• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.743-746
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• 2000

The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.114-122
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• 2024

NF₃, Chamber cleaning gas, has a high Global Warming Potential (GWP) of 17,000, causing significant greenhouse effects. Reducing gas usage during the cleaning process is crucial while increasing the cleaning Rate and reducing cleaning standard deviation (Stdev). In a previous study with a 6-inch PECVD chamber, a multiple linear regression analysis showed that Power and Pressure had no significant effect on the cleaning Rate because of their P-values of 0.42 and 0.68. The weight for Flow is 11.55, and the weights for Power and Pressure are 1.4 and 0.7. Due to the limitations of the research equipment, which differed from those used in actual industrial settings, it was challenging to assess the effects in actual industrial environment. Therefore, to show an actual industrial environment, we conducted the cleaning process on a 12-inch PECVD chamber, which is production-level equipment, and quantitatively analyzed the effects of each variable. Power, Pressure, and NF3 Flow all had P-values close to 0, indicating strong statistical significance. The weight for Flow is 15.68, and the weights for Power and Pressure are 4.45 and 5.24, respectively, showing effects 3 and 7 times greater than those with the 6-inch equipment on the cleaning rate. Additionally, we analyzed the cleaning Stdev and derived that there is a trade-off between increasing the cleaning Rate and reducing the cleaning Stdev.

• Applied Chemistry for Engineering
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• v.29 no.2
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• pp.229-236
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• 2018

A customized cleaning agent was investigated for improving the performance decreased by the pollution of collecting plates in an electric fume collector (EFC) which was developed and applied for the purification of effluent gas including oil mist from the textile industry. The pollutants on the surface of collecting plates were blackened by the condensation of oil mist for a long time and difficult to remove by general cleaning agents. The composition of an optimized cleaning agent consisted of alkali, alcohol, glycol and non-ionic surfactant sources was determined by considering the pollutant properties and effect on the damage of the basic metal of collecting plate and so on. The developed cleaning agent solution diluted by 9.1% was applied to the field test, and also the pollutants strongly adhered on collecting plate surfaces were successfully removed by a simple spraying method. The effluent gas purification efficiency of EFC increased significantly by cleaning of collecting plates.

• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.284-287
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• 1999

CuO catalyst-coated alumino-silicate fiber filters were prepared for the simultaneous removal of particulate matter and gaseous contaminants such as NOx and SOx. Hot gas cleaning experiments similar to Shell UOP process other than the catalyst supporting materials were carried out between 300 and $500^{\circ}C$ for the evaluation of the gas removal efficiency of the catalytic filter. Experimental results showed that removel efficiency for $SO_2$ was greater than 99% in the temperature range 450~$500^{\circ}C$ and more than 90% of NO was collected between 350 and $370^{\circ}C$. It was found that the higher the CuO content, the higher the removal efficiency for $SO_2$. Removal efficiency for NO was more affected by the gas cleaning temperature than by the CuO content in the catalyst-filter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Journal of the Korean Applied Science and Technology
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• v.32 no.3
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• pp.372-376
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• 2015

The experiment was performed using the cleaning precipitator To investigate the absorption efficiency of the $SO_X/NO_X$ of the aqueous ammonia solution. Concentration of the cleaning liquid is 0.1, 0.5, and 1.0% with increasing absorption efficiency has improved. However, the reaction shown only a difference in time. Absorption efficiency has improved in accordance with the gas residence time. When the direction of the same gas and the cleaning liquid is determined that there is the effect of increasing the residence time. The relative impact of $SO_X$ and $NO_X$ is this likely to react slower than $SO_X/NO_X$. The yield is determined to require adjustment of the cleaning dust collector according to the concentration of the next gas.

