• 제목/요약/키워드: Gain threshold

검색결과 186건 처리시간 0.031초

주입력신호의 LPC 필터 이득을 이용한 반향제거기의 수렴전 동시통화검출 성능 개선 (Performance Improvement of Double Talk Detection before Convergence of the Echo Canceller by Using Linear Predictive Coding Filter Gain of the Primary Input Signal)

  • 유재하
    • 한국지능시스템학회논문지
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    • 제24권6호
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    • pp.628-633
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    • 2014
  • 본 논문에서는 반향제거기가 수렴하기 전에 동작할 수 있는 기존 동시통화검출법의 성능을 개선하기 위한 방법을 제안하였다. 제안된 방법은 LPC 필터 계수를 주입력신호로부터 추정하게 된다. 동시통화검출을 위한 문턱치는 주입력신호의 크기별로 기대되는 LPC 필터 이득치를 사용하여 가변적으로 설정하게 된다. 제안한 방법은 기존의 방법이 갖고 있는 단일통화를 동시통화로 잘못 판단하는 오검출률을 개선할 수 있을 뿐만 아니라 동시통화 검출 지연 시간도 단축시킬 수 있다. 장시간의 음성신호를 사용한 모의실험을 수행하였다. 제안한 방법이 기존 방법의 오검출률을 감소시키고 동시통화 검출 지연시간을 단축시킴을 확인할 수 있었다.

응력완화 1.3$\mu$m GaInAsP/InP uncooled-LD의 다중양자우물층과 SCH층 구조에 따른 동작 특성 (The operating characteristics of strain-compensated 1.3$\mu$m GaInAsP/InP uncooled-LD with the structure of multiple quantum well and separate confinement heterostructure layers)

  • 조호성;박경현;이정기;장동훈;김정수;박기성;박철순;김홍만;편광의
    • 전자공학회논문지A
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    • 제33A권7호
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    • pp.185-197
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    • 1996
  • We have adopted the strain compensated PBH(planar buried heterostructure) - LD in which the MQW active layer consisted of 1.4% compressively strained GainAsP (E$_{g}$ = 0.905eV) wells and 0.7% tensile strained GaInAsP(E$_{g}$ = 1.107eV) barriers grown by metal organic vapor phase epitaxy (MOVPE). We hav einvestigated effects of number of wells and the structure of the separate confinement heterostructure (SCH) layer in the strain-compensated MQW-PBH-LD. The threshold current, the external quantum efficiency, the transparency current density J$_{o}$, and the gain constant .beta. have been evaluated for uncoated MQW-PBH-LD. As the number of wells increases, the internal quantum efficiency and the transparency current density decreases, whereas the gain contant increases. The small width of the SCH layer shows the large internal quantum efficiency. The small internal loss and the large gain constant have been obtained by inserting the large bandgap SCH layer.

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1.55 $\mu\textrm{m}$ DFB 레이저의 특성에 미치는 Grating구조와 Mirror 위치의 영향 (Effect of Grating Structures and Mirror Positions on Characteristics of 1.55$\mu\textrm{m}$ DFB Lasers)

  • Kwon, Kee-Young
    • 전자공학회논문지A
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    • 제31A권9호
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    • pp.128-138
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    • 1994
  • In 1.55.mu.m DFB lasers with two non-AR mirrors, I have analyzed the effect of the sturctures of indes and/or gain gratings and mirror positions on the threshold gains, the lasing frequencies, and the beam profiles in longitudinal direction of lasers. I have obtained the optimum condition of static characteristics that ${\Delta}{\Omega}$(the phase difference betweeen index grating and gain grating is 3${\pi}$/4, $({\kappa}L)_{i}$=4~6 in case of $({\kappa}L)_{i}$=0.9 and $({\kappa}L)_{i}$=3~5 in case of $({\kappa}L)_{i}$=0.7. The modal selectivity and intensity uniformity of this optimum condition are 2~2.5 times better than those of the gain-coupled DFB lasers ${\Delta}{\Omega}$=0). The gain-coupled DFB lasers${\Delta}{\Omega}$=0) have 10$^{10) times better modal selectivity and intensity uniformity than the loss-coupled DFB lasers(TEX>${\Delta}{\Omega}$=${\pi}$).

