• Title/Summary/Keyword: Graded layer

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DC Characteristics of AIGaAs/GaAs HBTs with different Emitter/Base junction structures (접합구조에 따른 AIGaAs/GaAs HBT의 DC 특성에 관한 연구)

  • 김광식;유영한;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.67-70
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    • 2000
  • In this paper, all SCR recombination currents including setback and graded layer's recombination currents are analytically introduced for the first time. Different emitter-base structures are tested to prove the validity of the model. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. In this paper, recombination current model included setback layer and graded layer is proposed. New recombination current model also includes abrupt heterojunction's recombination current model. In this paper, new recombination current model analytically explains effects of setback layer and graded layer.

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Electrical Characteristics of AIGaAs/GaAs HBTs with different Emitter/Base junction structures (접합구조에 따른 AIGaAs/GaAs HBT의 전기적 특성에 관한 연구)

  • 김광식;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.63-66
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    • 2000
  • In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

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Bending and free vibration analysis of a smart functionally graded plate

  • Bian, Z.G.;Ying, J.;Chen, W.Q.;Ding, H.J.
    • Structural Engineering and Mechanics
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    • v.23 no.1
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    • pp.97-113
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    • 2006
  • A simply supported hybrid plate consisting of top and bottom functionally graded elastic layers and an intermediate actuating or sensing homogeneous piezoelectric layer is investigated by an elasticity (piezoelasticity) method, which is based on state space formulations. The general spring layer model is adopted to consider the effect of bonding adhesives between the piezoelectric layer and the two functionally graded ones. The two functionally graded layers are inhomogeneous along the thickness direction, which are approached by laminate models. The effect of interlaminar bonding imperfections on the static bending and free vibration of the smart plate is discussed in the numerical examples.

Contact analysis in functionally graded layer loaded with circular two punches

  • Muhammed T. Polat;Alper Polat
    • Computers and Concrete
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    • v.33 no.1
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    • pp.13-25
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    • 2024
  • In this study, contact analysis in a functionally graded (FG) layer loaded with two circular punches is solved using the finite element method (FEM). The problem is consisted of a functionally graded layer that resting on an elastic semi-infinite plane and is loaded with two rigid punches of circular geometry. External loads P and Q are transferred to the layer via two rigid punches. The finite element model of the functionally graded layer is created using the ANSYS package program and a 2-dimensional analysis of the problem is analyzed. The contact lengths, obtained as a result of the analysis are compared with the analytical solution in the literature. In the study, the effects of parameters such as distances between punches, loads, inhomogenity parameter on contact zones, initial separation loads and distances, normal stresses, stresses across depth and contact stresses are investigated. As a result, in this study, it can be said that the magnitude of the stresses occurring in the FG layer is less than the homogeneous layer, therefore the life of FG materials will be longer than the homogeneous layer. When the distance between the punches is 2.25, the initial separation distance is 6.98, and when the distance between the punches is 4, the initial separation distance decreases to 6.10. In addition, when the load increased in the second punch, the initial separation load decreased from 55 to 18. The obtained results are presented in the form of graphs and tables.

Development of Blue Organic Light-emitting Diodes(OLEDs) Due to Change in Mixed Ratio of HTL:EML(DPVBi:NPB) Layers (HTL:EML(DPVBi:NPB)층의 조성비 변화에 따른 청색 유기 발광 소자 개발)

  • Lee, Tae-Sung;Lee, Byoung-Wook;Hong, Chin-Soo;Kim, Chang-Kyo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.9
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    • pp.853-858
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    • 2008
  • The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

Fabrication of Graded-Boundary Ni/steel Material by Electron Beam (전자빔에 의한 조성구배계면 Ni/Steel 합금재료의 개발)

  • 김병철;김도훈
    • Laser Solutions
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    • v.2 no.2
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    • pp.27-33
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    • 1999
  • Electron beam was applied on the low carbon steel in order to fabricate Metal/Metal GBM(Graded Boundary Material). Ni sheet was placed on the steel substrate. The electron beam was irradiated on the surface and produced a homogeous alloyed layer. Sequential repetition of electron beam treatments for 4 times resulted in 8mm thick graded layer. To determine each layers property, optical microscopy, XRD, microhardness tester and EDS were used. The residual stress was measured by the low angle x-ray diffraction method. The graded boundary layer was stepwise profile, but Ni content incresed up to 80 wt% and Fe content decreased 20 wt% near surface. Each layers microstructure and hardness varied by different Fe/Ni composition. The compressive residual stress was induced by martensite transformation in the 1st and End layers and the shrinkage cracks were formed in graded layer by rapid cooling.

