• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.85-88
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• 1999

We fabricated resistive superconducting fault current lmiters based on YBa$_2$Cu$_3$O$_{7}$ thin films and investigated their quench propagation characteristics. The YBa$_2$Cu$_3$O$_{7}$ film was coated with a gold layer and patterned into 1 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents of various fault angles and amplitudes. The quench propagation characteristics were explained based on the heat transfer within the film as well as between the film and the surrounding liquid nitrogen. The quench completion time strongly depended on the potential fault current. It was 1 msec at the peak fault current of 76 A/peak/ and corresponding quench propagation speed was 43 m/sec (film cross section: 4 x 10$^{-6}$ $\textrm{cm}^2$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.598-601
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• 1999

There is currently considerable interest in the applications of conjugated polymers, oligomers and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field effect transistor and light emitting didoes. In this study, Pentacene thin film transistors(TFTs) were fabricated on glass substrate. Aluminum and Gold wei\ulcorner used fur the gate and source/drain electrodes. Silicon dioxde was deposited as a gate insulator by PECVD and patterned by R.I.E. The semiconductor layer of pentacene was thermally evaporated in vaccum at a pressure of about 10$^{-8}$ Torr and a deposition rate 0.3$\AA$/sec. The fabricated devices exhibited the field-effect mobility as large as 0.07cm$^2$/Vs and on/off current ratio larger than 10$^{7}$

• Bulletin of the Korean Chemical Society
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• 제22권5호
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• pp.481-487
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• 2001

Surface films formed prior to bulk reduction of lithium have been studied at gold, platinum, and copper electrodes in rigorously dried propylene carbonate solutions using electrochemical quartz crystal microbalance (EQCM) and secondary ion mass spectrometry experiments. The results indicate that the passive film formation takes place at a potential as positive as about 2.0 V vs. Li/Li+ , and the passive film thus formed in this potential region is thicker than a monolayer. Quantitative analysis of the EQCM results indicates that electrogenerated lithium reacts with solvent molecules to produce a passive film consisting of lithium carbonate and other compounds of larger molecular weights. The presence of lithium carbonate is verified by SIMS, whereas the lithium compounds of low molecular weights, including lithium hydroxide and oxide, are not detected. Further lithium reduction takes place underneath the passive film at potentials lower than 1.2 V with a voltammetric current peak at about 0.6 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.301-301
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• 2012

Amorphous In-Ga-Zn-O (a-IGZO)는 광학적으로 투명하고 높은 전자이동도를 가지고 있어서 차세대 thin-film-transistor의 channel layer 물질로 각광받고 있다. 이러한 a-IGZO를 TFT channel layer로 사용하기 위해서는 소스 드레인 전극물질과 IGZO박막의 계면에서 ohmic contact을 만드는 것도 중요하다. 하지만 산화물 반도체의 특성상 금속물질을 증착시킬 때 산화금속계면을 형성하기 때문에 ohmic contact이 형성되기 어려운 것으로 알려져 있다. Au는 보통 전극물질로 많이 사용되는데, 이는 전기전도도가 매우 높고, 독특한 산화환원반응 특성을 보이지만, 화학반응을 잘 일으키지 않는 안정성을 가지는 성질에 기인한다. 본 연구진은 Au가 a-IGZO에 증착 시에 일어나는 표면의 화학적 상태변화를 이해하기 위해 방사광을 이용한 고분해능 광전자 분광법을 이용하여 표면변화를 분석하였다. Au는 (Au 4f) 증착 초기엔 약간의 gold oxide가 함께 형성되지만, 주로 metal gold의 형태로 존재하였다. In 3d, Ga 3d, O 1s, Zn 3d 각각의 스펙트럼에서는 Au 증착으로 인해 낮은 결합에너지에 새로운 state가 나타났다. 한편, In은 상대적으로 다른 원소들에 비해 Au와 좀 더 결합을 잘 하는 것으로 나타났는데 이는, In 5s 전자궤도가 전도메커니즘에서 중요한 역할을 하기 때문에, In-Au의 상대적인 강한 결합은 a-IGZO의 전기적 특성 변화에 기여할 수 있음을 의미한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• KSBB Journal
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• 제13권6호
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• pp.724-729
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• 1998