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공간 JND의 가시성 기반 자동 게인옵셋 (Auto Gain/offset Based on Visibility of Spatial JND)

  • 김미혜;장익훈;김남철
    • 대한전자공학회논문지SP
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    • 제46권4호
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    • pp.16-22
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    • 2009
  • 본 논문에서는 HVS의 가시성과 영상의 히스토그램 특성을 동시에 고려하는 자동 게인옵셋법을 제안한다. 제안한 방법에서는 대비 신장된 영상의 평균 가시성이 최대가 되도록 클리핑의 상하한 역치를 정하고 이들로부터 유도된 게인 및 옵셋으로 영상의 대비를 신장한다. 가시성 함수는 불균일한 밝기의 주변화소들로부터 중심화소의 밝기 변화를 인간 시각이 인지하는 데 필요한 최소 변화량인 공간 JND를 사용하여 정의한다. 실험결과에서 제안한 방법에 의하여 대비 신장된 영상을 기존의 방법들의 결과 영상에 비하여 전역 대비와 국부 대비가 좋게 개선됨을 보인다.

Rail-to-rail 출력을 갖는 1[V] CMOS Operational Amplifiler 설계 및 IC 화에 관한 연구 (A Study on The IC Design of 1[V] CMOS Operational Amplifier with Rail-to-rail Output Ranges)

  • 전동환;손상희
    • 대한전기학회논문지:전력기술부문A
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    • 제48권4호
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    • pp.461-466
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    • 1999
  • A CMOS op amp with rail-to-rail input and output ranges is designed in a one-volt supply. The output stage of the op amp is used in a common source amplifier that operates in sub-threshold region to design a low voltage op amp with rail-to-tail output range. To drive heavy resistor and capacitor loads with rail-to-rail output ranges, a common source amplifier which has a low output resistance is utilized. A bulk-driven differential pair and a bulk-driven folded cascode amplifier are used in the designed op amp to increase input range and achieve 1 V operation. Post layout simulation results show that low frequency gain is about 58 ㏈ and gain bandwidth I MHz. The designed op amp has been fabricated in a 0.8${\mu}{\textrm}{m}$ standard CMOS process. The measured results show that this op amp provides rail-to-rail output range, 56㏈ dc gain with 1 MΩ load and has 0.4 MHz gain-bandwidth with 130 ㎊ and 1 kΩ loads.

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감음성(感音性) 난청인의 언어청력 향상에 관한 연구 (An Improvement of Speech Hearing Ability for sensorineural impaired listners)

  • 이상민;우효창;김동욱;송철규;이영묵;김원기
    • 대한의용생체공학회:학술대회논문집
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    • 대한의용생체공학회 1996년도 춘계학술대회
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    • pp.240-242
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    • 1996
  • In this paper, we proposed a method of a hearing aid suitable for the sensorineural hearing impaired. Generally as the sensorineural hearing impaired have narrow audible ranges between threshold and discomfortable level, the speech spectrum may easily go beyond their audible range. Therefore speech spectrum must be optimally amplified and compressed into the impaired's audible range. The level and frequency of input speech signal are varied continuously. So we have to make compensation input signal for frequency-gain loss of the impaired, specially in the frequency band which includes much information. The input sigaal is divided into short time block and spectrum within the block is calculated. The frequency-gain characteristic is determined using the calculated spectrum. The number of frequency band and the target gain which will be added input signal are estimated. The input signal within the block is processed by a single digital filter with the calculated frequency-gain characteristics. From the results of monosyllabic speech tests to evaluate the performance of the proposed algorithm, the scores of test were improved.

