• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.149-155
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• 2015

The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.154-155
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• 2002

스핀밸브형 GMR(Giant magnetoresistance) 소자는 낮은 자장범위에서 큰 자기저항변화가 생기는 높은 민감도의 소자로서, 고밀도 자기기록매체의 재생헤드 및 MRAM(Magnetoresistance Random Access Memory) 등의 실제 응용에 있어 큰 자기저항비와 열적 안정성을 가지는 재료들을 필요로 한다. NiO, a-$Fe_2O_3$, NiO/a-$Fe_2O_3$ 등과 같은 산화물의 경우, 높은 Tn(Neel temperature)을 가지므로 이를 이용한 Bottom형 스핀밸브에 대한 연구가 활발히 진행되어 왔다. (중략)

• Journal of the Korean Magnetics Society
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• v.21 no.1
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• pp.32-36
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• 2011

We fabricated a sensor for measuring the water level and water temperature using GMR-SV (giant magnetoresistance-spin valve) device, simultaneously. It could be applied to the medical cooling system of the potassium titanylphosphate KTP) laser system for the therapy of a benign prostatic hyperplasia. The middle point of GMR-SV device was set to the near position of a high magnetic sensitivity with 2.8%/Oe. The sensitivity for the water level and water temperature of the fabricated sensor were $400\;m{\Omega}/mm$ and $100\;m{\Omega}/^{\circ}C$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.60-60
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• 2011

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active research areas in spintronics. The high magnetoresistance and the high spin polarization (P) of electrons in the ferromagnetic electrodes of tunnel junction or intermediate layers are required. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, P ~ 100% spin polarization, and has a high Curie temperature (TC~850 K). Experiments demonstrated that the P~($80{\pm}5$)%, ~($60{\pm}5$)%, and ~40-55% for epitaxial (111), (110) and (001)-oriented Fe3O4 thin films, respectively. Epitaxial Fe3O4 films may enable us to investigate the effects of half metals on the spin transport without grain-boundary scattering.In addition, it has been reported that the Verwey transition (TV, a first order metal-insulator transition) of 120 K in bulk Fe3O4 is strongly affected by many parameters such as stoichiometry and stress, etc. Here we report that the growth modes, magnetism and transport properties of Fe3O4 thin films were strongly dependent on the oxygen pressure during film growth. The average roughness decreases from 1.021 to 0.263 nm for the oxygen pressure increase from $2.3{\times}10-7$ to $8.2{\times}10^{-6}$ Torr, respectively. The 120 K Verwey transition in Fe3O4 was disappeared for the sample grown under high oxygen pressure.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.94-100
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• 2004

We have investigated the magnetic domain structure and the thermal stability of magnetotransport properties of IrMn biased spin-valves containing Co, CoFe and NiFe. The magnetic domain structures were imaged using a magneto-optical indicator film(MOIF) technique. To investigate the thermal stability, magnetoresistance(MR) was measured at annealing temperature(TANN) and room temperature($T_{RT}$) followed by the annealing. Domain imaging reveal that the increase of annealing temperature led to changes in the exchange coupling between the two ferromagnet(FM) layers through nonmagnetic layer rather than between FM and antiferromagnet. unlike the NiFe biased IrMn spin valve with large domains, MOIF pictures of Co and CoFe biased IrMn spin valve structures show the formation of many small microdomains. The magnetic structure, as revealed by the domain images, appeared unchanged while the MR dropped dramatically. From the combined giant magnetoresistance(GMR) and MOIF results, it was apparent that the decrease of MR ratio was not related to the spin valve magnetic structure up to about $350^{\circ}C$($T_{RT}$ ).

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.35-40
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• 2010

The GMR-SV (giant magnetoresistance-spin valve) device depending on the micro patterned features according to two easy directions of longitudinal and transversal axes has been studied. The GMR-SV multilayer structure was Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm). The applied anisotropy direction of the GMR-SV thin film was performed under the magnitude of 300 Oe using by permanent magnet during the deposition. The size of micro patterned device was a $1\;{\times}\;18\;{\mu}m^2$ after the photo lithography process. In the aspects of the shape magnetic anisotropy effect, there are two conditions of fabrication for GMR-SV device. Firstly, the direction of sensing current was perpendicular to the magnetic easy axis of the pinned NiFe/IrMn bilayer with the transversal direction of device. Secondly, the direction of shape magnetic anisotropy was same to the magnetic easy axis of the free NiFe layer with the longitudinal direction of device.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.150-151
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• 2003

