thereby enabling the HBS to be observed in the burnup range of conventional high burnup fuels.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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• pp.75-81
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• 2003

This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1{\varepsilon}_2)$ has larger peak values as it’s thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.73-79
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• 2002

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국세라믹학회지
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• 제39권10호
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• pp.994-1000
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• 2002

고상 반응법을 통해 $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ 페롭스카이트계 산소투과 분리막을 제조하였으며, 미세구조에 따른 산소투과 특성 및 기계적 특성을 고찰하였다. 분리막의 미세구조는 소결온도 및 소결 유지시간을 달리함으로써 조절하였으며, 미세구조에 따른 평균 입경 및 상대밀도의 변화를 평가하였다. 입계 분율의 감소에 따라 산소투과유속이 증가하는 경향을 나타내었으며, 본 연구에서 고찰한 소결조건 중에서는 1300${\circ}C$에서 10시간 유지하여 제조한, 상대밀도가 높고 비교적 입경이 조대한 분리막 시편의 경우, 최대 0.37 ml/$cm^2$${\cdot}$min의 산소투과유속이 특정되었다. 파괴강도는 소결체의 상대밀도에 의존적이었으며, 파괴인성은 결정립의 크기에 따라 증가하는 경향을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.205.2-205.2
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• 2014

The effects of ion beam mixing of a SiC film coated on super alloys (hastelloy X substrates) were studied, aiming at developing highly sustainable materials at above $900^{\circ}C$ in decomposed sulfuric acid gas (SO2/SO3/H2O) channels of a process heat exchanger. The bonding between two dissimilar materials is often problematic, particularly in coating metals with a ceramics protective layer. A strong bonding between SiC and hastelloy X was achieved by mixing the atoms at the interface by an ion-beam: The film was not peeled-off at ${\geq}900^{\circ}C$, confirming excellent adhesion, although the thermal expansion coefficient of hastelloy X is about three times higher than that of SiC. Instead, the SiC film was cracked along the grain boundary of the substrate at above $700^{\circ}C$. At ${\geq}900^{\circ}C$, the film was crystallized forming islands on the substrate so that a considerable part of the substrate surface could be exposed to the corrosive environment. To cover the exposed areas and cracks multiple coating/IBM processes have been developed. An immersion corrosion test in 80% sulfuric acid at $300^{\circ}C$ for 100 h showed that the weight retain rate was gradually increased when increasing the processing time.

• Journal of Welding and Joining
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• 제7권3호
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• pp.28-35
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• 1989

It was reported that the toughness for welded region was influenced by various factors such as the gradient for prior austenite grain size, the variation of microhardness and the characteristic microstructure depending on distance from the fusion boundary. Therefore, in order to evaluate the fracture strength of the weldment in which the microstructures change continuously, it is important to assess the peculiar strength of each microstructure in welded region. It was known that the small punch(SP) test technique which was originally developed to study the irradiation damage effect for the structures of nuclear power plant was also useful to investigate the strength evaluating of nonhomogeneous materials. In this paper, by means of a small punch test technique the possibility of evaluating strength of parent and welded region in SS41 and SM53B steels was investigated. The obtained results are summerized as follows: 1) The small punch test which showed markedly the ductile-brittle transition behavior in this experiment may be applied to evaluation for the fracture strength of welded region. 2) It was shown that the ductile-brittle regime lied in Region III(plastic membrane stretching region) of the flow characteristics observed in SP test. 3) The SP test technique which shows a more precipitous energy change transition behavior than the other test technique is able to estimate the more precise transition temperature. 4) It could be seen that in comparision with the structure of parent the structure of weld HAZ in SS41 steel was improved while it in SM53B steel was deteriorated.

