• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.85-90
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• 2003

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were monoclinic structure. The temperature dependence of optical energy 9ap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.31-36
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• 2002

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co$ single crystals were monoclinic structure. The temperature dependence of optical energy gap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1287-1288
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• 2008

In the past work, we showed that $Ge_1Se_1Te_2$ thin films provide a promising alternative for PRAM applications to overcome the problems of conventional $Ge_2Sb_2Te_5$ PRAM devices. However, $Ge_1Se_1Te_2$ thin films were unstable at SET and RESET process. Because of unstable state and its melting temperature, we alloyed As for 5wt%, 10wt% and 15wt% respectively. The phase transition temperature of $Ge_1Se_1Te_2$-only thin film is found to be 213$^{\circ}C$ while As 10wt% alloyed $Ge_1Se_1Te_2$ showed phase transition at 242$^{\circ}C$ with more stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.133-136
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• 2001

In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of meta1(Ag) and chalcogenide( $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ ). The holographic grating in these thin flims has been formed using a linealy polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers. As the results, we found that the diffraction efficiency of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers were 1.7% and 2.5% respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.133-136
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• 2001

In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of metal(Ag) and chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). The holographic grating in these thin films has been formed using a lineally polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers. As the results, we found that the diffraction efficiency of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers were 1.7% and 2.5% respectively

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1066-1069
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• 2004

This paper shows the characteristic of diffraction efficiency on film of amorphous AsGeSeS according to Ag doping. We compare amorhous AsGeSeS with the characteristics of AsGeSeS/Ag (10nm) and AsGeSeS/Ag (20m). We made film such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8on$ the basis of 633nm, which is wavelength of recording laser(He-Ne). The highest diffraction efficiency on AsGeSeS film is $\lambda/4$, followed by $\lambda/2$, $\lambda$, $\lambda/8$. In the case of Ag 10nm, it is followed by $\lambda/4$, $\lambda/2$, $\lambda$, $\lambda/8$. On the occasion of Ag 20nm, it seems that the highest is $\lambda/2$, followed by $\lambda$, $\lambda/4$, $\lambda/8$. In other words, it appears that the highest point on AsGeSeS(158nm) single layer is 0.09%, the one of AsGeSeS(158nm)/Ag(10nm) is 1.6%, and the point of AsGeSeS(316nm)/Ag(20nm) is3.2%. Comparing the highest point in each case, we conclude that there is a distinctive increase in diffraction efficiency according the effect on Ag doping.

• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.239-247
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• 1995

Chalcogenide glasses with compositions of Ge10Se90-xTex(X=0~50 at.%) were prepared in order to investigate the effects of Te substitution on the transmission characteristics of Ge-Se glasses in the 8~12 ${\mu}{\textrm}{m}$ wavelength region. Absorption coefficients were observed to decrease with Te addition, indicating the improved transmission capabilities of Ge-Se-Te glasses as compared to binary Ge-Se glasses. XRD analysis of crystallized glasses suggested the formation of weaker Se-Te and/or Te-Te bonds with addition of Te substituting for Se in stronger Se-Se bonds. Incorporation of Te in excess of 20at% resulted in the formation of hexagonal Te phases when crystallized. It is speculated that the presence of Te-Te bonds with highly metallic bond character resulted in the enhanced crystallization tendencies of glasses. Fromation of Te-rich chains through gradual replacement of Se-Se with Se-Te and/or Te-Te bonds was further supported by decreases in glass transition and crystallization temperatures.