• 제목/요약/키워드: GeSn.

검색결과 46건 처리시간 0.025초

직접천이 띠간격을 갖는 $Ge_{1-x}$$Sn_x$/$Ge_{1-y}$$Sn_y$(001)의 전기적 특성 연구 (Study of the electrical propety for $Ge_{1-x}$$Sn_x$/$Ge_{1-y}$$Sn_y$((001) with a direct gap)

  • 박일수;전상국
    • 한국전기전자재료학회논문지
    • /
    • 제13권12호
    • /
    • pp.989-995
    • /
    • 2000
  • G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ is a very promising material for the high-speed device due to the fact that electron and hole mobilities for the strained G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ are greatly enhanced. Because G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ has a direct band gap for the proper combination of x and y, it can be applied to the optoelectronic device. Therefore, the study of the electrical property for G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$(001) with a direct energy gap is needed. G $e_{1-x}$ S $n_{x}$ layer can not be grown thickly due to the large difference of lattice constants. This fact prefers the structure of the device where electrons and holes move in the plane direction. The transverse mobilities of electron and hole for G $e_{0.8}$S $n_{0.2}$Ge(001) are 2~3 times larger than those for Ge/Ge/ sub0.8/S $n_{0.2}$(001). Therefore, G $e_{0.8}$S $n_{0.2}$Ge(001) is expected to be better than Ge/G $e_{0.8}$S $n_{0.2}$(001) for the development of the high-speed device.h-speed device.device.h-speed device. device.

  • PDF

Influence of Sn/Bi doping on the phase change characteristics of $Ge_2Sb_2Te_5$

  • Park T.J.;Kang M.J.;Choi S.Y.
    • 정보저장시스템학회논문집
    • /
    • 제1권1호
    • /
    • pp.93-98
    • /
    • 2005
  • Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

  • PDF

Zn2GeO4와 Zn2SnO4 나노선의 리튬 및 소듐 이온전지 성능 비교 연구 (Comparative Cycling Performance of Zn2GeO4 and Zn2SnO4 Nanowires as Anodes of Lithium- and Sodium Ion Batteries)

  • 임영록;임수아;박정희;조원일;임상후;차은희
    • 전기화학회지
    • /
    • 제18권4호
    • /
    • pp.161-171
    • /
    • 2015
  • 수열합성법을 이용하여 $Zn_2GeO_4$$Zn_2SnO_4$ 나노선을 대량 합성하였고 리튬이온 전지와 소듐이온전지의 전기화학적 특성을 조사하였다. 리튬이온전지에서 $Zn_2GeO_4$ 나노선은 50 사이클 이후에 1021 mAh/g, $Zn_2SnO_4$ 나노선은 692 mAh/g의 높은 방전용량을 갖는 것을 확인하였고 두 나노선 모두 98%가 넘는 쿨롱 효율을 보였다. 따라서 이들 나노선은 고성능 리튬이온전지의 개발을 위한 음극소재로 기대된다. 또한 소듐이온전지에 대한 관심이 국내는 물론 전 세계적으로 집중이 되고 있어 처음으로 $Zn_2GeO_4$$Zn_2SnO_4$ 나노선에 대한 소듐이온전지를 제작하여 용량을 측정하였다. 측정한 결과 이들 나노선은 50 사이클 이후에 각각 168 mAh/g 과 200 mAh/g의 방전용량을 갖는 것을 확인하였고 두 나노선 모두 97%가 넘는 높은 쿨롱 효율을 보였으며 이에 우리의 첫 시도가 앞으로 많은 연구에 기여할 것으로 예상한다.

Thermoelectric Material Design in Pseudo Binary Systems of $Mg_2Si-Mg_2Ge-Mg_2Sn$ on the Powder Metallurgy Route

  • Aizawa, Tatsuhiko;Song, Renbo;Yamamoto, Atsushi
    • 한국분말야금학회:학술대회논문집
    • /
    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
    • /
    • pp.75-76
    • /
    • 2006
  • New PM route via bulk mechanical alloying is developed to fabricate the solid solution semi-conductive materials with $Mg_2Si_{1-x}Ge_x$ and $Mg_2Si_{1-y}Sn_y$ for 0 < x, y < 1 and to investigate their thermoelectric materials. Since $Mg_2Si$ is n-type and both $Mg_2Ge$ and $Mg_2Sn$ are p-type, pn-transition takes place at the specified range of germanium content, x, and tin content, y. Through optimization of chemical composition, solid-solution type thermoelectric semi-conductive materials are designed both for n-and p-type materials.