• Journal of Hydrogen and New Energy
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• v.22 no.4
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• pp.474-480
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• 2011

Hydrocarbon is required to be converted to pure hydrogen without carbon monooxide (CO) for polymer exchange membran fuel cell (PEMFC) applications. In this paper, CO cleaning processes as the downstream of Dimethyl ehter (DME) autothermal reforming process were performed in micro-reactors. Our study suggested two kinds of water gas shift (WGS) reaction process: High Temperature shift (HTS) - Low Temperature shift (LTS), Middle temperature shift (MTS). Firstly, using perovskite catalyst for MTS was decreased effieiciency since methanation. Using HTS-LTS the CO concentration was decreased about 2% ($N_2$ & $H_2O$ free) with the reaction temperature of $420^{\circ}C$ and $235^{\circ}C$ for HTS and LTS, respectively. As the final stage of CO cleaning process, preferential oxidation (PROX) was applied. The amount of additional oxygen need 2 times of stoichiometric at $65^{\circ}C$. The total conversion reforming efficiency of 75% was gained.

• Journal of Surface Science and Engineering
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• v.34 no.5
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• pp.403-408
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• 2001

In this work, the cyclic perfluorinated ether (c-C$_4$F$_{8}$O) with very high destructive removal efficiency (DRE) than other alternative gases, such as $C_3$F$_{8}$, c-C$_4$F$_{8}$ and NF$_3$ was used as an alternative process chemical. The plasma cleaning of silicon nitride using gas mixtures of c-C$_4$F$_{8}$O/O$_2$ and c-C$_4$F$_{8}$O/O$_2$+ $N_2$ was investigated in order to evaluate the effects of adding $N_2$ to c-C$_4$F$_{8}$O/O$_2$ on the global warming effects. Under optimum condition, the emitted net perfluorocompounds (PFCs) during cleaning of silicon nitride were quantified and then the effects of additive $N_2$ by obtaining the destructive removal efficiency (DRE) and the million metric tons of carbon equivalent (MMT-CE) were calculated. DRE and MMTCE were obtained by evaluating the volumetric emission using. Fourier transform-infrared spectroscopy (FT-IR). During the cleaning using c-C$_4$F$_{8}$O/O$_2$+$N_2$, DRE values as high as (equation omitted) 98% were obtained and MMTCE values were reduced by as high as 70% compared to the case of $C_2$F$_{6}$O$_2$. Recombination characteristics were indirectly investigated by combining the measurements of species in the chamber using optical emission spectroscopy (OES), before and after the cleaning, in order to understand any correlation between plasma and emission characteristics as well as cleaning rate of silicon nitride.silicon nitride.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.3
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• pp.135-140
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• 2020

Since the process gas that is essential in the semiconductor process is a harmful gas, it is an essential task to solve it in an environmentally friendly manner. Currently, the cleaning technology used in the semiconductor process is mostly a wet cleaning based on hydrogen peroxide developed in the 1970s, and the SC-1 cleaning liquid for removing particles on the surface uses a mixture of ammonia and hydrogen peroxide. Therefore, environmental problems are caused, and economic problems caused by excessive water use are also serious. For this reason, the products developed through this study are used to decompose the process harmful gas from the chamber outlet into a harmless gas before entering the vacuum pump, or by incineration and the gaseous components are deposited on the pump. I want to solve the problem. In this paper, CPS (Confined Plasma Source) is proposed to save environment and improve productivity by replacing harmful gases (N2, CF4, SF6⋯., Etc) which are indispensable in semi-contamination process with innocuous gases or incineration with plasma, to study.

• The Journal of Korea Robotics Society
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• v.12 no.1
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• pp.65-77
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• 2017

In this paper, we introduce the pipe cleaning robot developed to clean the gas impurities of the iron manufacturing equipments. The pipe cleaning robot is composed of two driving modules and one cleaning module. 2-DOF joint units were developed for connections among the modules. To maximize the traction power of the driving parts, it became caterpillar type. The extension links have been developed to maintain the traction force in case the pipe inner diameters change. Three cleaning modules were developed for the effective cleaning in the pipe. The driving and cleaning performance tests of the pipe cleaning robot were proceeded in the field of the iron manufacturing equipments.