• 약학회지
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• 제42권3호
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• pp.330-335
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• 1998

Gastrodia elata (GE) is a oriental medicinal herb which has been used traditionally for the treatment of various brain diseases including convulsion and epilepsy. In orde r to examine the mechanism of anticonvulsive effect, we treated the methanol extract of GE (500mg/kg, P.0) to the pentylenetetrazole (PTZ)-induced convulsive rats. Methanol extracts of GE significantly inhibited (35%) the convulsion state as well as the level of lipid peroxidation (25%) in the brain. The ether fraction of methanol extracts among the others effectively ibhibited in vitro lipid peroxidation dose dependently ($5.O{\times}10^{-6}{\sim}2.O{\times}1O^{-5}g/ml$). The scavenging effect on hydroxy radicals was found in all the fractions of ether, butanol, and dichloromethane. These results suggest that the anticonvulsive effect of GE is possibly due to the antioxidative effects of the active components in GE.

• 한국재료학회지
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• 제18권6호
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.55-55
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• 2011

질소 등을 GST225 상변화재료에 첨가시켜 비저항을 증가시킴으로서 PCRAM의 동작 전류를 감소시킨 연구가 선행된 바 있다. 본 연구에서는 GST225와 달리 고속 동작 특성을 갖는 것으로 널리 알려진 Ge-doped SbTe (GeST) 상변화 재료에 Carbon을 첨가하여 박막 특성을 연구하여 동작 전류 감소의 가능성을 타진하였다. 실험을 위한 박막 제작을 위해 2 inch size의 GeST 및 C doped GeST (C-GeST) single target을 이용하여 RF magnetron co-sputtering 하였다. 박막은 carbon이 첨가되지 않은 GeST와 carbon 첨가량이 늘어나는 순서로 C-GeST 1, C-GeST 2, C-GeST 3로 구성된다. 이 때 제작한 박막의 composition analysis를 위해 XRF/RBS/AES가 사용되었고 제작된 박막의 기본적인 특성평가를 위해 resistivity(${\rho}$)와 crystallzation temp.(Cx), surface morphology(AFM), x-ray diffraction pattern(XRD)를 측정하였다. 실험결과 GeST, C-GeST 1, C-GeST 2, C-GeST 3 박막의 Cx는 각각 209, 225, 233, $245^{\circ}C$로 측정되어 carbon 첨가량이 증가됨에 따라 결정화 온도가 증가되는 것을 알 수 있었다. 또한 ${\rho}$도 마찬가지로 annealing 온도를 약 $320^{\circ}C$로 할 경우 ${\rho}$(as-dep)와 ${\rho}$(crystalline) 모두 0.03 / $2.61*10^{-6}$, 0.08 / $7.93*10^{-6}$, 0.09 / $11.99*10^{-6}$, 0.13 / $13.49*10^{-6}{\Omega}{\cdot}m$로 증가하였다. 증가된 ${\rho}$의 원인이 박막의 grain size의 감소라고 단언 할 수는 없으나 AFM 측정결과 grain이라고 추측되는 박막 feature들의 size가 점차 감소하는 것을 확인하였다.

• 한국진공학회지
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• 제8권2호
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• pp.148-152
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• 1999

the low temperature magnetoresistance effect, electron mobilities, and 2 Dimensional electron Gases (2DEG) properties were investigated in $Si/Si_{1-x}Ge_x$ quantum well devices. N-type $Si/Si_{1-x}Ge_x$ structures were fabricated by utilizing a gas source Molecular Beam Epitaxy (GSMBE). Thermal oxidation was carried out in a dry O atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by using a Hall effect and a magnetoresistant effect at low temperatures down to 0.4K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2DEG) in s tensile strained Si quantum well. The electron sheet density (ns) of $1.5\times10^{12}[\textrm{cm}^{-2}]$ and corresponding electron mobility of 14200 $[\textrm{cm}^2V^{-1}s^{-1}]$ were obtained at a low temperature of 0.4K from $Si/Si_{1-x}Ge_x$ structures with thermally grown oxides.

