• Publications of The Korean Astronomical Society
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• v.26 no.4
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• pp.147-157
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• 2011

I found evidence that Kim Y$\breve{o}$ng (金泳, 1749-1817) is the author of the Korean Poch'$\breve{o}$n'ga with New Charts published in 1792 by the Astronomical Bureau of the Chos$\breve{o}$n dynasty. I reconstructed a history of Kim Y$\breve{o}$ng from various literature remained in other persons' anthologies and governmental records. My findings on the author and publication year can help to solve the problem on the origin of star charts in the Poch'$\breve{o}$n'ga with New Charts. I also considered the changes of Chinese Bu-Tian-Ge and their star charts after Chongzhenglishu (崇禎曆書). I found that the new charts in the book of Huantiantushuo published by Li Mingche (李明徹, 1751-1832) in 1819 are approximately the same to those in the Poch'$\breve{o}$n'ga with New Charts by Kim Y$\breve{o}$ng in 1792.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.1-6
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• 2004

In this paper author describe the undoped and $Co^{2+}$ (0.5mole%)doped $Cd_4GeS_6$ single crystals were grown by the chemical transporting reaction(CTR) method using high purity(6N) Cd, $GeS_2$, S elements. It was found from the analysis of X-ray diffraction that the undoped and $Co^{2+}$(0.5mole%) doped $Cd_{4}GeS_{6}$ compounds have a monoclinic structure in space grop Cc. The optical energy band gap was direct band gap and temperature dependence of optical energy gap was fitted well to Varshni equation. Impurity optical absorption peaks due to the doped cobalt in the $Cd_4GeS_6:Co^{2+}$ single crystal were observed at 3593cm-1, 5048cm-1, 5901cm-1, 7322cm-1, 12834cm-1, 13250cm-1, 14250cm-1，and 14975cm-1 at 11.3K.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3217-3220
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• 2010

The electronic structures and bonding configuration of histidine on Ge(100) have been investigated with various sample treatments using core-level photoemission spectroscopy (CLPES). Interpretation of the Ge 3d, C 1s, N 1s, and O 1s core level spectra being included in these systems revealed that both the imino nitrogen in the imidazole ring and the carboxyl group in the glycine moiety concurrently participate in the adsorption of histidine on a Ge(100) surface at 380 K. Moreover, we could clearly confirm that the imino nitrogen with a free lone pair in the imidazole group adsorbs on Ge(100) more strongly than the carboxyl group in the glycine moiety by examining systems annealed at various temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.136-136
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• 2013

High-resolution photoemission spectroscopy (HRPES) measurements were collected and density functional theory (DFT) calculations were conducted to track the coverage dependent variation of the absorption structure of 2-thiophenecarboxaldehyde (C4H3SCHO: TPCA) on the Ge(100) surface at room temperature. In an effort to identify the most probably adsorption structures on the Ge(100) surface, we deposited TPCA molecules at a low coverage and at a high coverage and compared the differences between the electronic features measured using HRPES. The HRPES data provided three possible adsorption structures of TPCA on the Ge(100) surfaces, and DFT calculations were used to determine the plausibility of the structures. HRPES analysis, corroborated by DFT calculations, indicated that an S-dative bonded structure was the most probable adsorption structure at relatively lower coverage levels, the [4+2] cycloaddition structure was the second most probable structure, and the [2+2]-C=O cycloaddition structure was the last probable structure on the Ge(100) surfaces at relatively higher coverage levels.

• The Korean Journal of Food And Nutrition
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• v.22 no.4
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• pp.701-707
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• 2009

This study was conducted to investigate the effects of Ge(germanium) treatment on rice quality. Rice samples were divided into the following treatment groups: control(CON: cultivated without Ge), Ge-1(cultivated with 200 kg of rough stone powder containing 1.6 mg/kg germanium per 10 ha), and Ge-2(cultivated with 500 kg of rough stone powder containing 1.6 mg/kg germanium per 10 ha). The mean total Ge level in the Ge-2 sample was 20.47 ppb. The levels of Ca and Na in the Ge-2 rice increased by 65.12 and 110.28%, respectively, when compared to the control, whereas the Zn, Mn, Fe, Mg and K content decreased by 11.44~30.50%. No significant difference in the percentage weight of C and O was observed among samples. The order of the percentage weight of P, S, and Cl was Ge-2>Ge-1>CON. The free amino acids were higher in samples from the Ge-1 and Ge-2 groups than in samples from the control. The GABA($\gamma$-aminobutyric acid) amount in the Ge-2 products was significantly high compared to other groups. The micro structure of Ge-2 showed a firmer network than the control and had a macroporous structure. Conversely, the Ge-2 products had higher scores for stickiness, hardness and overall taste when compared to the other groups. These results suggest that rice treated with rough stone powder containing germanium can be used in the production of commercially-desired functional rice.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.55-55
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• 2011