  • PDF

Ge1-xSnx/Ge1-ySny(001)의 band lineup 유형 (Band Lineup Types Based on Ge1-xSnx/Ge1-ySny(001))

  • 박일수;전상국
    • 한국전기전자재료학회논문지
    • /
    • 제15권9호
    • /
    • pp.770-775
    • /
    • 2002
  • We present the band lineups of G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructures for the new devices. The energy gap of the bulk G $e_{1-}$x S $n_{x}$ alloy is calculated by taking into account the Vegard's law. The change of the energy gap due to the strain is understood in terms of the deformation Potential theory The valence band offset is obtained from the average bond energy model, where the changes of the band offset due to alloy compositions and strain are included. It is found that Ge/G $e_{1-}$y S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.06 and a straddling one for 0.06$\leq$0.26. Meanwhile, Ge/G $e_{l-y}$ S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.19 and a broken-gap one for 0.19$\leq$0.26. As a result, the various type of the G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructure can be applied for the useful device.evice.

실리콘, 게르마늄, 주석이 결합된 고굴절률 아크릴 고분자의 합성 (Synthesis of Polyacrylates Containing Si, Ge and Sn for High Refractive Index)

  • 마해스와라;도정윤
    • 폴리머
    • /
    • 제34권6호
    • /
    • pp.588-593
    • /
    • 2010
  • 실리콘, 게르마늄, 주석이 결합된 7개의 아크릴 단량체가 개발되었고 이를 광경화시킨 필름의 굴절률을 측정하였다. 공단량체로 가교도가 높은 triacrylate(Trimer)를 사용하여 형성된 공중합체의 굴절률로부터 단일중합체의 굴절률을 계산하였다. 공유 결합된 $Ph_3Si$, $Ph_3Ge$, $Ph_3Sn$은 각각 아크릴 고분자 필름의 굴절률을 향상시키는데 기여하였고 주석이 게르마늄에 비해 약간 높은 기여도로 나타났다. 주석에 의한 굴절률 향상 효과는 $Bu_3Sn$을 도입한 결과와 aliphatic acrylate의 비교로 보다 명확하게 입증되었다. 주석과 황의 안정된 결합을 이용하여 $Ph_3SnS$가 도입된 아크릴 고분자의 굴절률은 589 nm에서 1.671로 높게 측정되었다. 측정 파장으로 656, 830, 1310, 1550 nm에서도 비슷한 굴절률이 관찰되었다.

월류(月留) 은(銀)-금(金) 열수광상(熱水鑛床)에서 산출된 함(含) Ge 광물(鑛物)인 Argyrodite의 산상(産狀)과 지구화학(地球化學) (Occurrence and Geochemistry of Argyrodite, a Germanium-Bearing Mineral(Ag8GeS6), from the Weolyu Ag-Au Hydrothermal Vein Deposits)