To develop a large scale countercurrent single pass heat exchanger for continuous transportation and sterilization of soybean paste, microflora and color value of sterilized soybean paste were examined at various sterile condition. Aerobes, anaerobes, molds, yeasts and lactic acid bacteria were 5.1 x 107 CFU/g, 7.1 x 107 CFU/g, 2.6 x 105 CFU/g, 4.3 x 106 CFU/g, 1.3 x 107 CFU/g, respectively in raw soybean paste. In gold band ampoule test, aerobes and anaerobes of soybean paste were viable up to 90$^{\circ}C$, but become unviable at 100$^{\circ}C$. Molds decreased rapidly and yeasts decreased slowly from 70$^{\circ}C$. Lactic acid bacteria were unviable at 60$^{\circ}C$ within 10 min. In color test, Hunter L, a, and b values of soybean paste were 50.2, +5.6, and +17.8, respectively. After heating in polyethylene film bag at 80$^{\circ}C$, Hunter values were not so much changed and become 50.2, +4.7, and +19.7, respectively. The micorflora and color of soybean paste sterilized in a large scale heat exchanger system resulted in very similar to those of gold band ampoule and polyethylene film bag by effective heat transfer.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2000년도 추계학술발표대회 및 bio-venture fair
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• pp.52-55
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• 2000

Structually organized mono- and multilayers were developed on gold for the catalytic and affinity biosensing using hyper-branched dendrimers. For the catalytic biosensing interface, a new approach to construct a multilayered enzyme film on the electrode surface was developed. The film was prepared by layer-by-layer depositions of dendrimers and periodate-oxidized glucose oxidase. The voltammograms obtained from the GOx/dendrimer multilayered electrodes revealed that bioelectrocatalytic response is directly correlated to the number of deposited bilayers. From the analysis of voltammetric and ellipsometric signals, the coverage of active enzyme per layer during the layering steps was estimated, demonstrating the spatially-ordered multilayer formation. As an extension of the study, dendrimers having various degrees of ferrocenyl modification were prepared and used. The resulting electrodes were electrochemically characterized, and the density of ferrocenyl groups, active enzyme coverage, and sensitivity were estimated. For the affinity-sensing surrface, a biosensor system based on avidin-biotin interaction was developed. As the building block of affinity monolayer, G4 dendrimer having partial ferrocenyl-tethered surface groups was prepared and used. And the biotinylated and electroactive dendritic monolayer was used for the affinity-sensing surface interacting with avidin. Electrochemical characterization of the resulting biosensor was conducted using free enzyme in electrolyte in terms of degree of surface coverage with avidin and subsequent surface shielding.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권1호
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• pp.30-37
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• 2005

We present an air bridge type electrode system with tunable electrode distance for detecting electroactive biomolecules. It is known that the narrower gap between electrode fingers, the higher sensitivity in IDA (interdigitated array) electrode. In previous researches on IDA electrode, narrower patterning required much precise and expensive equipment as the gap goes down to nanometer scale. In this paper, an improved method is suggested to replace nano gap pattering with downsizing electrode distance and showed that the patterning can be replaced by thickness control using metal deposition methods, such as electroplating or metal sputtering. The air bridge type electrode was completed by the following procedures: gold patterning for lower electrode, copper electroplating, gold deposition for upper electrode, photoresist patterning for gold film support, and copper etching for space formation. The thickness of copper electroplating is the distance between upper and lower electrodes. Because the growth rate of electroplating is $0.5{\mu}m\;min^{-1}$, the distance is tunable up to hundreds of nanometers. Completed electrodes on the same wafer had $5{\mu}m$ electrode distance. The gaps between fingers are 10, 20, 30, and $40{\mu}m$ and the widths of fingers are 10, 20, 30, 40, and $50{\mu}m$. The air bridge type electrode system showed better sensitivity than planar electrode.

• Bulletin of the Korean Chemical Society
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• 제33권4호
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• pp.1128-1134
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• 2012

We investigated a new method for patterning organic field-effect transistors (OFETs) using a photopatternable conducting polymer nanocomposite, consisting of poly(3-hexylthiophene) (P3HT)-coated gold nanoparticles (AuNPs) that had been modified with a photoreactive cinnamate group, to form P3HT-AuNP-CI. We found that the addition of the cinnamate group to the nanoparticle surface assisted the preparation of a solvent-resistive semiconducting film and preserved the P3HT ordering, which was interrupted by Au-P3HT interactions, as well as provided UV-controllable electrical properties. The P3HT-AuNPs-CI films could be microscale-patterned via a UV crosslinking photoreaction, represented as a promising photopatternable semiconductor material for use in advanced applications, with tunable electrical properties for fabrication of sub-micron and microscale electronic devices.

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.