• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.107-112
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• 2020

Recently, the atomically thin transition-metal dichalcogenide (TMD) semiconductors have attracted much attention owing to their remarkable properties such as tunable bandgap with high carrier mobility, flexibility, transparency, etc. However, because these TMD materials have a significant drawback that they are easily degraded in an ambient environment, various attempts have been made to improve chemical stability. In this research article, I report a method to improve the air stability of WSe₂ one of the TMD materials via surface passivation with an h-BN insulator, and its application to field-effect transistors (FETs). With a modified hot pick-up transfer technique, a vertical heterostructure of h-BN/WSe₂ was successfully made, and then the structure was used to fabricate the top-gate bottom-contact FETs. The fabricated WSe₂-based FET exhibited not only excellent air stability, but also high hole mobility of 150 ㎠/Vs at room temperature, on/off current ratios up to 3×10⁶, and 192 mV/decade of subthreshold swing.

• Korean Journal of Ecology and Environment
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• v.41 no.3
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• pp.360-366
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• 2008

The spatial and temporal variations of the high turbid water by a single event of heavy rain (total 299.1 mm and daily maximum 99.4 mm) were studied in Andong Reservoir, which has hypolimnetic discharges. Turbid water entered into the reservoir, was isolated from the bottom at the midreservoir and then passed through the metalimnion as an interflow current in the lacustrine zone. Maximum turbidity was 290 NTU at 16 m depth of the midreservoir, but the initial turbidity showed about 10 NTU in the reservoir before the rainfall. Turbid water in the reservoir affected to increase the withdrawal turbidity from the 3rd day after the rainfall, the maximum turbidity was 129 NTU at 5th day after the rainfall. Turbid water that flew towards the downreservoir distributed within 5 m above the outlet gate of the intake tower, showing the maximum turbidity, and that was decreased in its thickness and concentration by discharging through the intake tower. It has taken 38 days until the turbidity in the withdrawal reduced to 30 NTU, and 87 days to reduce the turbidity to the way when it was before the rainfall, with the correlation coefficient of 0.96 and 0.97, respectively. Turbid water was withdrawn from the reservoir by entraining into the intake tower as a form of the interflow, and not be settled down to the bottom of the reservoir. Therefore, we assessed that the depth of the withdrawal was appropriately positioned in Andong Reservoir, so as to withdraw the turbid water effectively from the reservoir.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.4
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• pp.24-31
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• 2007

Up to date, a lot of bus protocol and bus architecture are released though most of them are based on the shared bus architecture and inherit the limitation of performance. SNP (SoC Network Protocol), and hence, SNA (SoC Network Architecture) which are high performance on-chip-bus protocol and architecture, respectively, have been proposed to solve the problems of the conventional shared bus. We refine the SNA specification and improve the performance and functionality. The performance of the SNA is improved by supporting simultaneous routing for bus request of multiple masters. The internal routing logic is also improved so that the gate count is decreased. The proposed SNA employs XSNP (extended SNP) that supports almost perfect compatibility with AMBA AHB protocol without performance degradation. The hardware complexity of the improved SNA is not increased much by optimizing the current routing logic. The improved SNA works for IPs with the original SNP at its best performance. In addition, it can also replace the AMBA AHB or interconnect matrix of a system, and it guarantees simultaneous multiple channels. That is, the existing AMBA system can show much improved performance by replacing the AHB or the interconnect matrix with the SNA. Thanks to the small number of interconnection wires, the SNA can be used for the off-chip bus system, too. We verify the performance and function of the proposed SNA and XSNP simulation and emulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.1-7
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• 2008

Magnetic Tunneling Junction (MTJ) has been used as a nonvolatile universal storage element mainly in memory technology. However, according to several recent studies, magneto-logic using MTJ elements show much potential in substitution for the transistor-based logic device. Magneto-logic based on MTJ can maintain the data during the power-off mode, since an MTJ element can store the result data in itself. Moreover, just by changing input signals, the full logic functions can be realized. Because of its programmability, it can embody the reconfigurable magneto-logic circuit in the rigid physical architecture. In this paper, we propose a novel 3-bit arbitrary magneto-logic circuit beyond the simple combinational logic or the short sequential one. We design the 3-bit magneto-logic which has the most complexity using MTJ elements and verify its functionality. The simulation results are presented with the HSPICE macro-model of MTJ that we have developed in our previous work. This novel magneto-logic based on MTJ can realize the most complex logic function. What is more, 3-bit arbitrary logic operations can be implemented by changing gate signals of the current drivel circuit.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.4
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• pp.659-666
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• 2006