• 방사성폐기물학회지
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• 제4권4호
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• pp.321-328
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• 2006

한국원자력연구소 내 부지에 건설된 지하처분연구시설(KURT, KAERI Underground Research Tunnel)에 대한 기초적인 광물 풍화 및 지화학적 특성을 살펴보았다. 분석 대상 시료는 건설 과정중에 노출된 암석에 대해서 화학적 풍화에 따른 암석의 미시적인 변화를 현미경 및 화학성분 분석 등을 통해 관찰하였다. 풍화가 진행된 화강암의 경우 암석을 구성하고 있는 광물들 주변에 미세하고 작은 균열들이 발달하였다. 특히, 장석 광물의 풍화가 특징적으로 관찰되었고 광물 용해에 따른 Ca 성분의 선택적 용출 현상이 심하였다. 또한, $Fe^{2+}$를 함유한 흑운모의 용해에 의한 $Fe^{2+}$성분의 용출에 의해 주변 광물의 미세균열에 이차생성물로 철산화물 침전이 두드러졌다. 광물내부로 부터 발생된 미세균열은 풍화가 진행되면서 점차 그 규모가 커지고 grain boundary를 따라 매우 먼 거리까지 확장되는 특성을 보여 주었다. 신선한 암석 이 풍화됨에 따라 암석 내에 존재하거나 용출된 화학 성분들은 이러한 미세 균열들을 통해 새로운 이차광물 생성에 관여하거나 그들과 상호 반응하면서 이동하는 것으로 추정된다.

• Current Photovoltaic Research
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• 제8권1호
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• pp.27-32
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• 2020

CuS thin films were deposited on glass substrates at room temperature by RF magnetron sputtering. The structural and optical properties of CuS thin films grown by varying RF-power from 40 W to 100 W were studied. From the XRD analysis, we confirmed hexagonal crystal structures grown in the preferred orientation of the (110) plane in all CuS thin films, and the intensity of the main diffraction peak increased in proportion to the increase of RF-power. In the case of CuS thin film deposited at 40W, small-sized particles formed a thin and dense surface morphology with narrow pore spacing, relatively. As the power increased, the grain size and grain boundary spacing increased sequentially. The peaks for the binding energy of Cu 2p_3/2 and Cu 2p_1/2 were determined at 932.1 eV and 952.0 eV, respectively. The difference in binding energy for the Cu²⁺ states was the same at 19.9 eV regardless of process parameters. The transmittance and band gap energy in the visible region tended to decrease with increasing sputtering powers.

• 한국수소및신에너지학회논문집
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• 제20권6호
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• pp.505-511
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• 2009

The hydriding and electrochemical characteristics of Zr-based $AB_2$ alloy produced by gas atomization have been extensively examined. For the particle morphology of the as-cast and gas-atomized powders, it can be seen that the mechanically crushed powders are irregular, while the atomized powder particles are spherical. The increase of jet pressure of gas atomization process results in the decrease of hydrogen storage capacity and the slope of plateau pressure significantly increases. TEM and EDS studies showed the increase of jet pressure in the atomization process accelerated the phase separation within grain of the gas-atomized alloy, which brought about a poor hydrogenation property. However, the gas-atomized $AB_2$ alloy powders produced by jet pressure of 50 bar kept up the reversible $H_2$ storage capacity and discharge capacity similar to the mechanically crushed particles. In addition, the electrode of gas-atomized Zr-based $AB_2$ alloy of 50 bar showed improved cyclic stability over that of the cast and crushed particulate, which is attributed to the restriction of crack propagation by grain boundary and dislocation with ch/discharging cycling.

• 마이크로전자및패키징학회지
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• 제24권2호
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• pp.49-53
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• 2017

Cl 불순물 도핑에 따른 $SnSe_2$ 이차원 전자소재의 고온(300~450 K) 전도 물성 변화를 고찰하였다. 고상합성법을 통하여, 도핑이 없는 $SnSe_2$ 소재와 Cl이 도핑된 $SnSe_{1.994}Cl_{0.006}$ 소재를 합성하였으며, X선 회절 실험을 통하여, 두 재료 모두 불순물 없는 단일상이 형성되었음을 확인하였다. 비저항의 온도의존성 측정을 통하여, 전기 전도 mechanism이 Cl 도핑에 의해 hopping 전도에서 축퇴 전도로의 전이가 일어남을 관찰할 수 있었으며, 홀효과 측정을 통해 그러한 전도 mechanism의 전이가, Cl의 효과적인 donor 역할에 따른 자유전자의 농도 증가에서 기인한 것임을 확인하였다. 온도에 따른 전자이동도의 변화 분석을 통하여, 도핑이 없는 $SnSe_2$의 고온 전기 전도는 grain boundary 산란이 지배적인 영향을 미치는 반도체 전도 특성을 보이는 반면, Cl 도핑에 따라 grain boundary 산란 효과가 저하되는 금속 전도 특성을 보인다는 것을 알 수 있었다.