• Korean Chemical Engineering Research
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• 제57권2호
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• pp.259-266
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• 2019

Tuning of electro-optical properties of nano-structured $SnO_2:Ga$ powders in a micro drop fluidized reactor (MDFR) was highly effective to enhance the activities of powders to be used as sensor materials. The tuning was conducted continuously in a facile one-step process during the formation of powders. The microscopic hydrodynamic forces affected the band gap structure and charge transfer of $SnO_2:Ga$ powders through the oxygen and interfacial tin vacancies by providing plausible pyro-hydraulic conditions, which resulted in the decrease in the electrical resistance of the materials. The analyses of room-temperature photoluminescence (PL) spectra and FT-IR exhibited that the tuning could improve the surface activities of $SnO_2:Ga$ powders by adjusting the excitation as well as separation of electrons and holes, thus maximizing the oxygen vacancies at the surface of the powders. The scheme of photocatalytic mechanism of $SnO_2:Ga$ powders was also discussed.

• Tribology and Lubricants
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• 제36권6호
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• pp.320-323
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• 2020

Thin film coatings are commonly exploited to minimize wear and optimize the frictional behavior of various precision mechanical systems. The enhancement of thin film durability is directly related to the performance maximization of the system. Therefore, a fine approach to analyze the thin film wear behavior is required. Archard's equation is a representative and well-developed law that defines the wear coefficient, which is the probability of creating wear particles. A ploughing model is a commonly used model to determine the friction force during the abrasive contact. The equations demonstrate that the friction force and wear coefficient are inversely proportional to the hardness of the material. In this study, Archard's equation and ploughing models are modified with an effective hardness to minimize the gap between the experimental and numerical results. It is noted that the effective hardness is the hardness variation with respect to the penetration depth owing to the substrate effect. The nanoindentation method is utilized to characterize the effective hardness of Cu film. The wear coefficient value considering the effective hardness is more than three times higher than that without considering the effective hardness. The friction force predicted with the effective hardness agreed better with the results obtained directly from the friction force detecting sensor. This outcome is expected to improve the accuracy of friction and wear amount predictions.

• 한국의류학회지
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• 제47권1호
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• pp.123-136
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• 2023

To develop smart sportswear capable of measuring biometric data, we created a close-fitting pattern using two- and three-dimensional (2D and 3D, respectively) methods. After 3D virtual fitting, the tightness of each pattern was evaluated using image processing of contact points, mesh deviation, and cross-sectional shapes. In contact-point analysis, the 3D pattern showed high rates of contact with the body (84.6% and 93.1% for shirts and pants, respectively). Compared with the 2D pattern, the 3D pattern demonstrated closer contact at the lower chest, upper arm, and thigh regions, where electrocardiography and electromyography were primarily carried out. The overall average gap was also lower in the 3D pattern (5.27 and 4.66 mm in shirts and pants, respectively). In the underbust, waist, thigh circumference, and mid-thigh circumference, the cross-section distance between clothing and body was showed a statistically significant difference and evenly distributed in the 3D pattern, exhibiting more closeness. The tightness and fit of the 3D smart sportswear sensor pattern were successfully evaluated. We believe that this study is critical, as it facilitates the comparison of different patterns through visualization and digitization through 3D virtual fitting.

• 센서학회지
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• 제23권1호
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• 센서학회지
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• 제23권2호
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• 센서학회지
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• 제24권6호
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• 한국산학기술학회논문지
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• 제16권7호
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• pp.4828-4834
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• 2015

Action Time이란 탄이 공이가 뇌관을 격발한 순간부터 총구를 이탈할 때까지의 걸리는 시간을 말한다. 40mm 고속유탄은 장전되면서 격발되는 구조이므로 Action Time이 특정 시간 이내여야 탄피 고착과 같은 악작용을 방지 할 수 있다. 기존 40mm 고속유탄의 Action Time 계측은 신뢰성 있는 측정 장비의 부재로, 그동안 Action Time이 K4기관총 품질 보증에 적용되는 것에 어려움이 있었다. 본 연구에서는 다양한 센서 간 비교와 별도의 발사 장치 고안을 통해 정확한 Action Time을 측정하고자 하였다. 이 장치에서는 공이 부분에 설치된 광센서의 신호와 총열 부분에 설치된 와전류 탐촉자 신호 간 간격이 계측되고, 실시간으로 컴퓨터로 데이터가 전송되게 된다. 계측된 Action Time 결과가 시스템 요구 성능에 충족하는지 여부를 즉시 확인함으로써 40mm 고속유탄의 품질 보증에 중요한 역할을 할 것으로 기대된다.