Servo-motors are used as key components of automated system by performing precise motion control as accurate positioning and accurate speed regulation in response to the commands from computers and sensors. Especially, the linear brushless servo-motors have numerous advantages over the rotary servo motors which have connection with the friction induced transfer mechanism such as ball screws, timing belts, rack/pinion. This paper proposes an estimation method of unknown motor system parameters using the informations from the sinusoidal driving type linear brushless DC motor dynamics and outputs. The estimated parameters can be used to tune the controller gain and a disturbance observer. In order to meet this purpose high performance Digital Signal Processor, TMS320F240, designed originally for implementation of a Field Oriented Control(FOC) technology is adopted as a controller of the liner BLDC servo motor. Having A/D converters, PWM generators, rich I/O port internally, this servo motor application specific DSP play an important role in servo motor controller. This linear BLDC servo motor system also contains IPM(Intelligent Power Module) driver and hail sensor type current sensor module, photocoupler module for isolation of gate signals and fault signals.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• The Korean Journal of Malacology
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• v.20 no.2
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• pp.165-169
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• 2004

The BLAST server for the mollusk was constructed on the basis of the Intel Server Platform SC-5250 dual Xeon 2.8 GHz cpu and Linux operating system. After establishing the operating system, we installed NCBI (National Center for Biotechnology Information) WebBLAST package after web server configuration for cgi (common gate interface) (http://chimp.kribb.re.kr/mollusks). To build up the stand alone blast, we conducted as follows: First, we downloaded the genome information (mitochondria genome information), DNA sequences, amino acid sequences related with mollusk available at NCBI. Second, it was translated into the multifasta format that was stored as database by using the formatdb program provided by NCBI. Finally, the cgi was used for the Stand Alone Blast server. In addition, we have added the vector, Escherichia coli, and repeat sequences into the server to confirm a potential contamination. Finally, primer3 program is also installed for the users to design the primer. The stand alone BLAST gave us several advantages: (1) we can get only the data that agree with the nucleotide sequence directly related with the mollusks when we are searching BLAST; (2) it will be very convenient to confirm contamination when we made the cDNA or genomic library from mollusks; (3) Compared to the current NSBI, we can quickly get the BLAST results on the mollusks sequence information.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.315-320
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• 2000

We have investigated the crystal structure and electrical properties of Pt/SBT/$ZrO_2$/Si (MFIS) and Pt/SBT/Si (MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$ZrO_2$/Si structure had larger grain than that of SBT/Si structure. $ZrO_2$ film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier by the analysis of AES. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$ZrO_2$/Pt/$SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-volt-age characteristics, the memory windows of Pt/SBT (210 nm)/$ZrO_2$ (28 nm)/Si structure were in the range of 1~l.5 V at the applied voltage of 4~6 V. The current densities of Pt/SBT/ZrO$_2$/Si with as -deposited Pt electrode and annealed at $800^{\circ}C$ in $O_2$ambient were $8\times10^{-8} A/\textrm{cm}^2$ and $4\times10^{-8}A/\textrm{cm}^2$ , respectively.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.42 no.2 s.302
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• pp.49-58
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• 2005

A new soft switching three-phase PWM rectifier with simple circuit configuration and high efficiency has been developed. The proposed circuit is a kind of the auxiliary resonant commutated Pole(ARCP)converter The conventional ARCP converter requires three-auxiliary reactors and six-auxiliary switches for the soft switching auxiliary circuit and for these switching elements, a gate drive circuit and a control circuit are required, resulting in high part as a disadvantage. In the main circuit proposed in this paper, the auxiliary soft switching circuit is composed of two-auxiliary reactors, two-auxiliary switches and several diodes. In addition, common use of the PWM control circuit for two-switches will make the control circuit of the auxiliary switches simple. By means of function of the soft switching auxiliary circuit, the main switching element performs zero voltage switching operation and the auxiliary switches perform the zero current switching. In this paper, the circuit configuration and the operational analysis of the proposed circuit are described at first and then, experimental results will be reported. By using a prototype with 5[kW] capacity, the conversion efficiency of maximum $98.8[\%]$ and the power factor of $99[\%]$ or higher were obtained.