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Application the mechanism-based strain gradient plasticity theory to model the hot deformation behavior of functionally graded steels

  • Salavati, Hadi;Alizadeh, Yoness;Berto, Filippo
    • Structural Engineering and Mechanics
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    • v.51 no.4
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    • pp.627-641
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    • 2014
  • Functionally graded steels (FGSs) are a family of functionally graded materials (FGMs) consisting of ferrite (${\alpha}$), austenite (${\gamma}$), bainite (${\beta}$) and martensite (M) phases placed on each other in different configurations and produced via electroslag remelting (ESR). In this research, the flow stress of dual layer austenitic-martensitic functionally graded steels under hot deformation loading has been modeled considering the constitutive equations which describe the continuous effect of temperature and strain rate on the flow stress. The mechanism-based strain gradient plasticity theory is used here to determine the position of each layer considering the relationship between the hardness of the layer and the composite dislocation density profile. Then, the released energy of each layer under a specified loading condition (temperature and strain rate) is related to the dislocation density utilizing the mechanism-based strain gradient plasticity theory. The flow stress of the considered FGS is obtained by using the appropriate coefficients in the constitutive equations of each layer. Finally, the theoretical model is compared with the experimental results measured in the temperature range $1000-1200^{\circ}C$ and strain rate 0.01-1 s-1 and a sound agreement is found.

Effect of MoO3 Thickness on the Electrical, Optical, and structural Properties of MoO3 Graded ITO Anodes for PEDOT:PSS-free Organic Solar Cells

  • Lee, Hye-Min;Kim, Seok-Soon;Chung, Kwun-Bum;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.478.1-478.1
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    • 2014
  • We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.

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Thermo-mechanical bending response with stretching effect of functionally graded sandwich plates using a novel shear deformation theory

  • Saidi, Hayat;Houari, Mohammed Sid Ahmed;Tounsi, Abdelouahed;Bedia, El Abbas Adda
    • Steel and Composite Structures
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    • v.15 no.2
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    • pp.221-245
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    • 2013
  • This paper presents an analytical solution to the thermomechanical bending analysis of functionally graded sandwich plates by using a new hyperbolic shear deformation theory in which the stretching effect is included. The modulus of elasticity of plates is assumed to vary according to a power law distribution in terms of the volume fractions of the constituents. The core layer is still homogeneous and made of an isotropic ceramic material. The effects of functionally graded material (FGM) layer thickness, volume fraction index, layer thickness ratio, thickness ratio and aspect ratio on the deflections and stresses of functionally graded sandwich plates are investigated.

Examination of contact problem between functionally graded punch and functionally graded layer resting on elastic plane

  • Polat, Alper
    • Structural Engineering and Mechanics
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    • v.78 no.2
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    • pp.135-143
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    • 2021
  • In this study, continuous contact problem in the functionally graded (FG) layer loaded with a FG flat punch resting on the elastic semi-infinite plane was analyzed by the finite element method (FEM). It was assumed that the shear modulus and density of the layer and punch varied according to exponentially throughout their depth. FG layer's weight was included to the problem and additionally all surfaces were considered as frictionless. Analysis of FG materials was performed with a special macro which was added to the ANSYS program. Firstly, the shear modulus of the punch was considered to be very rigid and the results of initial separation load (λcr) and distance (xcr) were compared with the analytical solution. Afterwards, results obtained from the contact analysis made according to the inhomogeneity parameters (β, γ) between FG punch-FG layer which had been unprecedented in the literature were discussed. As a result, FG punch's stress values at the punch edges where stress accumulations occurred were found to be smaller than the rigid punch. The security of the structure, longer life of the material and ease of production are directly related to the reduction of the stress values. The results obtained in this study are important in this respect. Also this work is the first study that investigates the effect of FG punch on the FG layer.