질소 등을 GST225 상변화재료에 첨가시켜 비저항을 증가시킴으로서 PCRAM의 동작 전류를 감소시킨 연구가 선행된 바 있다. 본 연구에서는 GST225와 달리 고속 동작 특성을 갖는 것으로 널리 알려진 Ge-doped SbTe (GeST) 상변화 재료에 Carbon을 첨가하여 박막 특성을 연구하여 동작 전류 감소의 가능성을 타진하였다. 실험을 위한 박막 제작을 위해 2 inch size의 GeST 및 C doped GeST (C-GeST) single target을 이용하여 RF magnetron co-sputtering 하였다. 박막은 carbon이 첨가되지 않은 GeST와 carbon 첨가량이 늘어나는 순서로 C-GeST 1, C-GeST 2, C-GeST 3로 구성된다. 이 때 제작한 박막의 composition analysis를 위해 XRF/RBS/AES가 사용되었고 제작된 박막의 기본적인 특성평가를 위해 resistivity(${\rho}$)와 crystallzation temp.(Cx), surface morphology(AFM), x-ray diffraction pattern(XRD)를 측정하였다. 실험결과 GeST, C-GeST 1, C-GeST 2, C-GeST 3 박막의 Cx는 각각 209, 225, 233, $245^{\circ}C$로 측정되어 carbon 첨가량이 증가됨에 따라 결정화 온도가 증가되는 것을 알 수 있었다. 또한 ${\rho}$도 마찬가지로 annealing 온도를 약 $320^{\circ}C$로 할 경우 ${\rho}$(as-dep)와 ${\rho}$(crystalline) 모두 0.03 / $2.61*10^{-6}$, 0.08 / $7.93*10^{-6}$, 0.09 / $11.99*10^{-6}$, 0.13 / $13.49*10^{-6}{\Omega}{\cdot}m$로 증가하였다. 증가된 ${\rho}$의 원인이 박막의 grain size의 감소라고 단언 할 수는 없으나 AFM 측정결과 grain이라고 추측되는 박막 feature들의 size가 점차 감소하는 것을 확인하였다.

• Journal of the Korean Society of Food Science and Nutrition
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• v.22 no.6
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• pp.702-708
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• 1993

The study was attempted to elucidate the mechanism of GE-132(100mg/kg, p.o. for 6 weeks) on the metabolism of bromobenzene (460mg/kg, i.p. bid, for 2 days), which has potent carcinogenicity, mutagenicity and hepatotoxicity. It showed that activities of cytochrome p-450, aminopyrine demethylase and aniline hydroxylase, which have epoxide generating property, were not changed by GE-132 treatment. On the other hand, epoxide hydrolase was not changed but that glutathione S-transferase was significantly increased by GE-132 treatment. And also ${\gamma}-glutamylcysteine$ synthetase was not changed following the GE-132 treatment, but the activity of glutathione reductase was significantly increased. The level of hepatic glutathione which was decreased by bromobenzene recovered markedly by GE-132 pretreatment. It is concluded that the mechanism for the observed effect of GE-132 on bromobenzene metabolism is due to the induction of glutathione S-transferase.

• Korean Journal of Medicinal Crop Science
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• v.24 no.3
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• pp.214-221
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• 2016

Background: This study was conducted to investigate the effects of germanium treatment on the growth and organic germanium production in the roots of Oplopanax elatus plantlets. Methods and Results: O. elatus plantlets were cultured in Murashige and Skoog (MS) medium with different concentrations of germanium dioxide ($GeO_2$) to analyze optimum growth conditions. Exogenous treatment of $10mg/{\ell}\;GeO_2$ promoted growth and an increase in the contents of chlorophyll a, b and carotenoid in O. elatus. The germanium accumulation and production in roots of O. elatus plantlets treated with organic germanium reached the highest levels. The growth of the aerial and underground portion of O. elatus with organic germanium was greater than that of the control. The accumulation and production of organic germanium reached the highest level ($40.89{\mu}g/plantlet$) with the treatment of $50mg/{\ell}\;GeO_2$. Antioxidant activity measured by DPPH and ABTS assays also increased with the germanium treatment and improved the DPPH and ABTS radical activity by 200% compared with that in the control. In addition, the total phenol and flavonoid contents of the plantlets with a treatment of $50mg/{\ell}\;GeO_2$ were higher than in the control. Conclusions: Taken together, the growth of O. elatus was increased with the treatment of $50mg/{\ell}\;GeO_2$ germanium and the biological references improved, with increased antioxidant activity and organic germanium production.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.451-456
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• 1991

Electrical properties of 0.15 mol% Y2O3 doped semiconducting BaTiO3 ceramics have been investigated as functions of Pb5Ge3O11 contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 1150$^{\circ}C$ to 1300$^{\circ}C$). The low-temperature sintered BaTiO3 ceramics above 1150$^{\circ}C$ show increase of Curie temperature due to the diffusion of Pb+2 ions, and their PTCR effects decrease. As the sintering temperature increases the room temperature resistance decreases due to the growth of the grain, but the room temperature resistance increases with the increase of the Pb5Ge3O11 contents by the formation of thick insulating layers at the grain boundary.