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Modeling the Relationship between Expected Gain and Expected Value

  • Won, Eugene J.S.
    • Asia Marketing Journal
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    • 제18권3호
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    • pp.47-63
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    • 2016
  • Rational choice theory holds that the alternative with largest expected utility in the choice set should always be chosen. However, it is often observed that an alternative with the largest expected utility is not always chosen while the choice task itself being avoided. Such a choice phenomenon cannot be explained by the traditional expected utility maximization principle. The current study posits shows that such a phenomenon can be attributed to the gap between the expected perceived gain (or loss) and the expected perceived value. This study mathematically analyses the relationship between the expectation of an alternative's gains or losses over the reference point and its expected value, when the perceived gains or losses follow continuous probability distributions. The proposed expected value (EV) function can explain the effects of loss aversion and uncertainty on the evaluation of an alternative based on the prospect theory value function. The proposed function reveals why the expected gain of an alternative should exceed some positive threshold in order for the alternative to be chosen. The model also explains why none of the two equally or similarly attractive options is chosen when they are presented together, but either of them is chosen when presented alone. The EV function and EG-EV curve can extract and visualize the core tenets of the prospect theory more clearly than the value function itself.

전달 행렬 방법을 이용한 850 nm수직 공진기 레이저 구조의 최적설계 (Design of 850 nm Vertical-Cavity Surface-Emitting Lasers by Using a Transfer Matrix Method)

  • 김태용;김상배
    • 대한전자공학회논문지SD
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    • 제41권1호
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    • pp.35-46
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    • 2004
  • Vertical-Cavity Surface-Emitting Laser(VCSEL)는 짧은 공진기(cavity)와 여러 층의 distributed Bragg reflector(DBR)층을 거울로 사용하기 때문에, edge-emitting lasers(EELs)와는 달리, 광출력 및 변환효율 등의 예측이 쉽지 않다. 그 주된 원인은 VCSEL에서는 Fabry-Perot 레이저와는 달리, 각각의 DBR 거울 층들이 손실을 가지고 있기 때문으로 이에 따라 상/하향광출력 비나 변환효율을 계산해 내는 데에 어려움이 있다. 그러나 전달 행렬 방법(transfer matrix method, TMM)을 이용하면, VCSEL과 같은 여러 층을 갖는 구조에서의 성능 지수를 정확히 계산할 수 있다. 이 논문에서는 전달 행렬 방법을 이용하여 VCSEL의 구조 변화에 따른 문턱이득, 문턱전류 밀도 및 변환효율을 구하였으며 문턱전류 및 변환효율 모두를 고려한 VCSEL의 최적 구조 설계 기법을 제시하였다.

Efficient Channel State Feedback Scheme for Opportunistic Scheduling in OFDMA Systems by Scheduling Probability Prediction

  • Ko, Soomin;Lee, Jungsu;Lee, Byeong Gi;Park, Daeyoung
    • Journal of Communications and Networks
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    • 제15권6호
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    • pp.589-600
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    • 2013
  • In this paper, we propose a new feedback scheme called mode selection-based feedback by scheduling probability prediction (SPP-MF) for channel state feedback in OFDMA downlink system. We design the scheme such that it determines the more desirable feedback mode among selective feedback by scheduling probability prediction (SPP-SF) mode and bitmap feedback by scheduling probability prediction (SPP-BF) mode, by calculating and comparing the throughputs of the two modes. In both feedback modes, each user first calculates the scheduling probability of each subchannel (i.e., the probability that a user wins the scheduling competition for a subchannel) and then forms a feedback message based on the scheduling probability. Specifically, in the SPP-SF mode, each user reports the modulation and coding scheme (MCS) levels and indices of its best S subchannels in terms of the scheduling probability. In the SPP-BF mode, each user determines its scheduling probability threshold. Then, it forms a bitmap for the subchannels according to the scheduling probability threshold and sends the bitmap along with the threshold. Numerical results reveal that the proposed SPP-MF scheme achieves significant performance gain over the existing feedback schemes.

게이트바이어스에서 감마방사선의 IGBT 전기적특성 (Electrical Characteristics of IGBT for Gate Bias under ${\gamma}$ Irradiation)

  • 노영환;이상용;김종대
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 학술대회 논문집 정보 및 제어부문
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    • pp.165-168
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    • 2008
  • The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.

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