• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
• /
• pp.82-85
• /
• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• 한국분말재료학회지
• /
• 제19권5호
• /
• pp.356-361
• /
• 2012

The ultra-fine and less agglomerated titanium carbonitride particles were successfully synthesized by magnesiothermic reduction with low feeding rate of $TiCl_4+1/4C_2Cl_4$ solution. The sub-stoichiometric titanium carbide ($TiC_{0.5{\sim}0.6}$) particles were produced by reduction of chlorine component by liquid magnesium at $800^{\circ}C$ of gaseous $TiCl_4+1/4C_2Cl_4$ and the heat treatments in vacuum were performed for 5 hours to remove the residual magnesium and magnesium chloride mixed with produced $TiC_{{\sim}0.5}$. The final $TiC_{{\sim}0.5}N_{0{\sim}0.5}$ particle with near 100 nm in mean size and high specific surface area of $65m^2/g$ was obtained by nitrification under nitrogen gas at $1,150^{\circ}C$ for 2 hrs.

• 열처리공학회지
• /
• 제8권4호
• /
• pp.279-288
• /
• 1995

To investigate the characteristics of nitrocarburizing for high carbon chromium bearing steel, it was undertaken 4 hours holding at $850^{\circ}C$ in the atmosphere containing 60% endothermic gas and 40% ammonia. The microstructure of nitrocarburized surface consists of ${\varepsilon}-Fe_{2-3}N$, ${\gamma}^{\prime}-Fe_4N$, $Fe_3C$ and $Fe_3$(C,N), and the ${\varepsilon}$-nitride was rich in the surface-internal part. The nitrocarburized surface contains a larger volume fraction of primary carbonitrides and has more retained austenite and is slightly harder than the interior.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1406-1408
• /
• 2006

Plastic substrate for flexible TFT LCD is developed. The gas barrier, optical properties and conductivity in the substrate is improved through depositing silicon oxide/nitride layer and ITO layer, coating polymer layer on plastic film by sputtering process and wet coating process. The whole production process of the plastic substrate is guaranteed the productivity by using roll to roll process.

• 한국세라믹학회지
• /
• 제34권2호
• /
• pp.157-162
• /
• 1997

소결온도 및 열처리에 의하여 미세조직을 변화시킨 질화규소의 파괴강도특성 및 그 신뢰성 평가를 하였다. 결정립이 클수록 파괴인성치는 증가하였지만 굽힘강도는 저하하였다. 균열재의 파괴응력 $\sigma$c와 등가균열길이 ae와의 관계는 프로세스 존 크기 파기기준에 의한 계산 결과와 매우 잘 일치하였다. 그리고 굽힘파괴응력 $\sigma$F와 파괴인성치 KIC의 통계적 특성을 고려한 파괴평가고건을 제안하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
• /
• pp.276-278
• /
• 1997

The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the $CH_4/H_2$/Ar gas mixture. Dry etching characteristics such as etch rate, anisotropic etching profile and so on, for the III-V nitride layers were investigated using Planar ICP Etcher, based on the plasma characteristic as a variation of plasma process parameters.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.238.1-238.1
• /
• 2014

이번 연구는 system-on-panel에 적용하기 위한 비휘발성 메모리의 메모리 윈도우 특성 향상에 관한 연구이다. 이를 위해 SiO2/SiNX/SiOXNY의 메모리 구조를 이용하였으며, 채널층으로 투명한 비정질 인듐-주석-아연-산화물을 이용하였다. N형 물질의 특성인 수많은 전자로 인해 erasing의 어려움이 발생하는데 이는 빛과 전압의 동시 인가로 해결하였다. 전하트랩층은 비휘발성 메모리에서 가장 널리 이용되는 질화막을 이용하였으며, SiH4과 NH3의 비율은 8대 1에서 1대 2까지 이용하였다. 이번 연구에서 SiH4과 NH3의 비율이 2대 1일 때 쓰기 전압 +13V와 지우기 전압 -6V에서 약 3.7V의 높은 메모리 윈도우를 얻을 수 있었다.

• 한국정밀공학회지
• /
• 제27권7호
• /
• pp.101-108
• /
• 2010

Domestic three-way catalyst satisfies exhaust gas conversion efficiency or pressure drop etc. but doesn't satisfy thermal durability. Thermal stress analysis for three-way catalyst was performed based on experimental temperature distribution. Thermal safety of three-way catalyst was estimated by safety factor. Aspect ratio variable had the most significant effect on thermal stress. Thickness variable had the least significant effect on thermal stress. Optimal conditions for premature failure prevention of three-way catalyst were as follows : (1) aspect ratio of three-way catalyst : 0.6:1 (2) 2.84mm thick (3) silicon nitride. The safety of Taguchi-optimized three-way catalyst were 4.7 times higher than that of existent three-way catalyst.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.305-305
• /
• 2012

The organic-inorganic hybrid polymer thin films were deposited using the gas phase method which known as molecular layer deposition (MLD). Titaniumchloride (TiCl4) and 1,4-phenylenediamine (PD) were used as monomers to deposit hybrid polymer. Self-terminating nature of TiCl4 and PD reaction were demonstrated by growth rate saturation versus precursors dosing time. Infrared spectroscopic and X-ray photoelectron spectroscopy were employed to determine the chemical composition and state of hybrid polymer thin films. Layer by layer growth was showed by increasing UV-VIS absorption peak of hybrid polymer thin films.

• 한국분말재료학회지
• /
• 제8권3호
• /
• pp.174-178
• /
• 2001

The microstructure and mechanical properties of $Si_3N_4/BN $nanocomposites synthesized by chemical processing were investigated. The nanocomposites containing 15 vol% hexagonal BN (h-BN) were fabricated by hot-pressing $\alpha-Si_3N_4$powders covered with turbostratic BN (t-BN). The t-BN coating on $\alpha-Si_3N_4$particles was prepared by heating $\alpha-Si_3N_4$ particles covered with a mixture of boric acid and urea in hydrogen gas. TEM observations of this nanocomposite revealed that nano-sized h-BN particles were homogeneously dispersed within $Si_3N_4$grains as well as at grain boundaries. The strength and thermal shock resistance were significantly improved in comparison with the $Si_3N_4/BN$ microcomposites.