• 한국세라믹학회지
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• 제39권2호
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• pp.210-215
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• 2002

본 연구에서는 $CO_2$ 흡수단이 있는 4.3${\mu}m$ 파장대역의 광학 필터를 전자빔 증발 장치를 이용하여 Ge와 $SiO_2$ 박막을 다층으로 설계, 제작하였다. 제작된 Ge/$SiO_2$ 다층박막 필터는 기준파장에 대하여 반가폭(FWHM) 204nm, 투과율 58.2%, 금지대역에 대하여 5% 이하의 차단특성을 나타내는 협대역 투과필터 (narrow band-pass filter: BPF)특성을 나타내었다. 광학적 대역투과필터를 사용하여, FT-IR내에 감지실을 설치하여 단식 필터(KBr+BPF)와 복식필터(BPF+BPF)의 $CO_2$ 농도별 감도특성을 비교측정 하였다. 측정시 $CO_2$의 농도는 500ppm을 단위로 500∼5000ppm의 범위까지 관찰하였는데, 복식 필터는 단식 필터에 비해 투과율이 낮았지만, 우수한 감도 특성을 보였다.

• 전자공학회논문지A
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• 제28A권5호
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• pp.380-386
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• 1991

Hydrogen plasma-assisted epitaxial(PAE) growth of GaAs/Si and GaAs/Ge/Si with Ge buffer layer has been investigated. By means of photoluminescence, Nomarski microscopu, and $\alpha$-step, it could be known that GaAs on Si with Ge buffer layer has better crystalline quality than GaAs on Si without Ge buffer layer. The stoichiometry of GaAs layer on Si was confirmed by the depth profile of Auger electron spectroscope (AES). Also the native oxide(SiO$_2$) layer on Si substrate was plama-etched and the removal of the oxide layer was confirmed by AES. Photoluminescence peak wavelength of GaAs/Ge/Si with Ge buffer of 1\ulcorner thickness and GaAs growth rate of 160$\AA$/min was 8700$\AA$and FWHM was 12$\AA$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.74.1-74.1
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• 2007

• 한국약용작물학회지
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• 제24권3호
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• pp.214-221
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• 2016

Background: This study was conducted to investigate the effects of germanium treatment on the growth and organic germanium production in the roots of Oplopanax elatus plantlets. Methods and Results: O. elatus plantlets were cultured in Murashige and Skoog (MS) medium with different concentrations of germanium dioxide ($GeO_2$) to analyze optimum growth conditions. Exogenous treatment of $10mg/{\ell}\;GeO_2$ promoted growth and an increase in the contents of chlorophyll a, b and carotenoid in O. elatus. The germanium accumulation and production in roots of O. elatus plantlets treated with organic germanium reached the highest levels. The growth of the aerial and underground portion of O. elatus with organic germanium was greater than that of the control. The accumulation and production of organic germanium reached the highest level ($40.89{\mu}g/plantlet$) with the treatment of $50mg/{\ell}\;GeO_2$. Antioxidant activity measured by DPPH and ABTS assays also increased with the germanium treatment and improved the DPPH and ABTS radical activity by 200% compared with that in the control. In addition, the total phenol and flavonoid contents of the plantlets with a treatment of $50mg/{\ell}\;GeO_2$ were higher than in the control. Conclusions: Taken together, the growth of O. elatus was increased with the treatment of $50mg/{\ell}\;GeO_2$ germanium and the biological references improved, with increased antioxidant activity and organic germanium production.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.668-675
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• 2013

We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp $H_2O_2$ (30%) and 3 vp $CH_3COOH$ (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of $Si_{0.8}Ge_{0.2}$ layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

• 한국세라믹학회지
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• 제28권6호
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• pp.451-456
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• 1991

Electrical properties of 0.15 mol% Y2O3 doped semiconducting BaTiO3 ceramics have been investigated as functions of Pb5Ge3O11 contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 1150$^{\circ}C$ to 1300$^{\circ}C$). The low-temperature sintered BaTiO3 ceramics above 1150$^{\circ}C$ show increase of Curie temperature due to the diffusion of Pb+2 ions, and their PTCR effects decrease. As the sintering temperature increases the room temperature resistance decreases due to the growth of the grain, but the room temperature resistance increases with the increase of the Pb5Ge3O11 contents by the formation of thick insulating layers at the grain boundary.