• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.160-160
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• 2011

In the present work, $TiO_2$ fiilms supported by porous silica gel with high surface area synthesized by atomic layer deposition(ALD). Porous structure of silica substrate could be maintained even after deposit large amount of $TiO_2$ (500 cycles of ALD process), suggesting the differential growth mode of $TiO_2$ on top surface and inside the pore. All the $TiO_2$-covered silica samples showed improved MB adsorption abilities, comparing to bare one. In addition, when silica surface was covered with $TiO_2$ films, MB adsorption capacity was almost fully recovered by re-annealing process (500$^{\circ}C$, for 1 hr, in ambient pressure), whereas MB adsorption capacity of bare silica was decreased after re-heaing process. FT-IR study demonstrated that $TiO_2$ film could prevent deposition of surface-bound intermediate species during thermal decomposition of adsorbed MB molecules. Photocatalytic activity of $TiO_2$/silica sample was also investigated.

• Journal of the Korean Electrochemical Society
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• v.10 no.4
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• pp.252-256
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• 2007

A series of spherical porous carbons were prepared via resorcinol-formaldehyde (RF) sol-gel polymerization in the presence of cationic surfactant (CTAB, cetyltrimethylammonium bromide), wherein the carbon sphere size was controlled by varying the CTAB introduction time after a pre-determined period of addition reaction (termed as "pre-curing"). The sphere size gradually decreases with an increase in the pre-curing time within the range of 30-150 nm. The carbons possess two types of pores; one inside carbon spheres (intra-particle pores) and the other at the interstitial sites made by carbon spheres (inter-particle pores). Of the two, the surface exposed on the former was dominant to determine the electric double-layer capacitor (EDLC) performance of porous carbons. As the intra-particle pores were generated inside RF gel spheres by gasification, the pore diameter was similar for all these carbons, thereby the pore length turned out to be a decisive factor controlling the EDLC performance. The charge-discharge voltage profiles and complex capacitance analysis consistently illustrate that the smaller-sized RF carbons deliver a better rate capability, which must be the direct result of facilitated ion penetration into shorter pores.

• Current Photovoltaic Research
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• v.11 no.4
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• pp.103-107
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• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.373-379
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• 2020

In this study, TiN-coated cBN (cubic-structure boron nitride) powders were successfully synthesized by a sol-gel method using titanium (IV) isopropoxide (TTIP) and by controlling the heat treatment conditions. After the sol-gel process, amorphous nano-sized TiO_x was uniformly coated on the surface of cBN powder particles. The obtained TiO_x-coated cBN powders were heated at 1,000~1,300℃ for 1 or 6 h in a flow of 95%N₂-5%H₂ mixed gas. With increasing temperature, the chemical composition of the TiO_x coating layer changed in the order of TiO₂→Ti₆O₁₁→Ti₄O₇→TiN due to reduction of the Ti ions. The TiN coating layer was observable in the samples heated at 1,200℃ and appeared as the main phase in the sample heated at 1,300℃. The resulting thickness of the TiN coating layer of the sample heated at 1,300℃ was approximately 45~50 nm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.16.1-16.1
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• 2009

We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.617-625
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• 1995

In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.390-390
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• 2010

We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects. which can provide deleterious current paths. are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and $1{\times}10^{-12}A$. respectively.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.427-435
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• 1994

Cu-metallized low firing temperature substrates were synthesized by cofiring green sheet of cordierite-based glass with Cu. By Sol-Gel method, Cu powder was coated with borosilicate gel which should act as a glass frit in Cu paste during cofiring. Theoretical weight ratios of Glass/Cu were controlled to be 2.5, 5, 10 and 15% by varying alkoxide concentrations. Average particle size of coated Cu was 0.629~0.674 ${\mu}{\textrm}{m}$ in comparison to that of as-received Cu(0.596 ${\mu}{\textrm}{m}$), which increased with alkoxide concentration but did not increase above certain concentration. The weight ratios of coated layer were 2.11~5.37%. The properties of Cu-metallized low firing temperature substrate, cofired at 90$0^{\circ}C$ for 1h under H2/N2 atmosphere, were as follows; sheet resistance was 13~43 m{{{{ OMEGA }}/$\square$, adhesion strength was 1.0~2.1 kgf/$\textrm{mm}^2$. From the observations of SEM photographs, the gel coated on Cu performed excellently as a glass frit.

• Tribology and Lubricants
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• v.13 no.3
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• pp.115-123
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• 1997

The electrorheological (ER) behavior of suspensions in silicone oil of silica gel powder (average particle size 49 $\mu$m) absorbed water was investigated at room temperature with electric fields up to 2.4 KV/mm. In this paper, for development of succcessful ER fluids used for wide temperature range later, we would like to know a fundamental understanding of water on ER effect. As a first step, the ER fluids involving water activated silica gel were measured not only the electrical characteristics such as dielectric constant, current density and electrical conductivity but also the rheological properties on the strength of electric field, the quantity of dispersed phase and absorbed water. From the experimental results that water absorbed to the particles directly affects to the surface charge density of electric double layer model proposed by Schwarz and makes dielectric constant and current density of ER fluids increase. The current density and dynamic yield stress $($\tau$_y)$ of water activated silica gel suspensions was in exponential proportion to the strength of electric field, the quantity of dispersed phase and absorbed water. And the optimum water quantity and weight concentration of silica gel for electrorheological effect were 4-5 wt% and 15 wt%, respectively.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.33 no.1 s.60
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• pp.23-28
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• 2007

Ascorbic acid (vitamin C, AsA) has been known as a strong reducing agent and is supposed to retard the synthesis of melanin pigment. A main problem that arose in using vitamin C in cosmetic formulation was its poor stability and low skin permeability, which result in low lightening efficacy in clinical trials. In this study, iontophoretic gel patch with flexible thin layer battery was employed in order to enhance skin permeation of vitamin c derivative (ascorbyl glucoside, AsAG) and to increase its lightening efficacy. in vitro iontophoretic skin permeation and stability of AsAG, safety and clinical lightening efficacy of iontophoretic patch containing 2% AsAG solution were examined. A optimun current of ionthophoretic patch for korean women was 0.1 mA, considering the skin permeability and skin irritation of consumers. We suggest that iontophoretic gel patch could be a safe system for enhancing the skin permeation of AsAG and lightning efficacy.