• Journal of Information Display
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• 제11권1호
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• pp.8-11
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• 2010

In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to Zn (5:5, 4:6 and 3:7) were fabricated to control the amount of Zn in the passivation films. The Mg-Zn-F films were deposited onto the substrates and Zn was located in the gap between the lattices of $MgF_2$ without chemical metathesis in the Mg-Zn-F films. The thickness and optical transmittance of the deposited passivation films were approximately 200 nm and 80%, respectively. It was confirmed via electron dispersive spectroscopy (EDS) analysis that the Zn content of the film that was sputtered using a 4:6 ratio target was 9.84 wt%. The Zn contents of the films made from the 5:5 and 3:7 ratio targets were 2.07 and 5.01 wt%, respectively. The water vapor transmission rate (WVTR) was determined to be $38^{\circ}C$, RH 90-100%. The WVTR of the Mg-Zn-F film that was deposited with a 4:6 ratio target nearly reached the limit of the equipment, $1\times10^{-3}\;gm^2{\cdot}day$. As the Zn portion increased, the packing density also increased, and it was found that the passivation films effectively prevented the permeation by either oxygen or water vapor. To measure the characteristics of gas barrier, the film was applied to the emitting device to evaluate their lifetime. The lifetime of the applied device with passivation was increased to 25 times that of the PLED device, which was non-passivated.

• 전자공학회논문지
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• 제52권3호
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• pp.213-220
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• 2015

저렴한 다수의 센서들로 구성되는 WSN(Wireless Sensor Network)은 운용 특성상 한 번 배치되면 전원의 교체가 불가능하기에 효율적인 에너지 관리는 중요한 문제이다. 에너지 효율성을 위한 방법 중 네트워크를 몇 개의 클러스터로 나누고 모든 센서들을 클러스터 헤드와 멤버 노드로 구분하는 클러스터링은 에너지 효율적인 WSN을 위한 매우 좋은 라우팅 기법이다. 최초의 클러스터 기반 라우팅 프로토콜인 LEACH는 정해진 확률에 따라 랜덤하게 클러스터 헤드를 선출한다. 하지만 선출된 헤드의 네트워크 내 분포가 적절하지 못 한 경우 클러스터 헤드들의 균일한 에너지 소비를 보장할 수 없고 이로 인해 시간에 따른 생존 노드 수 성능이 많이 감소할 수 있다. 이러한 점에 착안하여 논 본문에서는 클러스터 헤드 선택 시 모든 노드의 잔존 에너지를 비교한 뒤 최대 잔존 에너지를 갖는 노드를 헤드로 선택하는 방법을 제안한다. 노드 간 잔존 에너지 차이를 감소시켜 헤드였던 노드가 더욱 오랫동안 멤버 노드로서 역할을 할 수 있고 이로 인해 더욱 향상된 네트워크 생존 기간과 더 많은 데이터가 기지국으로 도착함을 확인할 수 있었다.

• 한국화재소방학회논문지
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• 제33권6호
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• pp.20-27
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• 2019

본 연구는 화재 시 열출력 급상승 구간에 대한 정확한 열방출율을 예측하기 위한 새로운 함수를 개발하여 제안하는 것을 목적으로 하였다. 현재 화재공학에서 사용되고 있는 'αt²' 곡선은 화재시스템 공학 관점에서 비효율적이며 실효성 저하를 초래하므로 열방출율의 예측오차를 최소화시킬 필요가 있다. 'αt²'과 비교하여 보다 논리적인 배경과 형태적으로 유사성을 가진 로지스틱 함수 이론을 기반으로 화재 급성장 구간은 물론 화재 초기 단계까지 적용 가능한 새로운 예측 함수를 개발하였다. 개발된 함수는 더 넓은 화재성장 구간에서 정확도 높은 예측결과를 갖는 것으로 본 연구에서 증명되었다. 이 연구결과는 향후 화재성장패턴 연구의 개발과 함께 화재공학의 발전을 위해 적용될 것이다.