• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.168-170
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• 2001

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on corning glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then 10 ppm/$^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.30-34
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• 2002

In this Paper, Insulation of current lead in the conduction-cooled DC reactor for the 1.2kV class 3 high-Tc superconducting fault current limiter(SFCL) is studied. Thermal link which conducts heat energy but insulates electrical energy is selected as a insulating device for the current lead in the conduction-cooled Superconducting DC reactor. It consists of oxide free copper(OFC) sheets, Polyimide films, glass fiberglass reinforced Plastics (GFRP) plates and interfacing material such an indium or thermal compound. Through the test of dielectric strength in L$N_2$, polyimide film thickness of 125 ${\mu}{\textrm}{m}$ is selected as a insulating material. Electrical insulation and heat conduction are contrary to each other. Because of low heat conductivity of insulator and contact area between electrical insulator and heat conductor, thermal resistance of conduction-cooled system is increased. For the reducing of thermal resistance and the reliable contact between Polyimide and OFC, thermal compound or indium can be used As thermal compound layer is weak layer in electrical field, indium is finally selected for the reducing of thermal resistance. Thermal link is successfully passed the test. The testing voltage was AC 2.5kVrms and the testing time was 1 hour.

• 한국재료학회지
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• 제9권5호
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• pp.441-445
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• 1999

Alkaline earth metal oxides were added to the conventional MgO films as a protective layer for dielectric materials to have lower firing voltage(Vf) of the plasma display panel(PDP). Panels with various protective layers of MgO-alkaline earth metal oxides were prepared on glass by using e-beam evaporation and its effect on firing voltage characteristics were investigated. (Ba-Mg)O films had poor voltage characteristics because of higher activation energy of BaO. But, (Sr-Mg)O, (Ca-Mg)O and (Ca-Sr-Mg) O had better voltage characteristics than the conventional MgO. A mixture film of (Mg-Ca-Sr)O show the lowest firing voltage which is less than that of MgO by 20V. The chemical composition to have lowest firing voltage is MgO:SrO:CaO ratio of 6:2:2. The mixture of MgO-Alkaline earth metal oxides films showed good transmittance properties within the visual range.

• 한국진공학회지
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• 제20권5호
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• pp.327-332
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• 2011

ITO가 코팅된 유리 기판 위에 플라즈마 중합법으로 styrene 고분자 박막을 제작하고 상부 전극을 진공 열증착법으로 제작된 Au 박막으로 한 MIM (metal-insulator-metal) 소자를 제작하였다. 또한, 플라즈마 중합된 styrene 고분자 박막을 유기 절연박막으로 하고 진공열증착법으로 pentacene 유기반도체 박막을 제작하여 유기 MIS (metal-insulator-semiconductor) 소자를 제작하였다. 플라즈마 중합법으로 제작된 styrene (ppS; plasma polymerized styrene) 고분자 박막은 styrene 단량체(모노머) 고유의 특성을 유지하면서 고분자 박막을 형성함을 확인하였으며, 통상적인 중합법으로 제작된 고분자 박막 대비 k=3.7의 높은 유전상수 값을 보였다. MIM 및 MIS 소자의 I-V 및 C-V 측정을 통하여 ppS 고분자 박막은 전계강도 $1MVcm^{-1}$에서 전류밀도 $1{\times}10^{-8}Acm^{-2}$ 수준의 낮은 누설전류를 보이고 히스테리시스가 거의 없는 우수한 절연체 박막임이 판명되었다. 결과적으로 유기박막 트랜지스터 및 유기 메모리 등 플렉서블 유기전자소자용 절연체 박막으로의 응용이 기대된다.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.567-567
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• 2013

Surface plasmon resonance is the enhancement of electromagnetic wave caused by oscillation on the metal and dielectric interfaces. Surface plasmons with nanohole arrays provides an enhancedresonance for the specific wavelengths of interests. Asymmetric array of nanoscale structures can enable orientation dependent shift of resonance wavelengths when combined with the control of polarization for incident visible light, thus providing color tunability. Appropriate lattice constants along the direction of polarization in rectangular nanohole arrays can determine the resonance condition generating red (R), green (G), and blue (B) colors and potentially be applied to display applications. In ourprevious report, we have optimized the ion beam nanomachining conditions to fabricate the nanostructures on the metal film. We apply the fabrication conditions to make nanoscale hole arrays using 100 nm thick gold layer on the glass substrate with the optimal design of periodicities along x, y, and diagonal directions of a=440 nm, b=520 nm, c=682 nm, and the hole diameter of d=200 nm. Using the reflective light in dark field mode of optical microscope, we can observe different colors. When the polarizer is paralleled along a, b, or c direction, the represented color is changed to R, G, and B, respectively. We further map the color using i1 to correlate the conditions of the nanohole arrays with their characteristic color.

• 한국정밀공학회지
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• 제19권1호
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• pp.196-203
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• 2002

Generally, non-uniformity and removal rate are important factors on measurements of both wafer and die scale. In this study, we verify the effects of the pressure and relative velocity on the results of the chemical mechanical polishing and the effect of pattern density on inter layer dielectric chemical mechanical polishing of patterned wafer. We suggest an appropriate modeling equation, transformed from Preston\`s equations which was used in glass polishing, and simulate the removal rate of patterned wafer in chemical mechanical polishing. Results indicate that the pressure and relative velocity are dominant factors for the chemical mechanical polishing and pattern density effects on removal rate of pattern wafers in die scale. The modeling is well agreed to middle and low density structures of the die. Actually, the die used in Fab. was designed to have an appropriate density, therefore the modeling will be suitable for estimating the results of ILD CMP.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.110-118
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• 2002

Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.407-407
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• 2008

무기EL 디스플레이는 고체재료에 전계를 가했을 때 발광하는 현상을 이용한소자로서, 급속도로 발전을 거듭하고 있으나, 유전체층에 강한전계를 가하여 발광하여야 하므로 낮은 Breakdown voltage와 효율의 한계로 인하여 휘도가 낮고 풀 컬러화 디스플레이 등 의 응용에는 적용되고 있지 못하는 실정이다. 본 연구에서는 강유전체 Perovskite 구조를 가지는 ABO3 물질 중 PMN(Lead Magnesium niobate) 과 PZT (Lead Zirconate titanate) 후막을 제조하여 Inorganic EL(Electro Luminance)에 적용하고 소자의 광전특성을 평가하였다. 소자에 사용된 기판은 고온소성에 알맞은 알루미나(Al2O3)기판을 채택 하였으며, 그 위 하부전극으로는 고온소성에 따른 화학적 안정성이 우수한 Au전극을 Screen Printing 하였다. 제조 되어진 PMN후막 페이스트는 PMN(Pb(Mg1/2 Nb2/3)O3) + Glass Frit(Pb-Zn-B) + BaTiO3(99.99%) 로 합성되었으며 하부전극위에 인쇄하였다. 그 다음 PZT sol-gel을 Spin coating으로 도포 하였다. 형광체로 ZnS:Cu.Cl 을 Screen Printing을로 형성하였으며, 평탄화를 위하여 유기물 충을 Screen Printing 공정으로 성막 하였다. 상부전극으로는 DC sputter로 ITO를 증착하여 EL소자 완성 후 Spectro - Chroma meter로 소자특성을 측정하였다. 평탄화를 통한 유기물층에 변화되는 Capacitance를 Oscilloscope로 전압 전류 pulse의 변화에 따른 opto-electronic 특성을 평가하였다.