• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.5
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• pp.10-15
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• 2012

In this work, we proposed the asymmetric MQW structure with gradually increased or decreased well thickness from n-layers to p-layers in order to improve the performance of DUV-LEDs. We report the simulation results of electrical/optical characteristics by using the SimuLED program. From the simulation results, we found that B structure with thickness of the wells gradually increased from the n-side to the p-side has the same forward voltage(Vf) as standard structure, but the light output power (Pout) was improved by a factor of 1.17 at 20mA compared with those of the standard structure.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.99-104
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• 1990

The hetero-epitaxial growth of AmB v type onto-electronic material is attempted by means of the laser-induced chemical vapour deposition technique. The bimolecular gas phase reaction of trimethylgallium with ammonia on (001) alumina substrate for the epitaxy of gallium nitride is chosen as a model system. In this study, ArF exciter laser (193nm) is employed as a photon source. Marked difference is found in nucleation and in subsequent crystal incorporation between the doposits formed with and without the laser-irradiation. The surface coverage with isomorphically grown drystallites is pronounced upon "volume-excited" irradiation in comparison with the conventional thermal process. As to the crystal structure of the grown layers, the laser-induced deposits of GaN may be represented by either of the following two models: (001) plane of sapphire //y (001) plane of wurtzite-type GaN, OR (001) plane of sapphire//(001) plane of wurtzite-type-GaN (111) plane of twinned zinc blende-type GaN.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.6
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• pp.812-819
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• 2012

Interference and jamming are becoming increasing concern to a radar system nowdays. AESA(Active Electronically Steered Array) antennas and adaptive beamforming(ABF), in which antenna beam patterns can be modified to reject the interference, offer a potential solution to overcome the problems encountered. In this paper, we've developed a planar active phased array radar system, in which ABF, target detection and tracking algorithm operate in real-time. For the high output power and the low noise figure of the antenna, we've designed the S-band TRMs based on GaN HEMT. For real-time processing, we've used wavelenth division multiplexing technique on fiber optic communication which enables rapid data communication between the antenna and the signal processor. Also, we've implemented the HW and SW architecture of Real-time Signal Processor(RSP) for adaptive beamforming that uses SMI(Sample Matrix Inversion) technique based on MVDR(Minimum Variance Distortionless Response). The performance of this radar system has been verified by near-field and far-field tests.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.11
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• pp.857-867
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• 2018

Active array radar is evolving into digital active array radar. Digital active array radar has many advantages for making several simultaneous radar beams from the digital receive data of each element. A digital-type transceiver(TR) module is suitable for this goal in radar. In this work, the design results of an L-band digital TR module are presented to verify the possibility of fabrication for a digital active array antenna. This L-band digital TR module consists of a gallium-nitride-type HPA to achieve a more than 350-W peak output power and one-chip transceivers that include a digital waveform generator and analog digital converter. The receiving gain was 47 dB, the noise figure was less than 2 dB, and the final output type of the four channel receiving paths was one optic signal.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• Journal of IKEEE
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• v.26 no.4
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• pp.537-544
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• 2022

This paper analyzes the occurrence and cause of bond wires fusing used in the manufacture of pulsed high power amplifiers. Recently GaN HEMT has been spotlight in the fields of electronic warfare, radar, base station and satellite communication. In order to produce the maximum output power, which is the main performance of the high-power amplifier, optimal impedance matching is required. And the material, diameter and number of bond wires must be determined in consideration of not only the rated current but also the heat generated by the transient current. In particular, it was confirmed that compound semiconductor with a wide energy band gap such as GaN trigger fusing of the bond wire due to an increase in thermal resistance when the design efficiency is low or the heat dissipation is insufficient. This data has been simulated for exothermic conditions, and it is expected to be used as a reference for applications using GaN devices as verified through IR microscope.

• Journal of IKEEE
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• v.26 no.4
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• pp.553-559
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• 2022

In this paper, RC snubber circuit design technology for oscillation suppression in half-bridge configuration of cascode gallium nitride (GaN) field effect transistors (FETs) is analyzed. A typical wide band-gap (WBG) device, cascode GaN FET, has excellent high-speed switching characteristics. However, due to such high-speed switching characteristics, a false turn-off problem is caused, and an RC snubber circuit is essential to suppress this. In this paper, the commonly used experimental-based RC snubber design technique and the RC snubber design technique using the root locus method are compared and analyzed. In the general method, continuous circuit changes are required until the oscillation suppression performance requirement is met based on experimental experience . However, in root locus method, the initial value can be set based on the non-oscillation R-C map. To compare the performance of the two aforementioned design methods, a simulation experiment and a switching experiment using an actual double pulse circuit are performed.