• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.595-603
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• 2016

Rare-earth zirconates, including lanthanum zirconate and gadolinium zirconate, have been investigated as ones of the most promising candidates for next-generation thermal barrier coating (TBC) materials due to their excellent properties such as low thermal conductivity, chemical stability at high temperature and so on. In this study, TBCs with three compositions, in the $La_2O_3-Gd_2O_3-ZrO_2$ system with reduced rare-earth contents from $RE_2Zr_2O_7$ compositions, were fabricated by using suspension plasma spray with different suspension preparation methods. The phase formation, microstructure, and thermal properties of TBCs were examined. In particular, each coating exhibited single fluorite phase and a dense, vertically-separated microstructure. The potential of coatings with rare-earth zirconates for TBC applications was also discussed.

• Journal of the Korea Organic Resources Recycling Association
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• v.14 no.3
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• pp.85-90
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• 2006

The purpose of this research is to design an imitation boiler similar to the waste heat boiler installed on a plasma melting furnace in order to acquire a capability of a thermal design as to the circulation of heat and the discharge of noxious gas inside a boiler and to improve the efficiency of a waste heat boiler using the CFD (Computation Fluid Dynamics) program. The position of corrosion and the generation of a clinker inside a boiler due to temperature changes, combustion gas flows, and corrosive gases inside a boiler are examined to design the structure of an efficient boiler and recycle energy. As a result of this research, the boiler installed on a plasma melting furnace met the conditions of design by cooling the combustion gases discharged after the second combustion from an exhaust port, originally at 1,200 degrees Celsius, down to around 450 degrees Celsius. On the other hand, the circulation of corrosive gases (SOx and HCL) may lead to the generation of corrosion or a clinker in the upper and lower parts of an exhaust port more easily than any other parts of a boiler. Accordingly, the corrosion on the inside and outside walls of a boiler may result in a shortened lifespan of a boiler and an inability to recycle waste heat in an efficient manner. A prevention against corrosion at high and low temperatures needs to be considered in detail.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.138-144
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• 2016

The discharge characteristics of pulse-driven coplanar micro barrier discharges for an ultraviolet (UV) light source using Ne-Xe mixture have been investigated using a two-dimensional fluid simulation at near-atmospheric pressure. The densities of electrons, the radiative excited states, the metastable excited states, and the power loss are investigated with the variations of gas pressure and the gap distance. With a fixed gap distance, the number of the radiative states $Xe^*(^3P_1)$ increases with the increasing driving voltage, but this number shows weak dependency on the gas when that pressure is over 400 Torr. However, the number of the radiative states increases with the increase of the gap distance at a fixed voltage, while the power loss decreases. Therefore, a long gap discharge has higher efficiency for UV generation than does a short gap discharge. A slight change in the electrode tilt angle enhances the number of radiative species 2 or 3 times with the same operation conditions. Therefore, the intensity and efficiency of the UV light source can be controlled independently by changing the gap distance and the electrode structure.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.167-169
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• 2009

We have carried out quantitative structure and property analysis of the nanoporous structures of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen as an oxidant gas. We found that the SiCOH film using VTMS only showed well defined spherical nanopores within the film after thermal annealing at $450^{\circ}C$ for 4 h. The average pore radius of the generated nanopores within VTMS SiCOH film was 1.21 nm with narrow size distribution of 0.2. It was noted that thermally labile $C_{x}H_{y}$ phase and Si-$CH_3$ was removed to make nanopore within the film by thermal annealing. Consequently, this induced that decrease of average electron density from 387 to $321\;nm^{-3}$ with increasing annealing temperature up to $450^{\circ}C$ and taking a longer annealing time up to 4 h. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS SiCOH film. Because, with more vinyl groups are introduced in original precursor molecule, films contain more organic phase with less volatile characteristic due to the crosslinking of vinyl groups. Collectively, the presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/$C_{x}H_{y}$ dual phase films, and post annealing has an important role on generation of pores with the SiCOH film.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.8-16
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• 2023

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO₂ structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO₂ structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO₂. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.