  • 소칠섭;윤성택;최선규
    • 자원환경지질
    • /
    • 제26권2호
    • /
    • pp.117-127
    • /
    • 1993
  • 월류(月留) 은(銀)-금(金) 열수광상(熱水鑛床)의 맥상광석(脈狀鑛石)내에는 평균 34.9g/ton, 최대 145g/ton에 이르는 상당량의 게르마늄 (Ge)이 아지로다이트 (argyrodite)의 형태로 산출된다. 본 연구에서는, 전자현미분석법(電子顯微分析法)에 의하여 아지로다이트와 수반 광물의 광물화학(鑛物化學)을 검토하였고, ICP 질량(質量) 분광분석법(分光分析法)에 의하여 13개 광석시료내에 함유된 28개 원소(元素)의 정량분석(定量分析)을 수행하였다. 아지로다이트는 탄산염(炭酸鹽) 광물(鑛物)+석영(石英)+자연은(自然銀)+휘은석(煇銀石)+함은(含銀) 유염(硫鹽) 광물의조합으로 구성되는 후기 광물군(鑛物群)내에 산출되며, 이는 게르마늄의 침전(沈澱)작용이 초기 금(金) 및 후기의 은(銀) 침전(沈澱)으로 구성된 복잡한 광화작용(鑛化作用)중 후반부에서 진행되었음을 지시한다. 아지로다이트의 평균(平均) 화학조성(化學造成)은 $Ag_{7.90}(Ge_{0.76}Sn_{0.04})S_6$이며, 미량의 Cu, Fe, Sb, As, Sn 및 Zn이 함유되고, 특히 Cu에 의한 Ag, Sb에 의한 Ge의 체계적인 치환(置換)현상이 인지된다. 광석(鑛石)시료에 대한 정량분석결과, 금속원소의 침전작용(沈澱作用)은 $Fe{\rightarrow}Pb$, $Zn{\rightarrow}Cu{\rightarrow}Ag$, Sb, As, Ge의 순서로 진행되었고, 특히 Ge은 As 및 Sb와 강한 지화학적(地化學的) 친화도(親和度)를 가졌음을 규명하였다. Ge은 Cu, Pb, Zn, Mo 및 Sr과도 미약한 정(正)의 수반관계를 나타낸다. 월류(月留) 천열수계(淺熱水系)내 순환천수(循環天水)의 유입량(流入量) 증가에 기인한 냉각작용(冷却作用)에 수반하여, Ge은 주로 $175^{\circ}{\sim}210^{\circ}C$의 온도 범위에서 침전(沈澱)하였다.

  • PDF

기계화학적 방법으로 합성한 Cu2Zn(Sn,Ge)S4 나노결정과 이를 이용하여 제조한 태양전지 (Mechanochemically Synthesized Cu2Zn(Sn,Ge)S4 Nanocrystals and Their Application to Solar Cells)

  • 박보인;이승용;이도권
    • Current Photovoltaic Research
    • /
    • 제4권3호
    • /
    • pp.114-118
    • /
    • 2016
  • $Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.

고성능 리튬 이차 전지를 위한 황화 주석 저마늄 (SnxGe1-xS) 나노입자 연구 (Tin Germanium Sulfide Nanoparticles for Enhanced Performance Lithium Secondary Batteries)

  • 차은희;김영운;임수아;임재욱
    • 전기화학회지
    • /
    • 제18권1호
    • /
    • pp.31-37
    • /
    • 2015
  • 삼성분 칼코게나이드 화합물인 황화 주석 저마늄 ($Sn_xGe_{1-x}S$) 합금 나노입자를 메틸 주석 $(Sn(CH_3)_4$, tetramethyl tin, TMT) 메틸 저마늄 $(Ge(CH_3)_4$, tetramethyl germanium, TMG), 황화수소 ($H_2S$, hydrogen sulfide) 혼합 가스의 레이저 광분해 반응법으로 합성할 수 있으며, 이때 반응기 안의 가스 혼합비율에 따라 나노입자의 주석과 저마늄의 조성비를 조절할 수 있었다. 조성비를 가변시킨 나노입자는 모두 결정성을 갖게 만들 수 있었으며, 리튬 이온 전지의 음극소재로서 우수한 특성을 보여주었다. 조성비에 따라 특성을 조사결과, 황화저마늄은 70 사이클 후 최대 1200 mAh/g의 가장 높은 방전용량을 갖는 것과, 주석 성분 함량이 클수록 높은 충방전률에서 용량 유지가 더 잘 됨을 확인하였다. 이와 같은 우수한 효율의 황화물 합금 나노입자의 새로운 대량 합성법은 고성능 에너지 변환 소재 실용화에 기여할 것으로 예상된다.

Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • 황창묵;박종완
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
    • /
    • pp.302-303
    • /
    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

  • PDF