In the past years, a giant magnetoresistance (GMR) effect found in perovskite-like structured materials has attracted considerable attention among scientists and manufacturers, since, a practical point of view, the capacity of producing magnetic and sensing sensors. In a stream of this interest, further efforts to understand the underlying mechanism that leads to the GMR effect relative to the correlation between transport and magnetic properties, have been extensively devoted. In these cases, spin-glass-like behaviors are ascribed to the frustration of random competing exchange interactions, namely the ferromagnetic double-exchange interaction between Co$\^$3+/ (or Mn$\^$3+/) and Co$\^$4+/(or Mn$\^$4+/) and the antiferromagnetic one like spins. Noticeably, the distinction of spin-glass region from cluster-glass one, involved in the remarkable changes in transport and magnetic properties at a critical value of doping concentration, was observed. Magnetic anomalies in zero-field-cooled (ZFC) magnetization as well as ac magnetic susceptibility below Curie temperature T$\sub$c/ and the charge/orbital fluctuation were also realized. In this work, we present a study of magnetic properties of a deficient manganese perovskites system of La$\sub$0.6/Sr$\sub$x/MnTi$\sub$y/O$_3$, and particularly provide its new magnetic phase diagram.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.882-884
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• 1999

금속 다층박막과 미세입상 합금박막에서 발견된 Giant Magnetoresistance(GMR)현상에 고무되어 최근에는 50년대에 밝혀졌던 산화물 자기저항 재료에 관하여 새롭게 연구하고 있다. Perovskite 구조를 가지는 $La_{1-x}Ca_{x}MnO_{3}$ 박막에서 큰 자기저항을 얻었으며 이를 Colossal Magentoresistance (CMR)이라 한다. 본 연구에서는 $La_{1-x}Ca_{x}MnO_{3}$ 분말을 고상반응법과 자발착화연소 합성법(Glycine-Nitrate Process)으로 각각 제조하였으며 비교 분석하였다. TGA을 이용하여 불순물과 미반응 물질을 확인하여 적당한 하소온도를 결정하였고 XRD를 이용하여 결정상을 분석하였다. Dilatometer를 이용해 $1400^{\circ}C$까지의 열팽창율을 측정하였다. BET로 비 표면적을 비교하였으며, 주사전자현미경(SEM)으로 각각 제조된 분말의 입자상태와 입자성장을 확인하였다. GNP법으로 합성한 경우가 고상반응법을 이용한 경우보다 입자의 크기가 submicron 단위로 미세하고 비표면적도 수배 컸으며, 고순도의 perovskite 구조를 갖는 $La_{1-x}Ca_{x}MnO_{3}$ 분말을 얻을 수 있었다.

• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.224-230
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• 1998

The relationships between R-H curves of gaint magnetoresistance (GMR) spin valve trilayer films and M-H curves of each magnetic layer consisting of the trilayer films were analyzed and simple formula representing the relations between the curves were suggested for theoretical analysis and study of magnetoresistance (MR) in those films, especially where the MR is from the difference of coercivity. Using two kinds of NiFe/Cu/Co films, which had been deposited on Cu(50 $\AA$)/Si(111, 4$^{\circ}$ tilt-cut) and Cu(50 $\AA$)/glass, R-H and M-H curves were measured and compared with the calculated ones, which were obtained by appying the M-H curves of single NiFe and Co films, deposited on the same substrates, to the previously reported single-domain and multi-domain models. The calcuated ones were well consistent with the measured ones and the suggested simple relationships between R-H and M-H curves are thought to be very useful for the deep understanding of MR behavior and the reasonable approach to improve MR properties in GMR spin valve trilayer films.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.2
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• pp.120-125
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• 2006

By employing a rapid solidification method and atmospheric annealing at $450^{\circ}C-1hr$, we were able to manufacture inexpensively granular CuCo alloy ribbons with thickness of $20{\mu}m$ showing giant magnetoresistance (GMR) ratio of more than 5% at a high magnetic field of 0.5T. To verify maximum MR effect, the MR ratio, saturation magnetization, and microstructure change were investigated with Co contents between 5 and 30 at%. It was possible to obtain GMR ratios of 5.2% at 1.2T, and 3% at 0.5T, which implies an appropriate MR for industrial purpose at a Co content of $8{\sim}l4%$. MR ratio was reduced rapidly at a Co content below 5% due to superparamagnetic effect and at a Co content above 20% due to agglomeration of Co clusters. Surface oxidation during rapid solidification and atmospheric annealing did not have much affect on MR ratio. Our result implies that our economic CuCo granular alloy ribbons may be appropriate for high magnetic field sensor applications with wide content range of $8{\sim}14$ at%Co.